NTE NTE2340

NTE2340
Silicon NPN Transistor
Darlington Power Amp, Switch
Features:
D 60V Zener Diode Built–In Between Collector and Base
D Very Small Fluctuation in Breakdown Voltages
D Large Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cut–Off Current
ICBO
VCB = 50V, IE = 0
–
–
100
µA
Emitter Cut–Off Current
IEBO
VEB = 7V, IC = 0
–
–
2
mA
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0
50
–
70
V
DC Current Gain
hFE (1)
VCE = 3V, IC = 4A
2000
–
5000
hFE (2)
VCE = 3V, IC = 8A
500
–
–
Collector–Emitter Saturation Voltage
VCE(sat) IC = 4A, IB = 8mA
–
–
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 8mA
–
–
2.0
V
Transition Frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
–
20
–
MHz
Turn–On Time
ton
–
0.5
–
µs
Storage Time
tstg
VCC = 50V, IB1 = –IB2 = 8mA,
IC = 4A
–
4.0
–
µs
–
1.0
–
µs
50
–
–
mJ
Fall Time
Energy Handling Capability
tf
Es/b
IC = 1A, L = 100mH,
RBE = 100Ω
C
B
E
.343 (8.72)
.148 (3.72)
.256 (6.5)
.059 (1.5)
.406
(10.3)
.043 (1.1)
.413
(10.5)
.032 (0.82)
.100 (2.54)
B
.020 (.508)
C
E
.043 (1.1)