Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zDimensions (Unit : mm) 2SB1412 zStructure Epitaxial planar type PNP silicon transistor ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ∗ Denotes h FE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −30 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V Collector current IC Collector power 2SB1412 dissipation PC −5 A(DC) −10 A(Pulse) 1 10 W W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C ∗1 ∗1 Single pulse, Pw=10ms zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO −30 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −20 − − V IC= −1mA Collector-base breakdown voltage BVEBO −6 − − V IE= −50µA Collector cutoff current ICBO − − −0.5 µA VCB= −20V Emitter cutoff current IEBO − − −0.5 µA VEB= −5V VCE(sat) − 0.35 −1.0 V IC/IB= −4A/ −0.1A hFE 82 − 390 − VCE= −2V, IC= −0.5A fT − 120 − MHz Cob − 60 − pF Emitter-base breakdown voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ ∗ VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz ∗ Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.C 2SB1412 Data Sheet zPackaging specifications and hFE Taping Package Code TL Basic ordering unit (pieces) Type hFE 2SB1412 PQR 2500 hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 zElectrical characteristic curves −200m −100m −50m −20m −10m −5m −2m −1m 0 −0.2 DC CURRENT GAIN : hFE 1k 500 200 Ta=100°C 25°C −25°C 20 −0.8 −1.2 −1.6 50 VCE= −2V 5 −5 −10 Ta=100°C 25°C −25°C 20 10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) lC/lB=10 −2 −1 −0.5 −0.2 −0.1 Ta=100°C −0.05 25°C −25°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −5 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ −5 −10 −1 Ta=100°C 25°C −0.2 −0.1 −0.05 −25°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.8 Collector-emitter saturation voltage vs. collector current ( 2/3 DC current gain vs. collector current ( ) −5 Ta=25°C −2 −1 −0.5 −0.2 −0.1 IC/IB=50/1 40/1 /1 30/1 10/1 −0.05 −0.02 −0.01 −2m −5m −0.0− -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 Fig.6 lC/lB=30 −0.5 −5 −10 COLLECTOR CURRENT : IC (A) −5 −10 COLLECTOR CURRENT : IC (A) −2 COLLECTOR CURRENT : IC (A) Collector-emitter saturation voltage vs. collector current ( ) 20 Fig.3 200 5 −5 50 Grounded emitter output characteristics 1k 100 −2V −1V 100 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −2.0 500 10 Fig.7 −0.4 VCE= −5V 200 10 IB=0A 2k COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE −1 5k VCE= −1V −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −5mA Fig.2 2k 50 −2 Grounded emitter propagation characteristics 5k 100 −10mA 1k 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 −3 0 Ta=25°C 2k −15mA 0 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 5k Ta=25°C mA −30 A −25m −20mA DC CURRENT GAIN : hFE Ta=100°C 25°C −25°C −5 −50mA −45mA −40mA −4 −35mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) −2 −1 −500m COLLECTOR CURRENT : IC (A) VCE= −2V −5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −10 Collector-emitter saturation voltage vs. collector current ( ) −5 lC/lB=40 −2 −25°C −1 25°C −0.5 −0.2 −0.1 −0.05 Ta=100°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) ) Fig.9 Collector-emitter saturation voltage vs. collector current ( ) 2009.12 - Rev.C 1 000 lC/lB=50 −25°C 25°C Ta=100°C −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 200 100 50 20 10 5 2 1 1 COLLECTOR CURRENT : IC (A) EMITTER TO BASE VOLTAGE : VEB (V) Fig.13 Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR CURRENT : IC (A) 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.12 Collector output capacitance vs. collector-base voltage ∗ 20 10 5 2 1 500m DC s −10 50 s −5 100 Ta=25°C Single nonrepetitive pulse 50 0m −2 100 200 0m 20 −1 500 1000 Fig.11 Gain bandwidth product vs. emitter current 10 50 −0.5 50 100 200 Ta=25°C f=1MHz IE=0A 500 =1 100 −0.2 20 10 = Pw 200 10 −0.1 5 1000 Pw EMITTER INTPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IC=0A 500 2 EMITTER CURRENT : IE (mA) Fig.10 Collector-emitter saturation voltage vs. collector current ( ) 1000 Ta=25°C VCE= −6V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) −5 Data Sheet TRANSEITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2SB1412 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : −VCE (V) Fig.14 Safe operation area F(2SB1412) 3/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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