2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts POWER Unit: inch (mm) SOT-323 200 mWatts .087(2.2) .070(1.8) .054(1.35) .045(1.15) .087(2.2) .078(2.0) • N-channel enhancement mode field effect transistor,designed for high speed pulse amplifier and drive application,which ismanufactured by the N-channel DMOS process. • High density cell design for low R DS(ON) • Voltage controlled small signal switching. • Rugged and reliabale. • High saturation current capability. • High-speed switching.CMOS logic compatible. • CMOS logic compatible input. • Not thermal runaway. • No secondary breakdown. • Pb free product : 99% Sn above can meet RoHS environment substance directive request .004(.10)MIN. FEATURES .006(.15) .002(.05) .056(1.40) .047(1.20) .016(.40) .078(.20) MECHANICAL DATA .044(1.1) .035(0.9) .004(.10)MAX. • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0048 gram • Marking: 72W ABSOLUTE RATINGS PA RA M E TE R S ym b o l Va l ue U ni t s D r a i n- S o ur c e Vo l t a g e e V DSS 60 V D r a i n- g a t e Vo l t a g e e V D RG 60 V G a t e - S o ur c e Vo l t a g e V GS S 20 V D r a i n C ur r e nt ID 11 5 mA To t a l P o w e r D i s s i p a t i o n PD 200 mW T J , T S TG -5 5 to + 1 5 0 R θJ A 625 O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e The r m a l R i s i s t a nc e , J unc t i o n- t o - A m b i e nt O O C C /W D 3 Note 1: R GS <20K Ω Top View 2: FR-5 board 1.0x0.75x0.062 inch witg minmum recommended pad layout STAD-DEC.07.2005 1 2 G S PAGE . 1 2N7002W ELECTRICAL CHARACTERISTICS TA=25OC Unless otherwise noted PAR AME T E R S ymbol Te s t C o n d i t i o n MIN . T Y P. MAX . U n its V G S = 0 V , ID = 1 0 u A 60 80 -- V OF F C H AR AC T E R IS T IC S D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S V D S = 6 0 V, V GS = 0 V, TJ = 2 5 O C V D S = 6 0 V, V GS = 0 V, TJ = 1 2 5 O C -- -- 1 .0 0 .5 uA mA Ga te -B o d y L e a k a g e , F o rwa rd IGS S F V D S =0 , V GS =2 0 V -- -- 100 nA G a t e - B o d y L e a k a g e , R e ve r s e IGS S R V D S =0 , V GS =2 0 V -- -- -100 nA 1 .0 2 .1 2 .5 V ON C H AR AC T E R IS T IC (n o te 1 ) G a t e Thr e s ho l d Vo l t a g e V GS ( t h ) V D S = V G S , ID = 2 5 0 u A S t a t i c D r a i n- S o ur c e O n- R e s i s i t a nc e R D S ( ON) V G S = 1 0 V , ID = 5 0 0 m A , T J = 2 5 O C -- 3 .7 2 .5 Ω D r a i n- S o ur c e O n- Vo l t a g e V D S ( ON) V G S = 1 0 V , ID = 5 0 0 m A V G S = 5 V , ID = 5 0 m A -- -- 3 .7 5 1 .5 V O n- S t a t e D r a i n C ur r e nt F o r w a r d Tr a n s c o n d u c t a n c e ID ( ON) V G S = 1 0 V , V D S > 2 V D S ( ON) 500 -- -- mA GFS V D S > 2 V D S ( ON) , I D = 2 0 0 m A 80 -- -- mS -- -- 50 pF -- -- 25 pF -- -- 5 pF -- -- 20 ns -- -- 20 ns D YN AM IC C H AR AC T E R IS T IC S In p u t C a p a c i t a n c e G IS S O ut p ut C a p a c i t a nc e G OS S R e v e r s e Tr a n s f e r C a p a c i t a n c e G RS S Tu r n - O n Ti m e T ON Tu r n - O f f Ti m e T OF F STAD-DEC.07.2005 V D S =2 5 V, V GS =0 V, f=1 .0 MHz V D D = 3 0 V , R L = 2 5 Ω , ID = 5 0 0 m A V GS = 1 0 V, RGE N= 2 5 Ω PAGE . 2 2N7002W 2.0 o T A = 25 C 1.8 1.6 V GS =10V 9V 1.4 1.2 1.0 8V 7V 0.8 6V 5V 0.6 0.4 0.2 0 4V 3V 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 V DS, DRAIN SOURCE VOLTAGE(VOLTS) I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) ELECTRICAL CHARACTERISTICS CURVE 1.0 V DS =10V 0.4 0.2 V GS =10V I D =200mA 1.6 1.4 1.2 1.0 0.8 0.6 -20 +20 +60 +100 o T,TEMPERATURE( C) F i g u r e 3 . Te m p e r a t u r e v e r s u s St a t i c Drain-Source On-Resistance STAD-DEC.07.2005 +140 V GS(th) ,THRESHOLD VOLTAGE (NORMALIZED) r DS(on) ,STATIC DRAIN-SOURCE ON-RESISTANCE(NORMALIZED) 2.2 0.4 -60 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 V GS, GATE SOURCE VOLTAGE(VOLTS) Fig. 9 Z-Current vs. Z-Voltage 2.4 1.8 125 oC 0.6 Figure 1. Ohmic Region 2.0 o 25 C -55 oC 0.8 1.2 1.05 1.1 V DS =V GS I D =1.0mA 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 +100 +140 o T,TEMPERATURE( C) Figure 4. Temperature versus Gate Threshold Voltage PAGE . 3 2N7002W MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.07.2005 PAGE . 4