Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 ■ Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition • Low forward rise voltage VF (VF < 0.45 V) • Allowing high-density mounting 1.25 ± 0.1 3 2 Reverse voltage (DC) Symbol Rating Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Repetitive peak reverse voltage Average forward current*2 Non-repetitive peak forward surge current*1 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Mounted on a alumina printed circuit board + 0.1 0.9 ± 0.1 Parameter 0.15 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package (3-pin) Marking Symbol: M5E Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 20 V 200 µA Forward voltage (DC) VF IF = 700 mA 0.45 V Terminal capacitance Ct VR = 0 V, f = 1 MHz Reverse recovery time trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 100 pF 7 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 1 MA3ZD12 Schottky Barrier Diodes (SBD) IF V F VF Ta IR VR 0.5 10−1 0.4 10−2 Ta = 125°C 10−3 75°C 10−2 75°C 10−3 25°C − 20°C 10−4 IF = 700 mA 0.3 0.2 100 mA 3 mA 10−6 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 0 IR T a 1V 102 10 0 20 40 60 80 100 120 140 Ambient temperature Ta (°C) Terminal capacitance Ct (pF) Reverse current IR (mA) 10 V 103 Ta = 25°C 80 60 40 20 0 5 10 15 20 25 Reverse voltage VR (V) 0 5 10 15 20 25 Reverse voltage VR (V) 100 0 25°C 10−6 120 Ct VR 104 2 80 120 VR = 20 V 1 40 Ambient temperature Ta (°C) 105 10−4 10−5 0.1 10−5 Reverse current IR (A) Ta = 125°C 10−1 Forward voltage VF (V) Forward current IF (A) 1 30 30