Order this document by MRF840/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 806 – 960 MHz. • Specified 12.5 Volt, 870 MHz Characteristics Output Power = 10 Watts Power Gain = 6.0 dB Min Efficiency = 50% Min 10 W, 870 MHz RF POWER TRANSISTOR NPN SILICON • Series Equivalent Large–Signal Characterization • Internally Matched Input for Broadband Operation • Tested for Load Mismatch Stress at All Phase Angles with 20:1 VSWR @ 15.5 Volt Supply and 50% RF Overdrive • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Silicon Nitride Passivated CASE 319–07, STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 3.8 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 40 0.32 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 3.1 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 2.0 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF840 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 10 — — — Cob — 24 35 pF Common–Base Amplifier Power Gain (Pout = 10 W, VCC = 12.5 Vdc, f = 870 MHz) GPE 6.0 7.0 — dB Collector Efficiency (Pout = 10 W, VCC = 12.5 Vdc, f = 870 MHz) η 50 55 — % Load Mismatch Stress (VCC = 15.5 Vdc, Pin = 3.0 W, (3) f = 870 MHz, VSWR = 20:1, all phase angles) — ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power NOTE: 3. Pin = 150% of the typical input power requirement for 10 W output power @ 12.5 Vdc. L1 L6 C4 SHORTING PLUG RF INPUT SOCKET L2 C2 SOCKET L5 C3 ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ C1 T1 C9 C10 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ L3 ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ L4 C5 C7 D.U.T. C12 T2 C1, C12 — 50 pF, 100 Mil Chip Capacitor C2, C11 — 15 µF, 20 V Tantalum C3, C10 — 1000 pF, 350 V UNELCO C4, C9 — 91 pF Mini–Underwood C5 — 15 pF C6 — 15 pF C7 — 15 pF C8 — 15 pF ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ RF OUTPUT T4 T3 C6 C11 L7 C8 L1, L6 — 11 Turns 20 AWG Around 10 Ω 1/2 W Resistor L2, L5 — Ferrite Bead L3, L4 — 4 Turn 20 AWG 0.2″ I.D. T1, T4 — ZO = 50 Ω T2 — ZO = 30 Ω ȏ = λ/4 @ 838 MHz T3 — ZO = 13.5 Ω ȏ= λ/4 @ 838 MHz L7 — 18 AWG Wire Loop 0.25″ 0.5″ Figure 1. 870 MHz Test Circuit MRF840 2 MOTOROLA RF DEVICE DATA 14 13 12 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 14 10 8 6 4 2 0 f = 870 MHz 0 0.5 1 1.5 2 2.5 Pin = 3 W 12 11 2W 10 9 8 7 6 1W 5 3 VCC = 12.5 V 4 800 3.5 820 840 Pin, INPUT POWER (WATTS) 860 880 900 f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 20 Pout , OUTPUT POWER (WATTS) 18 Pin = 3 W 16 14 2W 12 10 1W 8 6 4 f = 870 MHz 2 0 6 7 8 9 10 11 12 13 14 15 16 VCC, SUPPLY VOLTAGE (Vdc) Figure 4. Output Power versus Supply Voltage 0 2 1 ZOL* 870 836 2 Pout = 10 W, VCC = 12.5 Vdc 2 4 900 6 f = 800 MHz 3 f = 800 MHz4 870 Zin 836 6 900 f MHz Zin Ohms ZOL* Ohms 800 836 870 900 2.0 + j6.1 2.0 + j6.2 2.0 + j6.4 2.0 + j6.8 3.3 – j0.4 3.0 – j0.3 2.5 + j0.0 2.0 + j0.3 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 5. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF840 3 PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M T A M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 -N1 2 3 DIM A B C D E F H J K L N Q K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M M N M J C H E -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 BASE (COMMON) EMITTER (INPUT) BASE (COMMON) BASE (COMMON) COLLECTOR (OUTPUT) BASE (COMMON) CASE 319–07 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF840 4 ◊ *MRF840/D* MRF840/D MOTOROLA RF DEVICE DATA