ONSEMI BC307

Order this document
by BC307/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating
Symbol
BC307, B, C
BC308C
Unit
Collector – Emitter Voltage
VCEO
–45
–25
Vdc
Collector – Base Voltage
VCBO
–50
–30
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Characteristic
RqJA
357
°C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC307,B,C
BC308C
V(BR)CEO
–45
–25
—
—
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BC307,B,C
BC308C
V(BR)EBO
–5.0
–5.0
—
—
—
—
Vdc
Collector–Emitter Leakage Current
(VCES = –50 V, VBE = 0)
(VCES = –30 V, VBE = 0)
(VCES = –50 V, VBE = 0) TA = 125°C
(VCES = –30 V, VBE = 0) TA = 125°C
BC307,B,C
BC308C
BC307,B,C
BC308C
—
—
—
—
–0.2
–0.2
–0.2
–0.2
–15
–15
–4.0
–4.0
nAdc
ICES
µA
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Min
Typ
Max
BC307B
BC307C/308C
—
—
150
270
—
—
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BC307
BC307B/308B
BC307C/308C
120
200
420
—
290
500
800
460
800
(IC = –100 mAdc, VCE = –5.0 Vdc)
BC307B
BC307C/308C
—
—
180
300
—
—
—
—
—
–0.10
–0.30
–0.25
–0.3
–0.6
—
—
—
–0.7
–1.0
—
—
–0.55
–0.62
–0.7
—
—
280
320
—
—
—
—
6.0
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
hFE
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
VBE(on)
—
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
BC307,B,C
BC308C
Common Base Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz)
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, f = 200 Hz)
Ccbo
MHz
NF
pF
dB
BC307,B,C
—
2.0
10
BC308C
—
2.0
10
1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
–1.0
VCE = –10 V
TA = 25°C
1.5
–0.9
1.0
0.7
0.5
–0.7
VBE(on) @ VCE = –10 V
–0.6
–0.5
–0.4
–0.3
VCE(sat) @ IC/IB = 10
–0.1
0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50 –100
Figure 2. “Saturation” and “On” Voltages
10
400
300
Cib
7.0
200
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
VBE(sat) @ IC/IB = 10
–0.2
0.3
0.2
–0.2
VCE = –10 V
TA = 25°C
150
100
80
60
5.0
TA = 25°C
3.0
Cob
2.0
40
30
20
–0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
IC, COLLECTOR CURRENT (mAdc)
1.0
–0.4 –0.6
–50
Figure 3. Current–Gain — Bandwidth Product
0.5
0.3
VCE = –10 V
f = 1.0 kHz
TA = 25°C
0.1
0.05
0.03
0.01
–0.1
–0.2
–0.5
–1.0
–2.0
IC, COLLECTOR CURRENT (mAdc)
–5.0
–1.0
–2.0
–4.0 –6.0 –10
VR, REVERSE VOLTAGE (VOLTS)
–20 –30 –40
Figure 4. Capacitances
r b′, BASE SPREADING RESISTANCE (OHMS)
1.0
hob, OUTPUT ADMITTANCE (OHMS)
TA = 25°C
–0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
–10
Figure 5. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150
140
130
VCE = –10 V
f = 1.0 kHz
TA = 25°C
120
110
100
–0.1
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0
IC, COLLECTOR CURRENT (mAdc)
–5.0
–10
Figure 6. Base Spreading Resistance
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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4
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BC307/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data