MCR72-3, MCR72-6, MCR72-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. http://onsemi.com SCRs 8 AMPERES RMS 100 thru 600 VOLTS Features • Center Gate Geometry for Uniform Current Density • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability G • Small, Rugged Thermowatt Construction for Low Thermal • • A Resistance, High Heat Dissipation and Durability Low Trigger Currents, 200 mA Maximum for Direct Driving from Integrated Circuits Pb−Free Packages are Available* K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 110°C, Sine Wave, 50 Hz to 60 Hz) MCR72−3 MCR72−6 MCR72−8 VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 83°C) IT(RMS) 8.0 A ITSM 100 A I2 t 40 A2s Forward Peak Gate Voltage (t ≤ 10 ms, TC = 83°C) VGM "5.0 V Forward Peak Gate Current (t ≤ 10 ms, TC = 83°C) IGM 1.0 A Forward Peak Gate Power (t ≤ 10 ms, TC = 83°C) PGM 5.0 W PG(AV) 0.75 W Operating Junction Temperature Range TJ −40 to +110 °C 1 Cathode Storage Temperature Range Tstg −40 to +150 °C 2 Anode − 8.0 in. lb. 3 Gate 4 Anode Peak Non-Repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = 110°C) Circuit Fusing Considerations (t = 8.3 ms) Average Gate Power (t = 8.3 ms, TC = 83°C) Mounting Torque Value Unit V 100 400 600 1 2 TO−220AB CASE 221A−07 STYLE 3 3 TO−220AB CASE 221A−09 STYLE 3 1 2 3 PIN ASSIGNMENT Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking MARKING AND ORDERING INFORMATION See detailed marking, ordering, and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 20008 November, 2008 − Rev. 4 1 Publication Order Number: MCR72/D MCR72−3, MCR72−6, MCR72−8 voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 2 MCR72−3, MCR72−6, MCR72−8 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 2.2 °C/W Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 500 mA mA ICCH 4 4 mA mA Peak Forward On-State Voltage (ITM = 16 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%) VTM − 1.7 2.0 V Gate Trigger Current (Continuous dc) (Note 3) (VD = 12 V, RL = 100 W) IGT − 30 200 mA Gate Trigger Voltage (Continuous dc) (Note 3) (VD = 12 V, RL = 100 W) VGT − 0.5 1.5 V Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 W, TJ = 110°C) VGD 0.1 − − V Holding Current (VD = 12 V, Initiating Current = 200 mA, RGK = 1 kW) IH − − 6.0 mA Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 16 A, IG = 2 mA) tgt − 1.0 − ms dv/dt − 10 − V/ms OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 2) (VAK = Rated VDRM or VRRM; RGK = 1 kW) TJ = 25°C TJ = 110°C High Logic Level Supply Current from VCC IDRM, IRRM ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, RGK = 1 kW, TJ = 110°C, Exponential Waveform) 2. Ratings apply for negative gate voltage or RGK = 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 3. RGK current not included in measurement. http://onsemi.com 3 MCR72−3, MCR72−6, MCR72−8 Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) P, AV AVERAGE POWER DISSIPATION (WATTS) Anode − ° T C , MAXIMUM CASE TEMPERATURE (C) 110 100 α α = Conduction Angle α = 30° 90 60° 90° 180° 80 dc 70 0 2.0 4.0 6.0 16 dc 12 α 180° α = Conduction Angle 8.0 90° α = 30° 60° 4.0 0 8.0 0 2.0 4.0 6.0 8.0 IT(AV), AVERAGE ON‐STATE CURRENT (AMP) IT(AV), AVERAGE ON‐STATE CURRENT (AMP) Figure 1. Average Current Derating Figure 2. On−State Power Dissipation VGT, GATE TRIGGER VOLTAGE (VOLTS) NORMALIZED GATE CURRENT 3.0 2.0 VD = 12 Vdc 1.0 0.5 0.3 -40 -20 0 20 40 60 80 90 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 0.7 0.6 VD = 12 Vdc 0.5 0.4 0.3 0.2 0.1 -60 Figure 3. Normalized Gate Current -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Gate Voltage http://onsemi.com 4 120 MCR72−3, MCR72−6, MCR72−8 MARKING DIAGRAMS TO−220AB CASE 221A−07 TO−220AB CASE 221A−09 AY WW MCR72−xG AKA AY WW MCR72−6TG AKA A Y WW MCR72−x G AKA = = = = Assembly Location Year Work Week Device Code x = 3, 6, 8, or 8T = Pb−Free Package = Diode Polarity A Y WW MCR72−6T G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package MCR72−3 TO−220AB MCR72−3G TO−220AB (Pb−Free) MCR72−6 TO−220AB MCR72−6G TO−220AB (Pb−Free) MCR72−6T TO−220AB MCR72−6TG TO−220AB (Pb−Free) MCR72−8 TO−220AB MCR72−8G TO−220AB (Pb−Free) MCR72−8T TO−220AB MCR72−8TG TO−220AB (Pb−Free) http://onsemi.com 5 Shipping 500 Units / Box 50 Units / Rail 500 Units / Box 50 Units / Rail MCR72−3, MCR72−6, MCR72−8 PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE O −T− B F 4 Q SEATING PLANE C T S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 CATHODE ANODE GATE ANODE TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 6 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MCR72−3, MCR72−6, MCR72−8 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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