Order this document by MMDF2N06VL/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS(on) = 0.130 OHM TM D CASE 751–05, Style 11 SO–8 G S Features Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET • Miniature SO–8 Surface Mount Package – Saves Board Space • Mounting Information for SO–8 Package Provided Source–1 1 8 Drain–1 Gate–1 2 7 Drain–1 Source–2 3 6 Drain–2 Gate–2 4 5 Drain–2 Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage, (RGS = 1 MΩ) Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 3.3 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance, Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 0.0625″ from case for 10 seconds Symbol Value Unit VDSS VDGR 60 Vdc 60 Vdc VGS ID ID IDM PD ± 15 Vdc 2.5 0.5 7.5 Adc 2.0 W TJ, Tstg EAS – 55 to 175 °C 54 mJ RθJA 62.5 °C/W TL 260 °C Apk DEVICE MARKING 2N6VL (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. ORDERING INFORMATION Device Reel Size Tape Width Quantity MMDF2N06VLR1 7″ 12mm embossed tape 500 MMDF2N06VLR2 13″ 12mm embossed tape 2500 This document contains information on a new product. Specifications and information herein are subject to change without notice. E–FET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. TMOS Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MMDF2N06VL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 — — 66 — — — — — — 10 100 — — 100 1.0 — 1.5 3.0 2.0 — — 0.12 0.13 — — — — 0.4 0.3 gFS 1.0 3.0 — Mhos Ciss — 340 480 pF Coss — 110 150 Crss — 27 50 td(on) — 10 20 tr — 30 60 td(off) — 32 60 tf — 28 60 QT — 11 20 Q1 — 1.5 — Q2 — 3.8 — Q3 — 3.5 — VSD — — 0.84 0.67 1.2 — Vdc trr — 49 — ns ta — 32 — tb — 17 — QRR — 0.08 — OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 2.5 Adc) RDS(on) Drain–to–Source On–Voltage (VGS = 5.0 Vdc, ID = 2.5 Adc) (VGS = 5.0 Vdc, ID = 1.25 Adc, TJ = 150°C) VDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 1.25 Adc) Vdc mV/°C Ohm Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 30 Vdc, ID = 2.5 Adc, VGS = 5.0 Vdc, RG = 9.1 Ω) Fall Time Gate Charge (VDS = 48 Vdc, ID = 2.5 Adc, VGS = 5.0 Vdc) SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(1) (IS = 2.5 Adc, VGS = 0 Vdc) (IS = 2.5 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 2.5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Storage Charge ns nC µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MMDF2N06VL PACKAGE DIMENSIONS –A– M 1 4 R 0.25 (0.010) 4X –B– X 45 _ B M 5 P 8 NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. J M_ C F G –T– K SEATING PLANE 8X D 0.25 (0.010) M T B S A S CASE 751–05 SO–8 ISSUE P Motorola TMOS Power MOSFET Transistor Device Data DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 3 MMDF2N06VL Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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