ETC LVS2201N

April 2005
Preliminary
®
www.lovoltech.com
LVS2201N Dual N-Channel PowerJFET®
Product Summary
Features
Typical
Max
15.5
24
18
VDS
RDS(ON) @ 0 VGS
• Device is fully on @ VGS = 0V.
• Bidirectional blocking when off (no body diode)
V
mΩ
Applications
Pinouts
• Notebook battery switch:
Each JFET replaces 2 P-Channel series MOSFETs
D2
D2
D1
S2
D1
G2
S1
G1
SO-8
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
Parameter
VDSS
VGS
VDG
ID
Drain to Source voltage
Gate to Source voltage
Drain to Gate voltage
Drain Current (note 1)
TJ
Junction Temperature
TSTG
Storage Temperature
Lead Soldering Temperature
10 seconds, 1.6mm from case
Power Dissipation (single operation)
PD
Conditions
Rating
Units
24
–12
–28
7.5
20
V
V
V
A
A
–55 to 150
°C
–65 to 150
260
°C
°C
TA = 25°C, note 1
1.6
W
TA = 25°C, note 2
1.2
W
Rating
Units
78
105
40
°C/W
°C/W
°C/W
Continuous, TC = 25°C
Pulsed, 300µS
Thermal Resistance
Symbol
Resistance from:
Conditions
RθJA
Junction to Ambient
note 1
note 2
RθJC
Junction to Case
Note 1. Mounted on 1 in.2, 2 oz copper on FR-4
Note 1. Mounted on 0.05 in.2, 0.5 oz. copper on FR-4
©2005 Lovoltech Inc.
REV. 0.8.0 04/14/05
LVS2201N
®
Preliminary
Electrical Specifications
Symbol
@TJ = 25°C (unless otherwise specified)
Parameter
Conditions
BVDSX
BVGDO
BVGSO
RDS(ON)
Breakdown Voltage Drain to Source
Breakdown Voltage Gate to Drain
Breakdown Voltage Gate to Source
Drain to Source On Resistance
VGS(OFF)
Gate Threshold Voltage
ID = 0.5 mA, VGS= –4 V
IG = –50µA
IG = –50µA
VGS = 0V, ID = –4A
VGS = 0V, ID = 5A
VDS = 16 V, ID = 250µA
Min
Typ
Max
Units
24
28
–32
–14
15.5
18
–2.5
–28
–12
18
22
V
V
V
mΩ
mΩ
V
Static
Dynamic
QG
QGD
QGS
RG
TD(ON)
TD(OFF)
TR
TF
CISS
COSS
CGS
CGD
CDS
Total Gate Charge
Gate to Drain charge
Gate to Source Charge
Gate resistance
Turn-on Delay
Turn-off Delay
Rise Time
Fall Time
Input Capacitance
Output Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
Drain-Source Capacitance
∆VGS = 5V, VDS = 15V
∆VDS = 12V
6.9
4.5
2.4
3
4
9
2
7
640
260
437
202
11
ID=15A
Circuit of Figure 1
nC
nC
nC
Ω
nS
pF
pF
pF
pF
pF
RL
15V
5V
D.U.T.
2.2Ω
ID
D
G
S
Figure 1. Switching test circuit.
www.lovoltech.com
2
LVS2201N
®
Preliminary
Typical Characteristics
@TJ = 25°C (unless otherwise specified)
19
1.3
Normalized RDS(ON)
RDS (ON)
18
17
1.2
1.1
16
15
1
-7
-5
-3
-1
1
3
5
7
ID (A)
0
20
40
60
80
100
120
140
160
Die temperature (TJ) °C
Figure 2. RDS(ON) vs. Drain Current @VGS = 0V
Figure 3. Normalized RDS(ON) vs. junction temperature
@ ID = –5A
4.5
4.0
Normalized RDS(ON)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
VGS
Figure 4. Normalized RDS(ON) vs. @ ID = –5A
www.lovoltech.com
3
LVS2201N
®
Preliminary
Dimensional Outline Drawing
8-lead narrow SOIC
SO-8
Millimeters
Min
Max
1.35
1.75
0.10
0.20
0.35
0.51
0.19
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.50
0.93
0°
8°
Dim
A
A1
B
C
D
E
e
H
h
L
q
8
7
6
Inches
Min
Max
0.0530
0.0690
0.0040
0.0080
0.0140
0.0200
0.0075
0.0100
0.1890
0.1960
0.1500
0.1570
0.050 BSC
0.2280
0.2440
0.0100
0.0200
0.0200
0.0370
0°
8°
5
E
1
2
3
Recommended minimum pad layout
dimensions in inches (mm)
H
4
h x 45°
C
0.25 mm (Gage Plane)
L
q
0.101 mm
0.004"
Conforms to JEDEC part number MS-012
www.lovoltech.com
4
LVS2201N
®
Preliminary
Ordering Information
Part Number
LVS2201N
Package
Packing
SO-8
13” Tape and Reel, 2500 units / reel
LIFE SUPPORT POLICY
LOVOLTECH’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE
PRESIDENT OF LOVOLTECH SEMICONDUCTOR CORPORATION. As used herein:
1.
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance
instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the
user.
2.
A critical component in any component of a life support, device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
www.lovoltech.com
5