MOTOROLA MTB29N15E

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by MTB29N15E/D
SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
29 AMPERES
150 VOLTS
RDS(on) = 0.07 OHM
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.

• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
N–Channel
D
G
CASE 418B–03, Style 2
D2PAK
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
150
Vdc
150
Vdc
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
29
19
102
Adc
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
PD
125
1.0
2.5
Watts
W/°C
Watts
TJ, Tstg
EAS
– 55 to 150
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Apk
°C
mJ
421
RθJC
RθJA
RθJA
1.0
62.5
50
°C/W
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
TMOS
 Motorola
Motorola, Inc.
1997
Power MOSFET Transistor Device Data
1
MTB29N15E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
150
—
—
TBD
—
—
—
—
—
—
10
100
—
—
100
2.0
—
2.7
TBD
4.0
—
—
0.055
0.07
—
—
—
—
2.4
2.1
gFS
10
18
—
mhos
Ciss
—
2250
3150
pF
Coss
—
455
910
Crss
—
133
190
td(on)
—
17.5
40
tr
—
108
220
td(off)
—
90
180
tf
—
85
170
QT
—
78
110
Q1
—
12
—
Q2
—
37
—
Q3
—
23
—
—
—
0.92
TBD
1.3
—
trr
—
174
—
ta
—
140
—
tb
—
34
—
QRR
—
1.4
—
—
—
3.5
4.5
—
—
—
7.5
—
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
µAdc
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 14.5 Adc)
RDS(on)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 29 Adc)
(ID = 14.5 Adc, TJ = 125°C)
VDS(on)
Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc)
Vdc
mV/°C
Ohms
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vdc VGS = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 75 Vdc,
Vd ID = 29 Adc,
Ad
VGS = 10 Vdc
Vdc,
RG = 9.1 Ω))
Fall Time
Gate Charge
((VDS = 120 Vdc,
Vd , ID = 29 Adc,
Ad ,
VGS = 10 Vdc)
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
VSD
(IS = 29 Adc, VGS = 0 Vdc)
(IS = 29 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
((IS = 29 Adc,
Ad , VGS = 0 Vdc,
Vd ,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
Vdc
ns
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
MTB29N15E
PACKAGE DIMENSIONS
C
E
V
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
1
2
3
S
–T–
SEATING
PLANE
STYLE 2:
PIN 1.
2.
3.
4.
K
J
G
D 3 PL
0.13 (0.005)
H
M
T B
GATE
DRAIN
SOURCE
DRAIN
DIM
A
B
C
D
E
G
H
J
K
S
V
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40
M
CASE 418B–03
ISSUE C
Motorola TMOS Power MOSFET Transistor Device Data
3
MTB29N15E
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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Motorola TMOS Power MOSFET Transistor MTB29N15E/D
Device Data