MICROSEMI 2N5116

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/476
DEVICES
LEVELS
2N5114
2N5115
2N5116
MQ = JAN Equivalent
MX = JANTX Equivalent
MV = JANTXV Equivalent
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Voltage
Symbol
All Devices
Unit
VGS
30
Vdc
VDS
30
Vdc
VDG
30
Vdc
IG
50
mAdc
PT
0.500
W
Tstg
-65 to +200
°C
(1)
Drain-Source Voltage
(1)
Drain-Gate Voltage
Gate Current
Power Dissipation
TA = +25°C
(2)
Storage Temperature Range
(1) Symmetrical geometry allows operation of those units with source / drain leads interchanged.
(2) Derate linearly 3.0 mW/°C for TA > 25°C.
TO-18
(TO-206AA)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 μA dc
V(BR)GSS
30
Drain-Source “On” State Voltage
VGS = 0V dc, ID = -15mA dc
VGS = 0V dc, ID = -7.0mA dc
VGS = 0V dc, ID = -3.0mA dc
2N5114
2N5115
2N5116
Gate Reverse Current
VDS = 0, VGS = 20V dc
Max.
Unit
Vdc
VDS(on)
-1.3
-0.8
-0.6
Vdc
IGSS
500
pAdc
-500
-500
-500
pAdc
Drain Current Cutoff
VGS = 12V dc, VDS = -15V dc
VGS = 7.0V dc, VDS = -15V dc
VGS = 5.0V dc, VDS = -15V dc
2N5114
2N5115
2N5116
ID(off)
Zero Gate Voltage Drain Current
VGS = 0, VDS = -18V dc
VGS = 0, VDS = -15V dc
VGS = 0, VDS = -15V dc
2N5114
2N5115
2N5116
IDSS
-30
-15
-5.0
-90
-60
-25
mAdc
Gate-Source Cutoff
VDS = -15, ID = -1.0nA dc
VDS = -15, ID = -1.0nA dc
VDS = -15, ID = -1.0nA dc
2N5114
2N5115
2N5116
VGS(off)
5.0
3.0
1.0
10
6.0
4.0
Vdc
T4-LDS-0006 Rev. 1 (063387)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/476
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Small-Signal Drain-Source “On” State Resistance
VGS = 0, ID = -1.0mA dc
2N5114
2N5115
2N5116
Min.
rds(on)1
Small-Signal Drain-Source “On” State Resistance
VGS = 0, ID = 0; f = 1kHz
2N5114
2N5115
2N5116
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = -15V dc, f = 1.0MHz
2N5114, 2N5115
2N5116
Unit
75
100
175
Ω
75
100
175
Ω
Crss
7.0
pF
Ciss
25
27
pF
rds(on)2
Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance
2N5114
VGS = 12V dc, VDS = 0
2N5115
VGS = 7.0V dc, VDS = 0
2N5116
VGS = 5.0V dc, VDS = 0
Max.
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
T4-LDS-0006 Rev. 1 (063387)
Symbol
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
tdon
See Figure 2 of
MIL-PRF-19500/476
Min.
Max.
6
10
25
Unit
ηs
tr
10
20
35
ηs
tdoff
6
8
20
ηs
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