LRC L2SC4226T1

LESHAN RADIO COMPANY, LTD.
L2SC4226T1
3
1
2
SC-70/SOT-323
DESCRIPTION
The L2SC4226T1 is a low supply voltage transistor designed for VHF, UHF low
noise amplifier.
It is suitable for a high density surface mount assembly since the transistor
has been applied small mini mold package.
FEATURES
• Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High Gain
2
|S21e| = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Small Mini Mold Package
EIAJ: SC-70
Driver Marking
L2SC4226T1=R2
The information in this document is subject to change without notice.
L2SC4226T1-1/5
LESHAN RADIO COMPANY, LTD.
L2SC4226T1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
ICBO
1.0
µA
VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
µA
VEB = 1 V, I C = 0
DC Current Gain
hFE
40
110
Gain Bandwidth Product
fT
3.0
4.5
Feed back Capacitance
Cre
Insertion Power Gain
|S21e|2
Noise Figure
NF
0.7
7
GHz
1.5
9
1.2
VCE = 3 V, IC = 7 mA*1
250
2.5
*1
Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
VCE = 3 V, IC = 7 mA
pF
VCE = 3 V, IE = 0, f = 1 MHz*2
dB
VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
VCE = 3 V, IC = 7 mA, f = 1 GHz
L2SC4226T1-2/5
LESHAN RADIO COMPANY, LTD.
L2SC4226T1
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
IC – Collector Current – mA
100
0
50
100
150
0
0.5
1.0
VBE – Base to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
IB =160 µ A
VCE = 3 V
140 µ A
20
120 µ A
100 µ A
15
80 µ A
60 µ A
10
40 µ A
5
5
50
20
10
0.5
10
1
5
10
50
VCE – Collector to Emitter Voltage – V
IC – Collector Current – mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
20
15
|S21e|2 – Insertion Power Gain – dB
VCE = 3 V
f = 1.0 GHz
10
5
2
1
0.5
100
20 µ A
0
fT – Gain Bandwidth Product – GHz
10
TA – Ambient Temperature – °C
25
IC – Collector Current – mA
VCE = 3 V
Free Air
200
hFE – DC Current Gain
PT – Total Power Dissipation – mW
20
1
5
10
IC – Collector Current – mA
50
VCE = 3 V
f = 1.0 GHz
10
5
0
0.5
1
5
10
50
100
IC – Collector Current – mA
L2SC4226T1-3/5
LESHAN RADIO COMPANY, LTD.
L2SC4226T1
NOISE FIGURE vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs. FREQUENCY
VCE = 3 V
f = 1 GHz
4
2
0
0.5
1
5
10
50
100
24
|S21e|2 – Insertion Power Gain – dB
NF – Noise Figure – dB
6
VCE = 3 V
IC = 7 mA
20
16
12
8
4
0
0.1
0.2
0.5
1.0
2.0
5.0
f – Frequency – GHz
IC – Collector Current – mA
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Cre – Feed-back Capacitance – pF
5.0
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
VCB – Collector to Base Voltage – V
L2SC4226T1-4/5
LESHAN RADIO COMPANY, LTD.
L2SC4226T1
SC-70 / SOT-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
DIM
L
A
B
C
D
G
H
J
K
L
N
S
3
B
S
1
2
D
G
C
0.05 (0.002)
J
N
0.071
0.087
1.80
2.20
0.045
0.032
0.012
0.053
0.040
0.016
1.15
0.80
0.30
1.35
1.00
0.40
0.047
0.000
0.055
0.004
1.20
0.00
1.40
0.10
0.004
0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.079
0.700 REF
0.095
2.00
2.40
PIN 1. BASE
K
H
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
2. EMITTER
3. COLLECTOR
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
L2SC4226T1-5/5