Freescale Semiconductor, Inc. Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc... N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 175 MHz, 12.5 Volts Output Power — 50 Watts Power Gain — 12 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Broadband–Full Power Across the Band: 135–175 MHz • Broadband Demonstration Amplifier Information Available Upon Request • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 175 MHz, 50 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1264–09, STYLE 1 TO–272 PLASTIC MRF1550T1 CASE 1264A–02, STYLE 1 TO–272 STRAIGHT LEAD PLASTIC MRF1550FT1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 40 Vdc Gate–Source Voltage VGS ±20 Vdc Drain Current — Continuous ID 12 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 165 0.50 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 175 °C Symbol Max Unit RθJC 0.75 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ – TC RθJC NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MRF1550T1 MRF1550FT1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS — — 0.5 µAdc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 800 µA) VGS(th) 1 — 3 Vdc Drain–Source On–Voltage (VGS = 5 Vdc, ID = 1.2 A) RDS(on) — — 0.5 Ω Drain–Source On–Voltage (VGS = 10 Vdc, ID = 4.0 Adc) VDS(on) — — 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss — — 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss — — 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss — — 35 pF 10 — — 50 — — Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS Freescale Semiconductor, Inc... DYNAMIC CHARACTERISTICS RF CHARACTERISTICS (In Motorola Test Fixture) Common–Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz Drain Efficiency (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz Load Mismatch (VDD = 15.6 Vdc, f = 175 MHz, 2 dB Input Overdrive, VSWR 20:1 at All Phase Angles) MRF1550T1 MRF1550FT1 2 Gps η Ψ dB % No Degradation in Output Power Before and After Test MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. B1 C1 C2 C3 C4, C16 C5 C6 C7, C17 C8, C18 C9, C19 C10 C11, C12 C13 C14 C15 C20 L1 L2 L3 L4 L5 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Z11 Board Ferroxcube #VK200 180 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 240 pF, 100 mil Chip Capacitor 300 pF, 100 mil Chip Capacitors 10 µF, 50 V Electrolytic Capacitors 0.1 µF, 100 mil Chip Capacitors 470 pF, 100 mil Chip Capacitor 200 pF, 100 mil Chip Capacitors 22 pF, 100 mil Chip Capacitor 30 pF, 100 mil Chip Capacitor 6.8 pF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 18.5 nH, Coilcraft #A05T 5 nH, Coilcraft #A02T 1 Turn, #24 AWG, 0.250″ ID 1 Turn, #26 AWG, 0.240″ ID 3 Turn, #24 AWG, 0.180″ ID Type N Flange Mounts 5.1 Ω, 1/4 W Chip Resistor 39 Ω Chip Resistor (0805) 1 kΩ, 1/8 W Chip Resistor 33 kΩ, 1/4 W Chip Resistor 1.000″ x 0.080″ Microstrip 0.400″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 0.100″ x 0.223″ Microstrip 0.160″ x 0.080″ Microstrip 0.260″ x 0.080″ Microstrip 0.280″ x 0.080″ Microstrip 0.270″ x 0.080″ Microstrip 0.730″ x 0.080″ Microstrip Glass Teflon, 31 mils Figure 1. 135 – 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS ,-. / + &0 %%%##%!&'$ %%%!"#$ Freescale Semiconductor, Inc... ,-. ,-. / + &0 + + + + )* !"#$ + Figure 2. Output Power versus Input Power MOTOROLA RF DEVICE DATA + ( ,-. ( ,-. ( ,-. ( !"#$ Figure 3. Input Return Loss versus Output Power For More Information On This Product, Go to: www.freescale.com MRF1550T1 MRF1550FT1 3 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS ,-. "%!&'$ h%"% 3%!4$ ,-. ,-. ,-. ,-. !"#$ / + &0 Figure 4. Gain versus Output Power !"#$ ,-. h%"% 3%!4$ ,-. ,-. ,-. / + &0 )* / &'2 1 '"# !2"$ ,-. ,-. / + &0 )* / &'2 Figure 6. Output Power versus Biasing Current 1 '"# !2"$ Figure 7. Drain Efficiency versus Biasing Current ,-. h%"% 3%!4$ %%%!"#$ Figure 5. Drain Efficiency versus Output Power %%%!"#$ ,-. / + &0 Freescale Semiconductor, Inc... ,-. ,-. ,-. 1 / 2" )* / &'2 #3 " !#$ Figure 8. Output Power versus Supply Voltage MRF1550T1 MRF1550FT1 4 ,-. ,-. 1 / 2" )* / &'2 #3 " !#$ Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. / Ω 5 / ,-. 5 / ,-. )* Freescale Semiconductor, Inc... 6 5 / ,-. 5 / ,-. / + 1 / 2" / Zin f MHz Zin Ω ZOL* Ω 135 4.1 + j0.5 1.0 + j0.6 155 4.2 + j1.7 1.2 + j.09 175 3.7 + j2.3 0.7 + j1.1 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. *7 ,809)*: ;<=> 7 ,809)*: ;<=> ;?)0; *&;= ;@ Z in Z * OL Figure 10. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF1550T1 MRF1550FT1 5 Freescale Semiconductor, Inc. Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) Freescale Semiconductor, Inc... IDQ = 500 mA S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.93 –178 4.817 80 0.009 –39 0.86 –176 100 0.94 –178 2.212 69 0.009 –3 0.88 –175 150 0.95 –178 1.349 61 0.008 –8 0.90 –174 200 0.95 –178 0.892 54 0.006 –13 0.92 –174 250 0.96 –178 0.648 51 0.005 –7 0.93 –174 300 0.97 –178 0.481 47 0.004 –8 0.95 –174 350 0.97 –178 0.370 46 0.005 4 0.95 –174 400 0.98 –178 0.304 43 0.001 15 0.97 –174 450 0.98 –178 0.245 43 0.005 81 0.97 –174 500 0.98 –178 0.209 43 0.003 84 0.97 –174 550 0.99 –177 0.178 41 0.007 70 0.98 –175 600 0.98 –178 0.149 41 0.010 106 0.96 –175 IDQ = 2.0 mA S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.93 –177 4.81 80 0.003 –119 0.93 –178 100 0.94 –178 2.20 69 0.006 4 0.93 –178 150 0.95 –178 1.35 61 0.003 –1 0.93 –177 200 0.95 –178 0.89 54 0.004 18 0.93 –176 250 0.96 –178 0.65 51 0.001 28 0.94 –176 300 0.97 –178 0.48 47 0.004 77 0.94 –175 350 0.97 –178 0.37 46 0.006 85 0.95 –175 400 0.98 –178 0.30 43 0.007 53 0.96 –174 450 0.98 –178 0.25 43 0.006 74 0.97 –174 500 0.98 –177 0.21 44 0.006 84 0.97 –174 550 0.99 –177 0.18 41 0.002 106 0.97 –175 600 0.98 –178 0.15 41 0.004 116 0.96 –174 IDQ = 4.0 mA S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.97 –179 5.04 87 0.002 –116 0.94 –179 100 0.96 –179 2.43 82 0.006 42 0.94 –178 150 0.96 –179 1.60 77 0.004 13 0.94 –177 200 0.96 –179 1.14 74 0.003 43 0.95 –176 250 0.97 –179 0.89 71 0.004 65 0.95 –175 300 0.97 –179 0.71 68 0.006 68 0.95 –175 350 0.97 –179 0.57 67 0.006 74 0.97 –174 MRF1550T1 MRF1550FT1 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) (continued) IDQ = 4.0 mA (continued) S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 400 0.97 –179 0.49 63 0.005 58 0.97 –173 450 0.98 –178 0.41 63 0.005 73 0.98 –173 500 0.98 –178 0.36 62 0.003 128 0.98 –173 550 0.98 –178 0.32 58 0.004 57 0.99 –174 600 0.98 –178 0.27 58 0.009 83 0.98 –174 Freescale Semiconductor, Inc... f MHz MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF1550T1 MRF1550FT1 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common–source, RF power, N–Channel enhancement mode, Lateral Metal–Oxide Semiconductor Field–Effect Transistor (MOSFET). Motorola Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to–source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. =8)* :& 8; &@ )@@ / :& :@ @@ / :& &@ =@@ / :& :@ #=0; DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full–on condition. This on–resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate–source voltage and drain current. The MRF1550T1 MRF1550FT1 8 drain–source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high – on the order of 109 Ω — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate–to–source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate–to–source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate–drain capacitance. If the gate–to–source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate–threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two–port stability analysis with this device’s S–parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, “RF Small–Signal Design Using Two–Port Parameters” for a discussion of two port network theory and stability. Freescale Semiconductor, Inc... MOUNTING The specified maximum thermal resistance of 0.75°C/W assumes a majority of the 0.170″ x 0.608″ source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, “Thermal Management and Mounting Method for the PLD–1.5 RF Power Surface Mount Package,” and Engineering Bulletin EB209/D, “Mounting Method for RF Power Leadless Surface Mount Transistor” for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large–signal MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF1550T1 MRF1550FT1 9 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A E1 B r1 4 b2 4X 888 , 1 " D1 888 , DRAIN ID " 2X b1 888 Freescale Semiconductor, Inc... 6 5 , 2 " D 5 4X e 3 6 4 4X b3 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ C SEATING PLANE D SEATING PLANE A H E2 Y Y A1 L q A2 c1 #3 A + + + + + + # !,,$ " # !,,$ # !,,$ " # !,,$ CASE 1264–09 ISSUE J TO–272 PLASTIC MRF1550T1 MRF1550T1 MRF1550FT1 10 NOTE 6 3 2 1 E2 VIEW Y–Y E DATUM PLANE DRAIN ID #A + ,#A - + + ,## " "# "#, 3+, + + ", " (-( # " " " " # - - " - - " B# - "# '3 " - - " + + ,# " , #+ ""' # # + #+ ,# " , ,#,"- " " , " ", " (-(+ + ,## C " C ",'" #+ ""' ",'" # #-" ' + " B## - C " C ,## " ,"B,, ,"" + + ##-"- ## - B# "" - -" #+ INCHES MIN MAX + + + + + + + + + + + + + + + + + + + + + + + + + + +%'# + + %_ %_ + DIM A A1 A2 D D1 E E1 E2 L b1 b2 b3 c1 e r1 q aaa MILLIMETERS MIN MAX + + + + + + + + + + + + + + + + + + + + + + + + + + +%'# + + _ _ + MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 2X 888 4X , P , E2 " ' b2 888 A E1 B " 4 1 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 6 DRAIN ID 2X b1 888 , " 5 2 D D2 5 Freescale Semiconductor, Inc... 4X e 6 3 4 4X b3 D1 888 , " E A SEATING PLANE F Y ZONE "J" Y A1 #3 A + + + + + + 6 A2 # !,,$ " # !,,$ # !,,$ " # !,,$ CASE 1264A–02 ISSUE A TO–272 STRAIGHT LEAD PLASTIC MRF1550FT1 MOTOROLA RF DEVICE DATA NOTE 5 3 2 1 CCC " ' VIEW Y–Y c1 D DRAIN ID #A + ,#A -+ + ,## " "# "#, 3+, + + ,## " , #+ ""' # # + #+ ,## " , ,#,"- " " , " ", " (-(+ + ,## C " C ",'" #+ ""' ",'" # #-" ' + " B## - C " C ,## " ,"B,, ,"" + + ##-"- ## - B# "" - -" #+ + ,# " "# - D 3+ DIM A A1 A2 D D1 D2 E E1 E2 F P b1 b2 b3 c1 e aaa bbb For More Information On This Product, Go to: www.freescale.com INCHES MIN MAX + + + + + + + + +%'# +%'# + + + + +%'# +%'# + + + + + + + + + + +%'# + + MILLIMETERS MIN MAX + + + + + + + + +%'# +%'# + + + + +%'# +%'# + + + + + + + + + + +%'# + + MRF1550T1 MRF1550FT1 11 Freescale Semiconductor, Inc... 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Box 5405, Denver, Colorado 80217 1–800–521–6274 or 480–768–2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852–26668334 HOME PAGE: http://motorola.com/semiconductors MRF1550T1 MRF1550FT1 12 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, Go to: www.freescale.com MRF1550T1/D