MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81709FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT .................................................... ±2A ¡HALF BRIDGE DRIVER ¡UNDERVOLTAGE LOCKOUT ¡SOP-16 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, ACservomotor and general purpose. LO 1 16 NC GND 2 15 GND VCC 3 14 LIN NC 4 13 NC NC 5 12 HIN VS 6 11 NC VB 7 10 NC HO 8 9 NC NC:NO CONNECTION Outline:16P2N BLOCK DIAGRAM VREG HIN 12 VREG/VCC LEVEL SHIFT HV LEVEL SHIFT 14 15 VREG/VCC LEVEL SHIFT VB 8 HO 6 VS 3 VCC 1 LO 2 GND RQ INTER LOCK R S PULSE GEN UV DETECT FILTER LIN 7 UV DETECT FILTER DELAY Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB VS VBS VHO VCC VLO VIN dVS/dt Pd Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Test conditions Ratings –0.5 ~ 624 Unit V V V VB–24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 VBS = VB–VS V V V V –0.5 ~ 24 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 ±50 0.90 HIN, LIN Ta = 25°C, On Board V/ns W mW/°C 9.0 50 –20 ~ 125 –20 ~ 100 Ta > 25°C, On Board °C/W °C °C –40 ~ 125 °C RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VHO Parameter Test conditions High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage VCC High Side Output Voltage Low Side Fixed Supply Voltage VLO VIN Low Side Output Voltage Logic Input Voltage VB > 10V VBS = VB–VS Min. VS+10 –5 10 VS HIN, LIN Limits Typ. — — — Max. VS+20 500 Unit V V 20 VB V V 10 0 — — — 20 VCC V V 0 — VCC V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) Package Power Dissipation Pd (W) 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 Temperature Ta (°C) Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol Parameter Test conditions Limits Typ.* — Max. 1.0 0.2 0.5 mA Unit IFS Floating Supply Leakage Current VB = VS = 600V Min. — IBS VBS Standby Current HIN = LIN = 0V — ICC VCC Standby Current HIN = LIN = 0V 0.2 0.5 1.0 mA VOH High Level Output Voltage IO = 0A, LO, HO 13.8 14.4 — V VOL Low Level Output Voltage IO = 0A, LO, HO — — 0.1 V VIH High Level Input Threshold Voltage HIN, LIN 2.1 3.0 4.0 V VIL Low Level Input Threshold Voltage HIN, LIN 0.6 1.5 2.0 V IIH High Level Input Bias Current VIN = 5V — 25 75 µA IIL Low Level Input Bias Current VIN = 0V — — 1.0 µA VBSuvr VBS Supply UV Reset Voltage 8.0 8.9 9.8 V VBSuvh VBS Supply UV Hysteresis Voltage 0.3 0.7 — V tVBSuv VBS Supply UV Filter Time — 7.5 — µs VCCuvr VCC Supply UV Reset Voltage 8.0 8.9 9.8 V VCCuvh VCC Supply UV Hysteresis Voltage 0.3 0.7 — V tVCCuv VCC Supply UV Filter Time — 7.5 — µs IOH Output High Level Short Circuit Pulsed Current VO = 0V, VIN = 5V, PW < 10µs — 2.5 — A IOL Output Low Level Short Circuit Pulsed Current VO = 15V, VIN = 0V, PW < 10µs — 2.5 — A ROH Output High Level On Resistance IO = –200mA, ROH = (VOH–VO)/IO — 10 13 Ω ROL Output Low Level On Resistance IO = 200mA, ROL = VO/IO — 2.5 3.0 Ω tdLH(HO) High Side Turn-On Propagation Delay CL = 1000pF between HO-VS 100 135 170 ns tdHL(HO) High Side Turn-Off Propagation Delay CL = 1000pF between HO-VS 100 135 170 ns trH High Side Turn-On Rise Time CL = 1000pF between HO-VS — 20 35 ns tfH High Side Turn-Off Fall Time CL = 1000pF between HO-VS — 15 25 ns tdLH(LO) Low Side Turn-On Propagation Delay CL = 1000pF between LO-GND 100 135 170 ns tdHL(LO) Low Side Turn-Off Propagation Delay CL = 1000pF between LO-GND 100 135 170 ns trL Low Side Turn-On Rise Time CL = 1000pF between LO-GND — 20 35 ns tfL Low Side Turn-Off Fall Time CL = 1000pF between LO-GND — 15 25 ns ∆tdLH Delay Matching, High Side and Low Side Turn-On |tdLH(HO)–tdLH(LO)| — — 30 ns ∆tdHL Delay Matching, High Side and Low Side Turn-Off |tdHL(HO)–tdHL(LO)| — — 30 ns µA * Typ. is not specified. Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER FUNCTION TABLE (X: H or L) HIN LIN VBS UV VCC UV HO LO L L H H X X L H L H L H L H X X H H H H L L H H H H H H H H L L L L H L L L L L L H L L L H L L Behavioral state LO = HO = Low LO = High HO = High LO = HO = Low HO = Low, VBS UV tripped LO = High, VBS UV tripped LO = Low, VCC UV tripped HO = LO = Low, VCC UV tripped Note : “L” state of VBS UV, VCC UV means that UV trip voltage. In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. TIMING DIAGRAM 1.Input/Output Timing Diagram HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.) In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. HIN LIN HO LO Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER 2.VCC (VBS) Supply Under Voltage Lockout Timing Diagram When VCC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output signal becomes “L”. And then, when VCC Supply Voltage is higher than UV Reset Voltage, output signal LO becomes “H”. VCCuvh VCC VCCuvr VCCuvt tVCCuv LO LIN When VCC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output signal becomes “L”. And then, when VCC Supply Voltage is higher than UV Reset Voltage, input signal (LIN) is L; output signal HO becomes “H”. VBS(H) LIN(L) VCCuvh VCC VCCuvr VCCuvt tVCCuv HO HIN When VBS Supply Voltage keeps lower UV Trip Voltage (VBSuvt = VBSuvr–VBSuvh) for VBS Supply UV Filter Time, output signal becomes “L”. And then, VBS Supply Voltage is higher than UV Reset Voltage, output signal HO keeps “L” until next input signal HIN is “H”. VBSuvh VBS VBSuvr VBSuvt tVBSuv HO HIN Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER 3.Allowable Supply Voltage Transient It is recommended that supplying VCC firstly and supplying VBS secondly. In the case of shutting off supply voltage, shutting off VBS firstly and shutting off VCC secondly. At the time of starting VCC and VBS, power supply should be increased slowly. If it is increased rapidly, output signal (HO or LO) may be “H”. PACKAGE OUTLINE 16P2N-A Plastic 16pin 300mil SOP EIAJ Package Code SOP16-P-300-1.27 JEDEC Code – Weight(g) 0.2 Lead Material Cu Alloy e b2 9 E Recommended Mount Pad Symbol 1 F 8 A D G A2 b e x A1 M y L L1 HE e1 I2 16 A A1 A2 b c D E e HE L L1 z Z1 x y c z Z1 Detail G Detail F b2 e1 I2 Dimension in Millimeters Min Nom Max – – 2.1 0.2 0.1 0 – – 1.8 0.5 0.4 0.35 0.25 0.2 0.18 10.2 10.1 10.0 5.4 5.3 5.2 – 1.27 – 8.1 7.8 7.5 0.8 0.6 0.4 – 1.25 – – – 0.605 – 0.755 – – – 0.25 0.1 – – 0° – 8° – 0.76 – – 7.62 – – 1.27 – Mar. 2006