ACE ACE2301

ACE2301
Technology
P-Channel Enhancement Mode MOSFET
Description
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
•
•
•
•
•
VDS=-20V
RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ
RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1)
Maximum Power Dissipation
Symbol
VDS
VGS
ID
IDM
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Junction to Ambient Thermal Resistance (PCB mounted)2)
PD
TJ
TSTG
RθJA
Max
Unit
-20
V
±12
V
-2.2
A
-8
A
1.25
W
0.8
-55 to 150 OC
-55 to 150 OC
O
140
C/W
Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature.
2
2.1-in 2oz Cu PCB board.
3.Guaranteed by design; not subject to production testing.
VER 1.2
1
ACE2301
Technology
P-Channel Enhancement Mode MOSFET
Packaging Type
SOT-23-3
3
Pin Symbol Description
1
G
Gate
2
S
Source
3
D
Drain
1
2
Ordering information
Selection Guide
ACE2301 XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.2
2
ACE2301
Technology
P-Channel Enhancement Mode MOSFET
Electrical Characteristics
Parameter
Symbol
Conditions
Min.
-20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-2.8A
70.0
100.0
Drain-Source On-State Resistance
RDS(ON)
VGS=-2.5V, ID=-2.0A
85.0
150.0
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage
IGSS
Forward Trans conductance
Gfs
-0.9
V
VDS=-9.6V, VGS=0V
-1
uA
VGS=±8V, VDS=0V
±100
nA
VDS=-5V, ID=-2.8A
-0.4
mΩ
6.5
S
Dynamic3)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Td(on)
Turn-On Rise Time
Tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-6V, ID=-2.8A
VGS=-4.5V
VDD=-6V,RL=6Ω
ID=-1A, VGEN=-4.5V
RG=6Ω
VDS=-6V, VGS=0V
F=1.0MHz
5.8
10
nC
0.85
1.7
13
25
36
60
42
70
34
60
ns
415
pF
223
87
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
IS=-1.6A,VGS=0V
-1.6
A
-1.2
V
Note: Pulse test pulse width<=300us, duty cycle<=2%.
VER 1.2
3
ACE2301
Technology
P-Channel Enhancement Mode MOSFET
Packing Information
SOT-23-3
VER 1.2
4
ACE2301
Technology
P-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
5