NUS2501W6 Integrated NPN Digital Transistor with Switching Diode Array This new option of integrated devices is designed to replace a discrete solution of a single transistor with three switching diodes. BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT technology eliminates these individual components by integrating them into a single device, therefore integration of a single BRT with three switching diodes results in a significant reduction of both system cost and board space. This new device is offered in the SC−88 surface mount package. http://onsemi.com 1 6 2 5 R2 R1 Features • Single SC−88 Surface Mount Package • Moisture Sensitivity Level 1 4 3 Benefits • Integration of Six Discrete Components • Integrated Solution Offers Cost and Space Savings • Integrated Solution Improves System Reliability MARKING DIAGRAM 6 Applications • • • • Wireless Phones Handheld Products Notebook Computers LCD Display Panels 1 Symbol Value Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Diode Reverse Voltage VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc Diode Peak Reverse Voltage Diode Forward Current Diode Peak Forward Current Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. P1 LGd 1 LG = Specific Device Code d = Date Code MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Rating SC−88 (SOT−363) CASE 419B 6 ORDERING INFORMATION Device NUS2501W6T1 Package SC−88 Shipping† 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NUS2501W6/D NUS2501W6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Symbol Test Conditions Min Typ Max Unit Collector−Base Cutoff Current ICBO VCB = 50 V, IE = 0 − − 100 nAdc Collector−Emitter Cutoff Current ICEO VCE = 50 V, IB = 0 − − 500 nAdc Emitter−Base Cutoff Current IEBO VEB = 6.0 V, IC = 0 − − 0.1 mAdc Collector−Base Breakdown Voltage V(BR)CBO IC = 10 A, IE = 0 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 1) V(BR)CEO IC = 2.0 mA, IB = 0 50 − − Vdc V(BR) IR = 100 A 80 − − Vdc IR VR = 70 V − − 0.1 Adc Characteristic OFF CHARACTERISTICS Diode Reverse Breakdown Voltage Diode Reverse Voltage Leakage Current Diode Forward Voltage VF IF = 100 mA − − 1.2 Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − − 3.5 pF hFE VCE = 10 V, IC = 5.0 mA 80 140 − − VCE(sat) IC = 10 mA, IB = 0.3 mA − − 0.25 Vdc Output Voltage(on) VOL VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k − − 0.2 Vdc Output Voltage(off) VOH VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k 4.9 − − Vdc Input Resistor R1 − 32.9 − 61.1 k Resistor Ratio R1/R2 − 0.8 1.0 1.2 − ON CHARACTERISTICS (Note 1) DC Current Gain Collector−Emitter Saturation Voltage 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2%. http://onsemi.com 2 NUS2501W6 10 1000 IC/IB = 10 1 25°C TA=−25°C 0.01 0 25°C −25°C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 100 75°C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL TRANSISTOR ELECTRICAL CHARACTERISTICS 10 IC, COLLECTOR CURRENT (mA) 1 Figure 1. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) VO = 5 V 0.001 50 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 4. Output Current versus Input Voltage Figure 3. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 2. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 5. Input Voltage versus Output Current http://onsemi.com 3 50 10 NUS2501W6 TYPICAL DIODE ELECTRICAL CHARACTERISTICS 10 IR , REVERSE CURRENT (µA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 6. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance http://onsemi.com 4 8 50 NUS2501W6 PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 M N J C H K SOLDER FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For information on soldering specifications, please refer to our Soldering Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NUS2501W6 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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