ONSEMI MPSA93

Order this document
by MPSA92/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
*Motorola Preferred Device
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
MPSA92
MPSA93
Unit
Collector – Emitter Voltage
VCEO
–300
–200
Vdc
Collector – Base Voltage
VCBO
–300
–200
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
–300
–200
—
—
–300
–200
—
—
–5.0
—
—
—
–0.25
–0.25
—
–0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V(BR)CEO
MPSA92
MPSA93
V(BR)CBO
MPSA92
MPSA93
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
(VCB = –160 Vdc, IE = 0)
V(BR)EBO
Vdc
IEBO
Vdc
µAdc
ICBO
MPSA92
MPSA93
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
Vdc
µAdc
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1998
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
Both Types
Both Types
25
40
—
—
MPSA92
MPSA93
25
25
—
—
—
—
–0.5
–0.4
VBE(sat)
—
–0.9
Vdc
fT
50
—
MHz
—
—
6.0
8.0
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
hFE
—
VCE(sat)
MPSA92
MPSA93
Base–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
2
v 300 ms, Duty Cycle v 2.0%.
Ccb
MPSA92
MPSA93
pF
Motorola Small–Signal Transistors, FETs and Diodes Device Data
300
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
250
200
25°C
150
–55°C
100
50
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Cib @ 1MHz
10
Ccb @ 1MHz
1.0
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
150
130
110
90
70
50
TJ = 25°C
VCE = 20 Vdc
F = 20 MHz
30
10
1
3
5
11
13
15
7
9
IC, COLLECTOR CURRENT (mA)
17
19
21
Figure 3. Current–Gain — Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ –55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ –55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ –55°C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
N
CASE 029–11
(TO–226AA)
ISSUE AJ
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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4
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MPSA92/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data