Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC5346 Unit: mm 1.05 2.5±0.1 ±0.05 ● 1.0 1.0 0.65 max. 14.5±0.5 ● +0.1 0.45–0.05 2.5±0.5 * (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –50 mA * Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 1 W 150 ˚C –55~+150 ˚C 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) Symbol Conditions min Collector cutoff current ICBO VCB = –100V, IE = 0 Collector to emitter voltage VCEO IC = –0.1mA, IB = 0 Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 Forward current transfer ratio hFE*1 VCE = –5V, IC = –10mA 130 Collector to emitter saturation voltage VCE(sat) IC = –30mA, IB = –3mA VCE = –10V, IC = –1mA, GV = 80dB Noise voltage NV Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz FE 1:Emitter 2:Collector 3:Base MT2 Type Package (Ta=25˚C) Parameter *1h 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2.5±0.5 2 2.5±0.1 ■ Absolute Maximum Ratings +0.1 ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. 0.45–0.05 ● (1.45) 0.8 0.2 ■ Features 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 Rg = 100kΩ, Function = FLAT typ max Unit –1 µA –150 V V 330 150 –1 V 300 mV 200 MHz 5 pF Rank classification Rank R S hFE 130 ~ 220 185 ~ 330 1 Transistor 2SA1982 IC — VCE 1.6 1.2 0.8 0.4 Ta=25˚C –75 Collector current IC (mA) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. – 0.4mA – 0.3mA – 0.6mA – 0.5mA – 0.2mA IC/IB=10 –3 –1 – 0.3 – 0.7mA –45 –10 Ta=75˚C 25˚C – 0.1 –25˚C – 0.03 –30 – 0.1mA – 0.01 – 0.003 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 250 Ta=75˚C 25˚C –25˚C 100 50 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Collector output capacitance Cob (pF) 6 VCE=–5V 150 –8 –10 –12 Cob — VCB 300 200 –6 Collector to emitter voltage VCE (V) hFE — IC Forward current transfer ratio hFE IB=–1.0mA – 0.9mA – 0.8mA –60 –15 0 2 VCE(sat) — IC –90 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 2.0 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) – 0.001 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA)