Order this document by MMVL229AT1/D SEMICONDUCTOR TECHNICAL DATA 15 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE This device is designed for UHF tuning and general frequency control and tuning. This device is supplied in the SOD–323 plastic surface mount package for high volume, pick and place assembly requirements, and is a member of the Motorola microExecutive series. • High Figure of Merit — Q • Guaranteed Capacitance Range • Controlled and Uniform Tuning Ratio 1 Cathode • 0805 Footprint Compatible SOD–323 package 2 Anode • Available in tape and reel 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating 2 Symbol Value Unit Reverse Voltage VR 15 Vdc Junction Temperature TJ 125 °C Tstg – 55 to +125 °C Storage Temperature Range CASE 477 – 02, STYLE 1 SOD – 323 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Reverse Voltage (IR = 1.0 µAdc) VR 15 — — Vdc Reverse Current (VR = 15 Vdc) IR — — 3.0 nAdc 14 15 16 — 11 — 5.5 6.0 6.5 C2V/10V 2.0 2.5 3.0 rs — 0.27 0.4 Characteristic Capacitance (VR = 2 V, f = 1.0 MHz) C2V Capacitance (VR = 4 V, f = 1.0 MHz) C4V Capacitance (VR = 10 V, f = 1.0 MHz) C10V Capacitance Ratio Series Resistance (VR = 5.0 V, f = 470 MHz) pF pF pF W Replaces MMVL229A Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1998 1 MMVL229AT1 TYPICAL DEVICE CHARACTERISTICS 10 I R , REVERSE CURRENT (nA) C, CAPACITANCE (pF) 100 10 1.0 0 2 4 6 8 10 12 14 TA = 60°C 0.1 TA = 25°C 0.01 0.001 16 0 4 6 8 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Capacitance versus Reverse Voltage Figure 2. Reverse Current versus Reverse Voltage rs , SERIES RESISTANCE (OHMS) 0.40 0.2 0.1 VR = 1 V 0.20 VR = 10 V 0.10 0.00 100 100 10 1.0 VR, REVERSE VOLTAGE (VOLTS) 0 16 0.30 0.0 1000 f, FREQUENCY (MHz) Figure 4. Series Resistance versus Frequency Figure 3. Series Resistance versus Reverse Voltage 10000 5 VR = 1.0 Vdc 4 VR = 2.0 Vdc 3 1000 VR = 4.0 Vdc 2 Q, QUALITY CAPACITANCE CHANGE RATIO (%) 2 VR, REVERSE VOLTAGE (VOLTS) 0.3 r s , SERIES RESISTANCE (OHMS) TA = 80°C 1.0 1 VR = 10 Vdc 0 VR = 10 V 100 VR = 1 V –1 10 –2 –3 –4 –40 –20 0 +20 +40 +60 TA, AMBIENT TEMPERATURE (°C) +80 Figure 5. Capacitance Change Ratio versus Ambient Temperature 2 +100 1.0 100 1000 f, FREQUENCY (MHz) Figure 6. Quality versus Frequency Motorola Small–Signal Transistors, FETs and Diodes Device Data MMVL229AT1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. K A D 1 2 B E C J DIM A B C D E H J K MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H NOTE 3 CASE 477–02 SOD–323 ISSUE A Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMVL229AT1 Motorola reserves the right to make changes without further notice to any products herein. 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