NTE2920 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Isolated Central Mounting Hole D Fast Switching D +175°C Operating Temperature D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/°C Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24°C/W Note Note Note Note Note 1. 2. 3. 4. 5. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25°C, L = 92µH, RG = 25Ω, IAS = 90A ISD ≤ 90A, di/dt ≤ 200A/µs, VDD ≤ 60V, TJ ≤ +175°C Pules Width ≤ 300µs, Duty Cycle ≤ 2%. Current limited by the package, (Die Current = 90A). Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Drain–to–Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient ∆V(BR)DSS Reference to +25°C, ID = 1mA ∆TJ VGS = 0V, ID = 250µA Min Typ Max Unit 60 – – V – 0.056 – V/°C – – 0.014 Ω Static Drain–to–Source On–Resistance RDS(on) VGS = 10V, ID = 54A, Note 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V VDS = 25V, ID = 54A, Note4 25 – – mhos VDS = 60V, VGS = 0V – – 25 µA VDS = 48V, VGS = 0V, TJ = +150°C – – 250 µA Forward Transconductance Drain–to–Source Leakage Current gfs IDSS Gate–to–Source Forward Leakage IGSS VGS = 20V – – 100 nA Gate–to–Source Reverse Leakage IGSS VGS = –20V – – –100 nA ID = 64A, VDS = 48V, VGS = 10V, Note 4 – – 160 nC – – 48 nC – – 54 nC – 20 – ns – 160 – ns td(off) – 83 – ns tf – 150 – ns Between lead, .250in. (6.0) mm from package and center of die contact – 5.0 – nH – 13 – nH VGS = 0V, VDS = 25V, f = 1MHz – 4500 – pF Total Gate Charge Qg Gate–to–Source Charge Qgs Gate–to–Drain (“Miller”) Charge Qgd Turn–On Delay Time td(on) Rise Time tr Turn–Off Delay Time Fall Time VDD = 30V, ID = 64A, RG = 6.2Ω, RD = 0.45Ω, Ω Note 4 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss – 2000 – pF Reverse Transfer Capaticance Crss – 300 – pF Min Typ Max Unit Source–Drain Ratings and Characteristics: Parameter Symbol Test Conditions Continuous Source Current (Body Diode) IS Note 5 – – 70 A Pulsed Source Current (Body Diode) ISM Note 1 – – 360 A Diode Forward Voltage VSD TJ = +25°C, IS = 90A, VGS = 0V, Note 4 – – 2.5 V Reverse Recovery Time trr – 270 540 ns Reverse Recovery Charge Qrr TJ = +25°C, IF = 64A, di/dt = 100A/µs, Note 4 – 1.1 2.2 µC Forward Turn–On Time ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%. Note 5. Current limited by the package, (Die Current = 90A). .626 (15.9) Max .197 (5.0) .217 (5.5) See Note .787 (20.0) .143 (3.65) Dia Max .157 (4.0) .559 (14.2) Min .047 (1.2) .215 (5.45) G D .094 (2.4) S TO247 Note: Drain connected to metal part of mounting surface.