MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES · · · SOT-523 A Epitaxial Planar Die Construction L Complementary PNP Type Available (MMBT3906FW) Ideal for Medium Power Amplification and Switching COLLECTOR V 3 3 B S Top View G C 1 1 2 BASE H D SOT-523 J K 2 EMITTER MAXIMUM RATINGS Dim Min Max A 1.500 1.700 B 0.750 0.850 C 0.700 0.900 D 0.250 0.350 G 0.900 1.100 H 0.000 0.100 J 0.100 0.200 K 0.220 0.500 L 0.400 0.600 S 1.500 1.700 V 0.200 0.400 All Dimension in mm Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max Unit PD 200 mW 1.6 mW/°C RqJA 600 °C/W PD 300 mW 2.4 mW/°C RqJA 400 °C/W TJ, Tstg – 55 to +150 °C Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient(1) Total Device Dissipation(2) Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient(2) Junction and Storage Temperature DEVICE MARKING MMBT3904FW = 1N, AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 — Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL — 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX — 50 nAdc OFF CHARACTERISTICS 1. FR– 4 = Minimum Pad 2. Alumina = 1.0 1.0 Inch Pad. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 40 70 100 60 30 — — 300 — — — — 0.2 0.3 0.65 — 0.85 0.95 fT 300 — MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 8.0 pF Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 k ohms Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10– 4 Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 — Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mmhos Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) NF — 5.0 dB ((VCC = 3.0 Vdc,, VBE = – 0.5 Vdc,, IC = 10 mAdc, IB1 = 1.0 mAdc) td — 35 tr — 35 ((VCC = 3.0 Vdc,, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts — 200 tf — 50 ON CHARACTERISTICS(3) DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) HFE Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A v 300 ms, Duty Cycle v 2.0%. ns ns Any changing of specification will not be informed individual Page 2 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor +3 V Duty Cycle = 2% 300 ns +10.9 V 10 < t1 < 500 ms 275 t1 Duty Cycle = 2% +3 V +10.9 V 275 10 k 10 k 0 – 0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 – 9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 5000 10 2000 Q, Charge (pC) 5.0 Capacitance (pF) VCC = 40 V IC/IB = 10 3000 7.0 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 Reverse Bias Voltage (V) I C, Collector Current (mA) Figure 3. Capacitance Figure 4. Charge Data 50 70 100 200 Any changing of specification will not be informed individual Page 3 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor 500 500 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 VCC = 40 V IC/IB = 10 300 200 t r , Rise Time (ns) Time (ns) 300 200 40 V 100 70 50 30 20 15 V 10 7 5 10 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 200 1.0 5.0 7.0 10 2.0 3.0 20 30 I C, Collector Current (mA) I C, Collector Current (mA) Figure 5. Turn – On Time Figure 6. Rise Time 500 300 200 7 5 200 500 t′s = ts – 1/8 tf IB1 = IB2 IC/IB = 10 50 70 100 VCC = 40 V IB1 = IB2 300 200 t f , Fall Time (ns) ts′ , Storage Time (ns) IC/IB = 20 100 70 IC/IB = 20 50 IC/IB = 10 30 20 100 70 50 10 10 7 5 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 30 20 1.0 2.0 3.0 5.0 7.0 10 I C, Collector Current (mA) 20 30 50 70 100 200 I C, Collector Current (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) SOURCE RESISTANCE = 200 IC = 1.0 mA NF, Noise Figure (dB) 10 14 W f = 1.0 kHz 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 W NF, Noise Figure (dB) 12 SOURCE RESISTANCE = 1.0 k IC = 50 A m 4 2 0 0.1 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 SOURCE RESISTANCE = 500 IC = 100 A m 0.2 0.4 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 1.0 2.0 W 2 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, Frequency (kHz) R S, Source Resistance (k OHMS) Figure 9. Figure 10. 40 100 Any changing of specification will not be informed individual Page 4 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe , Output Admittance ( m mhos) 100 h fe , Current Gain 200 100 70 50 50 20 10 5 2 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 1 10 0.1 0.2 20 10 10 7.0 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 5.0 10 Figure 12. Output Admittance h re , Voltage Feeback Ratio (X 10 –4) h ie , Input Impedance (k OHMS) Figure 11. Current Gain 0.3 5.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) Figure 14. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 2.0 h FE, DC Current Gain (Normalized) TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 15. DC Current Gain http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 5 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 VCE , Collector Emitter Voltage (V) TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B, Base Current (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25°C VBE(sat) @ IC/IB =10 0.8 V, Voltage (V) +25°C TO +125°C 0.5 VBE @ VCE =1.0 V 0.6 0.4 Coefficient (mV/ °C) 1.0 qVC FOR VCE(sat) 0 – 55°C TO +25°C – 0.5 – 55°C TO +25°C – 1.0 VCE(sat) @ IC/IB =10 +25°C TO +125°C 0 qVB FOR VBE(sat) – 1.5 0.2 1.0 2.0 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 5.0 10 20 50 100 200 – 2.0 0 20 40 60 80 100 120 140 160 I C, Collector Current (mA) I C, Collector Current (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 180 200 Any changing of specification will not be informed individual Page 6 of 6