UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 3 The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 2 1 SOT-23 *Pb-free plating product number: MMBT4401L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT4401-AE3-R MMBT4401L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBT4401L-AE3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 2X www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R206-035,B MMBT4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING* (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA 350 mW Total Device Dissipation PD mW/℃ Derate above 25℃ 2.8 Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (Ta=25℃, unless otherwise specified) CHARACTERISTIC Thermal Resistance, Junction to Ambient SYMBOL θJA RATING 357 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (note) Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cut-off Current ON CHARACTERISTICS (note) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance SWITCHING CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEX IBL MIN IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V 60 40 6 VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE(SAT1) IC=150mA, IB=15mA VCE(SAT2) IC=500mA, IB=50mA VBE(SAT1) IC=150mA, IB=15mA VBE(SAT2) IC=500mA, IB=50mA 20 40 80 100 40 hFE1 hFE2 hFE3 hFE4 hFE5 fT Ccb Ceb hie hre hfe hoe Delay Time tD Rise Time tR Storage Time tS Fall Time TEST CONDITIONS tF VCE=10V, IC=20mA, f=100MHz VCB=5V, IE=0, f=140kHz VBE=0.5V, IC=0, f=140kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCC=30V, VEB=2V IC=150mA IB1=15mA VCC=30V, VEB=2V IC=150mA IB1=15mA VCC=30V, IC=150mA IB1= IB2=15mA 0.75 TYP MAX V V V µA µA 300 0.4 0.75 0.95 1.2 250 1 0.1 40 1 UNIT V V V V MHz pF pF kΩ -4 ×10 6.5 30 15 8 500 30 µmhos 15 ns 20 ns 225 ns 30 ns Note: Pulse test: PulseWidth≤300µs, Duty Cycle≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R206-035,B MMBT4401 NPN SILICON TRANSISTOR TEST CIRCUIT 30V 200Ω 16V 0 1KΩ ≤220ns 500Ω Figure1. Saturated Turn-On Switching Timer -1.5V 6V 1k Note:BVEBO =5V 30V 0 ≤220ns 37Ω 1KΩ 50Ω Figure2. Saturated Turn-Off Switching Timer UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R206-035,B MMBT4401 NPN SILICON TRANSISTOR Typical Pulsed Current Gain vs Collector Current Typical Pulsed Current Gain, hFE 500 VCE =5V 400 125℃ 300 200 25℃ 100 -40℃ 0 0.1 0.3 1 3 10 30 100 300 Collector Current, IC (mA) Collector-Emitter Voltage, VCESAT (V) TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs Collector Current 0.4 β=10 0.3 125℃ 0.2 25℃ 0.1 -40℃ 1 β=10 1 -40℃ 0.8 25℃ 125℃ 0.6 0.4 1 10 100 Collector Current, I C (mA) 100 VCB=40V 10 1 0.1 500 Base-Emitter On Voltage vs Collector Current 1 VCE =5V -40℃ 0.8 25℃ 0.6 125℃ 0.4 0.2 0.1 1 10 Collector Current, I C (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 Capacitance (pF) Collector Current, ICBO (nA) 500 Collector-Cutoff Current vs Ambient Temperature 500 Base-Emitter OnVoltage, VBEON (V) Base-Emitter Voltage, VBESAT (V) Base-Emitter Saturation Voltage vs Collector Current 10 100 Collector Current, IC (mA) f=1MHz 16 Cte 12 8 Cob 4 25 50 75 100 125 150 Ambient Temperature, T A(℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 1 10 Reverse Bias Voltage (V) 100 4 of 6 QW-R206-035,B MMBT4401 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) 400 Turn On and Turn Off Times vs Collector Current 400 IC I B1=I B2= 10 320 I B1=I B2= 320 Time (ns) 240 160 80 240 80 t off Power Dissipation vs Ambient Temperature Char.Relative To Voltage At I C=10mA 8 SOT-23 0.25 25 Char.Relative To Voltage at TA=25℃ VCE =10V I C=10mA f=1kHz 1.6 1.2 hre hie hfe hoe 0.8 0.4 0 0 40 60 80 100 20 Ambient Temperature, TA (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 4 VCE =10V T A=25℃ f=1kHz hoe hre 2 0 75 100 125 150 50 Temperature (℃) Common Emitter Characteristics 2 100 1000 Collector Current, I C (mA) Common Emitter Characteristics 0.5 2.4 0 10 100 1000 Collector Current, IC (mA) 0.75 0 tR tF tD Char.Relative To Voltage at VCE=10V Power Dissipation, PD (W) 1 tS 160 ton 0 10 IC 10 VCC =25V VCC =25V Time (ns) Switching Times vs Collector Current 0 1.3 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0 hfe hie 30 40 50 10 20 Collector Current, IC (mA) 60 Common Emitter Characteristics T A=25℃ I C=10mA f=1kHz hfe hie hre hoe 5 10 15 20 25 30 Collector Voltage, VCE (V) 35 5 of 6 QW-R206-035,B MMBT4401 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R206-035,B