Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products Motorola Preferred Device WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched G and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SO–8 Surface Mount Package — Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for SO–8 Package Provided DEVICE MARKING S3305 SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS RDS(on) = 0.02 OHM D CASE 751–05, Style 13 SO–8 S Source 1 8 Drain Source 2 7 Drain Source 3 6 Drain Gate 4 5 Drain Top View ORDERING INFORMATION Device MMSF3305R2 Reel Size Tape Width Quantity 13″ 12 mm embossed tape 4000 units Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. TMOS Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MMSF3305 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Negative sign for P–Channel devices omitted for clarity Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous 1 inch SQ. FR–4 or G–10 PCB 10 seconds Minimum FR–4 or G–10 PCB 10 seconds Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 9.1 Apk, L = TBD mH, RG = 25 W) Symbol Max Unit VDSS VDGR 30 V 20 V VGS RTHJA PD ± 20 V 50 2.5 20 9.1 7.3 50 °C/W Watts mW/°C A A A 80 1.56 12.5 7.2 5.8 40 °C/W Watts mW/°C A A A – 55 to 150 °C ID ID IDM RTHJA PD ID ID IDM TJ, Tstg EAS mJ TBD (1) Repetitive rating; pulse width limited by maximum junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MMSF3305 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 30 — — — — — — — — — 1.0 5.0 — — 100 0.7 — — — 1.4 — — — — — 20 30 40 10 — — — — gFS — — — Mhos Ciss — — TBD pF Coss — — TBD Crss — — TBD td(on) — — TBD tr — — TBD td(off) — — TBD OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) (1) (3) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 15 Vdc, VGS = 0 Vdc, TJ = 70°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) (1) (3) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 9.1 Adc) (VGS = 4.5 Vdc, ID = 7.3 Adc) (1) (3) On–State Drain Current (VDS ≤ 5.0 V, VGS = 10 V) (VDS ≤ 5.0 V, VGS = 4.5 V) VGS(th) Vdc RDS(on) mΩ ID(on) Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc) (1) mV/°C A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 30 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 15 Vdc, Vd ID = 1.0 1 0 Adc, Ad VGS = 10 Vdc Vdc, RG = 6.0 Ω)) (1) ( ) Fall Time Gate Charge See Figure 8 Vd , ID = 4.6 4 6 Adc, Ad , ( DS = 15 Vdc, (V VGS = 10 Vdc) (1) SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(1) (IS = 2.1 Adc, VGS = 0 Vdc) (1) (IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time See Figure 15 ((IS = 2 2.1 1 Adc, Ad , VGS = 0 Vdc, Vd , dIS/dt = 100 A/µs) (1) Reverse Recovery Stored Charge tf — — TBD QT — — TBD Q1 — — — Q2 — — — Q3 — — — — — — — 1.2 — trr — — TBD ta — — — tb — — — QRR — — — VSD ns nC Vdc ns µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Max limit – Typ Cpk = 3 x SIGMA (4) Repetitive rating; pulse width limited by maximum junction temperature. Motorola TMOS Power MOSFET Transistor Device Data 3 MMSF3305 PACKAGE DIMENSIONS –A– M 1 4 R 0.25 (0.010) 4X –B– X 45 _ B M 5 P 8 NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. J M_ C F G –T– K SEATING PLANE 8X D 0.25 (0.010) M T B S A S CASE 751–05 SO–8 ISSUE P DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 STYLE 13: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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