Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts (PEP) Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = –29 dBc • Typical Single–Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts (CW) Power Gain = 9.5 dB Efficiency = 45% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW) Output Power 30 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–01, STYLE 1 (MRF284) CASE 360C–03, STYLE 1 (MRF284S) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ± 20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 87.5 0.5 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 2.0 °C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) IDSS — — 1.0 µAdc Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 10 µAdc Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF284 MRF284S 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 µAdc) VGS(th) 2.0 3.0 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 200 mAdc) VGS(q) 3.0 4.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) — 0.3 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) gfs 1.0 1.5 — S Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 43 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss — 23 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.4 — pF Common–Source Power Gain (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 9 10.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 30 35 — % Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — –32 –29 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 9 15 — dB Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 9 10.4 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) η — 35 — % Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — –34 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL 9 15 — dB Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Gps 8.5 9.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) η 35 45 — % Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz, VSWR = 10:1, at All Phase Angles) Ψ ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (in Motorola Test Fixture) MRF284 MRF284S 2 No Degradation In Output Power MOTOROLA RF DEVICE DATA VGG(BIAS) + B1 B2 B3 C1 R1 C4 R2 C7 R3 B5 B6 R4 C12 R5 C14 R6 C17 + C5 C8 C13 C15 VDD(DCSupply) + + B4 – L3 L1 RF INPUT Z1 L2 Z2 Z3 Z4 Z5 Z6 Z9 Z7 Z8 Z10 Z11 _ L4 Z12 Z13 DUT Z14 Z15 RF OUTPUT C16 C10 C11 C6 C2 B1 – B6 C1, C17 C2 C3, C9 C4, C14 C5, C15 C6, C16 C7, C12 C8, C13 C10 C11 L1 L2, L3 L4 R1 – R6 Z1 Z2 C3 C9 Ferrite Bead, Round 470 µF, 63 V, Mallory Electrolytic Capacitor 0.6 – 4.5 pF Johansen Gigatrim Variable Capacitors 0.8 – 8.0 pF Johansen Gigatrim Variable Capacitors 0.1 µF Chip Capacitor, KEMET 91 pF ATC RF Chip Capacitors, Case “B” 10 pF ATC RF Chip Capacitors, Case “B” 1000 pF ATC RF Chip Capacitors, Case “B” 5.1 pF ATC RF Chip Capacitors, Case “B” 2.7 pF ATC RF Chip Capacitors, Case “B” 0.4 – 2.5 pF Johansen Gigatrim Variable Capacitors 4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH 9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH 2 Turns, #24 AWG, 0.85″ OD, 0.042″ ID, 0.064″ Long, 5.2 nH 12 Ω Fixed Film Chip Resistor 0.08″ x 0.13″ 0.145″ x 0.080″ Microstrip 0.680″ x 0.080″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Board 0.185″ x 0.080″ Microstrip 0.395″ x 0.080″ Microstrip 0.490″ x 0.080″ Microstrip 0.035″ x 0.325″ Microstrip 0.240″ x 0.325″ Microstrip 0.210″ x 0.515″ Microstrip 0.130″ x 0.515″ Microstrip 0.080″ x 0.515″ Microstrip 0.190″ x 0.325″ Microstrip 0.090″ x 0.325″ Microstrip 0.515″ x 0.080″ Microstrip 0.860″ x 0.080″ Microstrip 0.510″ x 0.080″ Microstrip 0.030″ Glass Teflon, 2 oz Copper, 3 x 5″ Dimensions, Manufacturer; Arlon, P/N: GX0300–55–22, εr = 2.55 Figure 1. Schematic of 1.93–2.0 GHz Broadband Test Circuit MOTOROLA RF DEVICE DATA MRF284 MRF284S 3 VSUPPLY + + R1 C1 R3 + VDD P1 B1 VDD + B3 B4 B5 R9 R10 R11 C15 B2 + Q1 R4 R2 Q2 R6 R5 + C9 C7 R7 C8 R8 C11 C2 C13 C10 C16 C4 – L4 L1 RF INPUT Z1 L3 Z2 Z3 Z4 Z5 Z6 Z10 Z7 Z8 Z9 Z11 Z12 Z13 DUT Z14 Z15 Z16 RF OUTPUT C14 C12 C17 C3 L2 B1 – B5 C1, C9, C16 C2, C13 C3, C14 C4, C11 C5 C6 C7, C15 C8 C10 C12, C17 L1 L2 L3, L4 P1 Q1 Q2 R1 R2 R3 R4 C5 C6 Ferrite Bead, Round 100 µF, 50 V, Electrolytic Capacitor, Sprague 51 pF, ATC RF Chip Capacitors, Case “B” 10 pF, ATC RF Chip Capacitors, Case “B” 12 pF, ATC RF Chip Capacitors, Case “B” 0.8 – 8.0 pF Variable Capacitor, Johansen Gigatrim 4.7 pF, ATC RF Chip Capacitor, Case “B” 91 pF, ATC RF Chip Capacitors, Case “B” 1000 pF, ATC RF Chip Capacitor, Case “B” 0.1 µF, Chip Capacitor, KEMET 0.6 – 4.5 pF, Variable Capacitors, Johansen Gigatrim 4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH 5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID, 0.128″ Long, 12.5 nH 9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH 1000 Ohm Potentiometer, 1/2 W, 10 Turns Transistor, NPN, Motorola P/N: MJD31, Case 369A–10 Transistor, PNP, Motorola P/N: MJD32, Case 369A–10 360 Ω, Fixed Film Chip Resistor 0.08″ x 0.13″ 2 x 12 kΩ, Fixed Film Chip Resistor 0.08″ x 0.13″ 1 Ω, Wirewound, 5 W, 3% Resistor 4 x 6.8 kΩ, Fixed Film Chip Resistor 0.08″ x 0.13″ R5 R6 R7 – R11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Raw PCB Material 2 x 1500 Ω, Fixed Film Chip Resistor 0.08″ x 0.13″ 270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″ 12 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″ 0.363″ x 0.080″ Microstrip 0.080″ x 0.080″ Microstrip 0.916″ x 0.080″ Microstrip 0.517″ x 0.080″ Microstrip 0.050″ x 0.325″ Microstrip 0.050″ x 0.325″ Microstrip 0.071″ x 0.325″ Microstrip 0.125″ x 0.325″ Microstrip 0.210″ x 0.515″ Microstrip 0.210″ x 0.515″ Microstrip 0.235″ x 0.325″ Microstrip 0.02″ x 0.325″ Microstrip 0.02″ x 0.325″ Microstrip 0.510″ x 0.080″ Microstrip 0.990″ x 0.080″ Microstrip 0.390″ x 0.080″ Microstrip 0.030″ Glass Teflon, 2 oz Copper, 3 x 5″ Dimensions, Manufacturer; Arlon, P/N: GX–0300–55–22, εr = 2.55 Figure 2. Schematic of 2.0 GHz Class A Test Circuit MRF284 MRF284S 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 14 45 35 13 40 30 12 25 11 10 20 Gpe 15 9 8 10 VDD = 26 Vdc IDQ = 200 mA f = 2000 MHz Single Tone 5 0 4W 0 1.0 0.5 3.5 35 2W 30 25 Pin = 1 W 20 VDD = 26 Vdc IDQ = 200 mA Single Tone 15 7 2.0 3.0 1.5 2.5 Pin, INPUT POWER (WATTS) 3W 6 4.0 10 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz) 12 – 20 VDD = 26 Vdc IDQ = 200 mA – 30 f = 2000.0 MHz 1 f2 = 2000.1 MHz – 40 – 50 Figure 4. Output Power versus Frequency –15 Gpe 3rd Order 5th Order – 60 10 –20 9 –25 7th Order –30 8 Pout = 30 W (PEP) IDQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 7 – 70 – 80 0.1 –10 11 G pe , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Output Power & Power Gain versus Input Power 6 16 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 18 26 –40 28 13 – 20 – 30 24 20 22 VDD, DRAIN SUPPLY VOLTAGE (Vdc) –35 Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz IDQ = 400 mA 12 G pe , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 5. Intermodulation Distortion versus Output Power IMD IMD, INTERMODULATION DISTORTION (dBc) Pout G pe , GAIN (dB) , OUTPUT POWER (WATTS) Pout Pout , OUTPUT POWER (WATTS) 40 100 mA – 40 300 mA 300 mA 200 mA 11 10 200 mA – 50 9 IDQ = 400 mA – 60 0.1 1.0 10 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA 8 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power Gain versus Output Power MOTOROLA RF DEVICE DATA MRF284 MRF284S 5 TYPICAL CHARACTERISTICS 3 100 Ciss Tflange = 100°C C, CAPACITANCE (pF) ID, DRAIN CURRENT (Adc) Tflange = 75°C 2 1 Coss 10 TJ = 175°C Crss 0 0 4 8 12 16 20 24 28 1 0 4 VDD, DRAIN SUPPLY VOLTAGE (Vdc) Pout , OUTPUT POWER (dBm) Figure 9. DC Safe Operating Area 60 50 40 30 20 10 0 –10 – 20 – 30 – 40 – 50 – 60 –70 – 80 – 90 8 16 12 20 24 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 28 Figure 10. Capacitance versus Drain Source Voltage FUNDAMENTAL 3rd Order VDD = 26 Vdc IDQ = 1.8 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 0 5 10 15 20 25 30 35 40 Pin, INPUT POWER (dBm) 45 50 55 60 Figure 11. Class A Third Order Intercept Point MRF284 MRF284S 6 MOTOROLA RF DEVICE DATA 45 GAIN 40 Gp , GAIN (dB) 9 35 η Pout = 30 Watts (PEP) VDD = 26 Vdc, IDQ = 200 mA Two–Tone Frequency Delta = 100 kHz 8 7 30 6 IMD –36 5 4 VSWR 3 1920 1940 1960 f, FREQUENCY (MHz) 3.0 –32 1980 –40 2000 INTERMODULATION DISTORTION (dBc) 10 2.0 INPUT VSWR 11 EFFICIENCY (%) TYPICAL CHARACTERISTICS 1.0 Figure 12. 1.92–2.0 GHz Broadband Circuit Performance MTBF FACTOR (HOURS x AMPS 2 ) 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 0 50 100 150 200 250 TJ, JUNCTION TEMPERATURE (°C) This graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperature have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 13. MTBF Factor versus Junction Temperature MOTOROLA RF DEVICE DATA MRF284 MRF284S 7 + j1 + j0.5 + j2 + j3 Zin 2 GHz + j0.2 + j5 Zo = 1 Ω 0.2 0.0 0.5 + j10 2 GHz f = 1.8 GHz 1 2 3 5 ZOL* f = 1.8 GHz – j10 – j5 – j0.2 – j3 – j2 – j0.5 – j1 VCC = 26 V, ICQ = 200 mA, Pout = 15 Wavg f MHz Zin(1) Ω ZOL* Ω 1800 1.0 + j0.4 2.1 – j0.4 1860 1.0 + j0.8 2.2 + j0.2 1900 1.0 + j1.1 2.3 + j0.5 1960 1.0 + j1.4 2.5 + j0.9 2000 1.0 + j2.3 2.6 + j0.92 Zin(1)= Conjugate of fixture base terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 14. Series Equivalent Input and Output Impedence MRF284 MRF284S 8 MOTOROLA RF DEVICE DATA Table 1. Common Source S–Parameters at VDS = 26 Vdc, ID = 1.8 Adc f GHz GH S11 S21 S12 S22 |S11| ∠f |S21| ∠f |S12| ∠f |S22| ∠f 1.0 0.902 –170 1.10 28 0.005 60 0.913 –162 1.1 0.934 –167 0.92 26 0.006 82 0.921 –163 1.2 0.948 –167 0.85 24 0.007 89 0.924 –164 1.3 0.957 –169 0.73 21 0.009 94 0.929 –165 1.4 0.959 –169 0.68 19 0.011 94 0.931 –165 1.5 0.960 –170 0.59 17 0.014 94 0.933 –167 1.6 0.958 –172 0.53 14 0.015 92 0.936 –168 1.7 0.958 –172 0.50 13 0.016 93 0.936 –169 1.8 0.956 –174 0.45 10 0.019 92 0.937 –170 1.9 0.954 –175 0.43 8 0.020 90 0.937 –171 2 0.944 –177 0.39 6 0.023 82 0.937 –173 2.1 0.934 –177 0.38 4 0.023 72 0.935 –174 2.2 0.935 –178 0.35 –1 0.013 72 0.932 –176 2.3 0.945 180 0.31 –4 0.016 116 0.925 –179 2.4 0.944 178 0.30 –5 0.023 112 0.930 –179 2.5 0.946 177 0.29 –7 0.024 105 0.935 179 2.6 0.941 174 0.25 –11 0.025 112 0.930 176 MOTOROLA RF DEVICE DATA MRF284 MRF284S 9 NOTES MRF284 MRF284S 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. G 1 –B– DIM A B C D E F G H K N Q 3 Q 2 PL 2 K 0.25 (0.010) D E H T A M B M C F N M –T– SEATING PLANE INCHES MIN MAX 0.790 0.810 0.220 0.240 0.125 0.175 0.205 0.225 0.050 0.070 0.004 0.006 0.562 BSC 0.070 0.090 0.215 0.255 0.350 0.370 0.120 0.140 MILLIMETERS MIN MAX 20.07 20.57 5.59 6.09 3.18 4.45 5.21 5.71 1.27 1.77 0.11 0.15 14.27 BSC 1.78 2.29 5.47 6.47 8.89 9.39 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE –A– CASE 360B–01 ISSUE O (MRF284) 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– 2 K E D N F H 3 C –T– DIM A B C D E F H K N INCHES MIN MAX 0.370 0.390 0.220 0.240 0.105 0.155 0.205 0.225 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.350 0.370 MILLIMETERS MIN MAX 9.40 9.91 5.59 6.09 2.67 3.94 5.21 5.71 0.89 1.14 0.11 0.15 1.45 1.70 2.16 2.92 8.89 9.39 SEATING PLANE –A– STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 360C–03 ISSUE B (MRF284S) MOTOROLA RF DEVICE DATA MRF284 MRF284S 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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