INTEGRATED CIRCUITS DATA SHEET OM5926HN I2C-bus SIM card interface Product specification 2003 Feb 19 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 QUICK REFERENCE DATA 6 BLOCK DIAGRAM 7 PINNING INFORMATION 7.1 7.2 Pinning Pin description 8 FUNCTIONAL DESCRIPTION 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 I2C-bus control Power supply DC-to-DC converter Power-down mode Off mode Sequencer and clock counter Clock circuitry Protection I/O circuitry 9 LIMITING VALUES 10 HANDLING 11 THERMAL CHARACTERISTICS 12 CHARACTERISTICS 13 APPLICATION INFORMATION 14 PACKAGE OUTLINE 15 SOLDERING 15.1 Introduction to soldering surface mount packages Reflow soldering Wave soldering Manual soldering Suitability of surface mount IC packages for wave and reflow soldering methods 15.2 15.3 15.4 15.5 16 DATA SHEET STATUS 17 DEFINITIONS 18 DISCLAIMERS 19 PURCHASE OF PHILIPS I2C COMPONENTS 2003 Feb 19 2 Philips Semiconductors Product specification I2C-bus SIM card interface 1 OM5926HN FEATURES • Subscriber Identification Module (SIM) card interface in accordance with GSM11.11, GSM11.12 (Global System for Mobile communication) and ISO 7816 requirements • VCC regulation (3 or 5 V ±8%) with controlled rise and fall times • Off mode with 5 µA current • One protected and buffered pseudo-bidirectional I/O line (I/O referenced to VCC and SIMI/O referenced to VDDI) • Control from a microcontroller via a 400 kHz slave I2C-bus (address 48H) • Clock generation (up to 10 MHz) with synchronous start and frequency quadrupling • Interface signals supplied by an independent voltage (1.5 ≤ VDDI ≤ 6 V). • Clock stop LOW, clock stop HIGH or 1.25 MHz (from internal oscillator) for cards Power-down mode 2 APPLICATIONS • Automatic activation and deactivation sequences of an independent sequencer • GSM mobile phones. • Automatic processing of pin RST with the counting of the 41928 CLK cycles for the beginning of the Answer-To-Reset (ATR) 3 GENERAL DESCRIPTION The OM5926HN is a low cost one chip SIM interface, in accordance with GSM11.11, GSM11.12 with card current limitation. Controlled by the I2C-bus, it is optimized in terms of board space, external components count and connection count (see Chapter 13). • Warm reset command • Supply voltage supervisor for power-on reset, spike killing and emergency deactivation in case of supply drop-out • DC-to-DC converter (doubler, tripler or follower) allowing operation in a 3 or 5 V environment (2.5 ≤ VDD ≤ 6 V) Due to the integrated DC-to-DC converter, the device ensures full cross-compatibility between 3 or 5 V cards and 3 or 5 V environments. The very low power consumption in Power-down mode and Off mode saves battery power. • Enhanced Electrostatic Discharge (ESD) protection on card side (6 kV minimum) • Power-down mode with several active features and current reduction 4 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME OM5926HN HVQFN20 2003 Feb 19 DESCRIPTION plastic, heatsink very thin quad flat package; no leads; 20 terminals; body 5 × 5 × 0.85 mm 3 VERSION SOT662-1 Philips Semiconductors Product specification I2C-bus SIM card interface 5 OM5926HN QUICK REFERENCE DATA SYMBOL PARAMETER VDD supply voltage on pins VDDS and VDDP IDD supply current on pins VDDS and VDDP VDDI interface signal supply voltage VCC card supply voltage CONDITIONS MIN. TYP. MAX. UNIT 2.5 − 6 V Off mode; VDD = 3 V − − 5 µA Power-down mode; VDD = 3V; VCC = 5 V; ICC = 100 µA; SIMCLK connected to PGND or VDDI; CLK is stopped − − 500 µA active mode; VDD = 3 V; VCC = 3 V; ICC = 6 mA; fCLK = 3.25 MHz − − 18 mA active mode; VDD = 3 V; VCC = 5 V; ICC = 10 mA; fCLK = 3.25 MHz − − 50 mA active mode; VDD = 5 V; VCC = 3 V; ICC = 6 mA; fCLK = 3.25 MHz − − 10 mA active mode; VDD = 5 V; VCC = 5 V; ICC = 10 mA; fCLK = 3.25 MHz − − 30 mA 1.5 − 6 V 5 V card; active mode; 0 < ICC < 15 mA; 40 nAs dynamic load on 200 nF capacitor 4.6 5 5.4 V 3 V card; active mode; 0 < ICC < 10 mA; 24 nAs dynamic load on 200 nF capacitor 2.75 3 3.25 V 5 V card; PDOWN = 1; ICC < 5 mA 4.6 − 5.4 V 3 V card; PDOWN = 1; ICC < 5 mA 2.75 − 3.25 V CL(max) = 200 nF 0.05 − 0.25 V/µs SR slew rate on VCC (rise and fall) tde deactivation time − − 120 µs tact activation time − − 150 µs fi(SIMCLK) clock input frequency 0 − 20 MHz Tamb operating ambient temperature −40 − +85 °C 2003 Feb 19 4 Philips Semiconductors Product specification I2C-bus SIM card interface 6 OM5926HN BLOCK DIAGRAM VDDS VDDP handbook, full pagewidth 100 nF 100 nF S3 S4 S1 S2 5 7 3 8 2.2 µF 100 nF 6 15 VUP 9 SIMMERRN OM5926HN SUPPLY SUPERVISOR DC/DC CONVERTER 16 DEL 10 nF PGND 4 18 13 VCC SEQUENCER VDDI 200 nF RST SAD0 SAD1 14 I 2C-BUS AND REGISTERS OSCILLATOR I/O 10 ANALOG DRIVERS AND PROTECTIONS 19 20 2 17 CLOCK COUNTER PRES CLK CLOCK CIRCUITRY 12 1 MGU806 Fig.1 Block diagram. 2003 Feb 19 5 SCL PWROFF SIMI/O 20 kΩ pull-up to VDDI 11 SGND SDA SIMCLK Philips Semiconductors Product specification I2C-bus SIM card interface 7 7.1 OM5926HN PINNING INFORMATION 7.2 Pinning Pin description Table 1 HVQFN20 package S4 S2 VUP 7 8 9 10 I/O VDDP handbook, halfpage 6 SYMBOL PIN S3 5 11 SGND PGND 4 12 CLK S1 3 PWROFF 2 14 RST SIMCLK 1 15 VDDS 13 VCC DEL 16 SIMI/O 17 SDA 19 VDDI 18 SCL 20 OM5926HN 2003 Feb 19 SIMCLK 1 external clock input PWROFF 2 control input for entering the Off mode (active LOW) S1 3 capacitor connection for the DC-to-DC converter (between S1 and S2) PGND 4 power ground S3 5 capacitor connection for the DC-to-DC converter (between S3 and S4) VDDP 6 power supply voltage S4 7 capacitor connection for the DC-to-DC converter (between S3 and S4) S2 8 capacitor connection for the DC-to-DC converter (between S1 and S2) VUP 9 DC-to-DC converter output (must be decoupled with a 100 nF capacitor to ground) I/O 10 input/output to and from the card reader (C7) SGND 11 signal ground CLK 12 clock output to the card reader (C3) MGU807 Fig.2 Pin configuration (bottom view). 6 DESCRIPTION VCC 13 supply voltage to the card reader (C1) RST 14 reset output to the card reader (C2) VDDS 15 signal supply voltage DEL 16 external capacitor connection for the delay on the voltage supervisor SIMI/O 17 input/output to and from the microcontroller (internal 20 kΩ pull-up resistor connected to VDDI) VDDI 18 supply voltage for the interface signals with the system SDA 19 I2C-bus serial data input/output SCL 20 I2C-bus serial clock input Philips Semiconductors Product specification I2C-bus SIM card interface 8 OM5926HN • To request the card status (hardware problem occurred, unresponsive card after activation, supply drop-out detected by the voltage supervisor, card powered or not) FUNCTIONAL DESCRIPTION The block diagram of the OM5926HN is shown in Fig.1. The functional blocks will be described in the following sections. It is assumed that the reader of this specification is familiar with GSM11.11 and ISO 7816 terminology. • To configure the SIMI/O and I/O pins in the high-impedance state. 8.1.1 I2C-bus control 8.1 STRUCTURE OF THE I2C-BUS DATA FRAMES • Commands to the OM5926HN: The I2C-bus is used: • To configure the clock to the card in active mode (1⁄4fSIMCLK and fSIMCLK) – START/ADDRESS/WRITE • To configure the clock to the card in power reduction mode (stop LOW, stop HIGH or ±1.25 MHz derived from the internal oscillator) – STOP. – COMMAND BYTE The fixed address is 0100100. The command bits are described in Table 2. Commands are executed on the rising edge of the 9th SCL pulse of the command byte. • For selecting operation with a 3 or 5 V card • For starting or stopping sessions (cold reset) • Status from the OM5926HN (see Table 4). The fixed address is 0100100. • For initiating a warm reset • For entering or leaving the Power-down mode Table 2 Description of the command bits; note 1 BIT SYMBOL 0 DESCRIPTION START/STOP Logic 1 initiates an activation sequence and a cold reset procedure. Logic 0 initiates a deactivation sequence. 1 WARM Logic 1 initiates a warm reset procedure. It will be automatically reset by hardware when the card starts answering, or when the 2 times 41928 CLK pulses have expired without answer from the card. 2 3 V/5 VN Logic 1 sets the card supply voltage VCC to 3 V. Logic 0 sets the card supply voltage VCC to 5 V. 3 PDOWN Logic 1 applies on the CLK pin the frequency defined by bits CLKPD1 and CLKPD2, and enters a reduced current consumption mode. Logic 0 sets the circuit back to normal mode. 4 CLKPD1 These 2 bits determine the clock to the card at Power-down as shown in Table 3. 5 CLKPD2 6 DT/DFN 7 I/OEN Logic 0 sets fCLK to 1⁄4fSIMCLK (in active mode). Logic 1 sets fCLK to fSIMCLK. Logic 1 will transfer I/O to SIMI/O. Logic 0 sets I/O and SIMI/O to the high-impedance state. Note 1. All bits are cleared at reset. Table 3 Clock selection to the card at power-down CLKPD2 CLKPD1 0 0 clock stop LOW 0 1 clock is 1⁄2fosc 1 0 clock stop HIGH 1 1 don’t use 2003 Feb 19 FUNCTION 7 Philips Semiconductors Product specification I2C-bus SIM card interface Table 4 OM5926HN Description of the status bits; note 1 BIT SYMBOL DESCRIPTION 0 − Bit 0 is not used and is fixed to logic 1. 1 − Bit 1 is not used and is fixed to logic 0. 2 − Bit 2 is not used and is fixed to logic 0. 3 SUPL 4 − 5 MUTE Logic 1 when a card has not answered after 2 times 41928 CLK cycles. Logic 0 when the status is read-out. 6 EARLY Logic 1 when a card has answered between 200 and 352 CLK cycles. Logic 0 when the status is read-out. 7 ACTIVE Logic 1 when the card is power-on. Logic 0 when the card is power-off. Logic 1 when the voltage supervisor has signalled a fault. Logic 0 when the status is read-out. Bit 4 is not used and is fixed to logic 0. Note 1. In the event of supply drop-out during a session, the card will be automatically deactivated, bit START = 0 and the corresponding status bit = 1. The status bit will be logic 0 when the microcontroller reads out the status register, on the 7th SCL pulse. After a supply drop-out, bit SUPL = 1. 8.2 Power supply The voltage supervisor (see Fig.3) senses VDDS and generates an alarm pulse when VDD is too low to ensure proper operation. The alarm pulse width (tW) is defined by an external capacitor connected to pin DEL (1 ms per 1 nF typical). The circuit operates within a supply voltage range of 2.5 to 6 V. The supply pins are VDDS and SGND. Pins VDDP and PGND only supply the DC-to-DC converter for the analog drivers to the card and must be decoupled externally because of the large current spikes that the card and the DC-to-DC converter can create. An integrated spike killer ensures the card contacts remain inactive during power-up or power-down. An internal voltage reference is generated which is used for the DC-to-DC converter, the voltage supervisor and the VCC generator. During the alarm pulse, the I2C-bus is unresponsive but will become operational at the end of the alarm pulse. Bit SUPL is set as long as the status has not been read. The alarm pulse will also block any spurious signals on the card contacts during microcontroller reset, and will force an automatic deactivation of the contacts in the event of supply drop-out. All interface signals with the microcontroller (PWROFF, SIMCLK, SCL, SDA and SIMI/O) are referenced to a separate supply pin VDDI, which may be different from VDD (1.5 ≤ VDDI ≤ 6 V). If a supply drop-out occurs during a session, the START bit is cleared and an automatic deactivation is initiated. The pull-up resistors on bus lines SDA and SCL may be referenced to a voltage higher than VDDI. This allows the use of peripherals which do not operate at VDDI. 2003 Feb 19 8 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN handbook, full pagewidth VDDS DEL tW tW SIMERR (internal signal) status read after event I2C-bus unresponsive I2C-bus OK I2C-bus unresponsive I2C-bus OK I2C-bus unresponsive MGR436 Fig.3 Voltage supervisor. 8.3 DC-to-DC converter The recognition of the supply voltage is done by the OM5926HN at approximately 3.3 V. The whole circuit is powered by VDDS, except for the VCC generator, the other card contact buffers and the interface signals. When a card session is requested by the microcontroller, the sequencer will first start the DC-to-DC converter, which is a switched capacitors type, clocked by an internal oscillator at a frequency fosc of approximately 2.5 MHz. The output voltage VVUP is regulated at approximately 4.5 or 6.5 V and subsequently fed to the VCC generator. VCC and PGND are used as a reference for all other card contacts. The DC-to-DC converter acts as a doubler or a tripler, depending on the supply voltage VDD and the card supply voltage VCC. There are basically four possible situations: • VDD = 3 V and VCC = 3 V; the DC-to-DC converter acts as a doubler with a regulation of VVUP at approximately 4.5 V • VDD = 3 V and VCC = 5 V; the DC-to-DC converter acts as a tripler with a regulation of VVUP at approximately 6.5 V • VDD = 5 V and VCC = 3 V; the DC-to-DC converter is disabled and VDD is applied to pin VUP • VDD = 5 V and VCC = 5 V; the DC-to-DC converter acts as a doubler with a regulation of VVUP at approximately 6.5 V. 2003 Feb 19 9 Philips Semiconductors Product specification I2C-bus SIM card interface 8.4 OM5926HN After 41928 CLK pulses, if no start bit on I/O has been detected, the sequencer toggles RST to HIGH and counts another 41928 CLK pulses. If, again, no start bit has been detected, the MUTE bit is set in the Status register. Power-down mode The Power-down mode is used for current consumption reduction when the card is in sleep mode. For entering the Power-down mode, the microcontroller must first select the state of CLK (stop LOW, stop HIGH or 1.25 MHz from the internal oscillator) using the CLKPD1 and CLKPD2 bits. Subsequently, the microcontroller sends the command PDOWN, CLK is switched to the value predefined by the CLKPD1 and CLKPD2 bits, and SIMCLK may be stopped (HIGH or LOW). If a start bit has been detected during the two 41928 CLK pulses slots, the clock counter is stopped, RST is kept at the same level and the session can go on between the card and the system. The clock counter ignores any start bit during the first 200 CLK pulses of both slots. If a start bit is detected between 200 and 352 CLK pulses of both slots, then the EARLY bit is set in the Status register. If the selected CLK is stopped, the biasing currents in the buffers to the card will be reduced. The voltage supervisor and all control functions remain active. The maximum current taken by the card when CLK is stopped should be less than 5 mA. The deactivation is initiated either by the microcontroller (STOP command), or automatically by the OM5926HN in the event of a short-circuit or supply voltage drop-out detected by the voltage supervisor. During deactivation, RST will go LOW, CLK is stopped, I/O is disabled and VCC goes LOW. Before leaving the Power-down mode, the clock signal must first be applied to SIMCLK, then the PDOWN bit must be set to logic 0. 8.5 8.7 Off mode The clock to the card is either derived from the SIMCLK pin (2 to 20 MHz) or from the internal oscillator. The Off mode is entered when the PWROFF signal is LOW. In this mode, no function is valid. This mode avoids switching off the power supply of the device, and gives a current consumption less than 5 µA. Before entering the Off mode, the card must be deactivated. During a card session, fCLK may be chosen to be 1⁄4fSIMCLK or fSIMCLK depending on the state of the DT/DFN bit. For the card Sleep mode, CLK may be chosen stop LOW, stop HIGH or 1⁄2fosc (1.25 MHz) with bits CLKPD1 and CLKPD2. This predefined value will be applied to CLK when the PDOWN bit is set to logic 1. The Off mode is left when the PWROFF signal returns to HIGH. This re-initializes the voltage supervisor, and has the same effect as a reset of the device. 8.6 The first CLK pulse has the correct width, and all frequency changes are synchronous, ensuring that no pulse is smaller than 45% of the shortest period. Sequencer and clock counter The sequencer handles the activation and deactivation sequences in accordance with GSM11.11 and ISO 7816, even in the event of an emergency (card take-out, short-circuit and supply drop-out). The sequencer is clocked with the internal oscillator frequency (fosc). The duty cycle is within 45 and 55% in the stable state, the rise and fall times are less than 8% of the period and precautions must be taken to ensure that there is no overshoot or undershoot. The activation is initiated with the START command (only if the card is present, and if the voltage supervisor does not detect a fault on the supply). During activation, VCC goes HIGH and subsequently I/O is enabled and CLK is started with RST = LOW. The clock counter counts the CLK pulses until a start bit is detected on I/O. 2003 Feb 19 Clock circuitry 10 Philips Semiconductors Product specification I2C-bus SIM card interface 8.7.1 OM5926HN If a start bit is detected on I/O and the clock counter is stopped with RST = HIGH, the card session may continue. If not, the MUTE bit is set in the Status register. The microcontroller may initiate a deactivation sequence by setting the START bit to logic 0. ACTIVATION SEQUENCE Figure 4 shows the activation sequence. When the card is inactive, VCC, CLK, RST and I/O are LOW, with low-impedance with respect to ground. The DC-to-DC converter is stopped. SIMI/O is pulled HIGH at VDDI via the 20 kΩ pull-up resistor. When all conditions are met (supply voltage, card present, no hardware problems), the microcontroller may initiate an activation sequence by setting the START bit to logic 1 (t0) via the I2C-bus: If a start bit is detected during the first 200 CLK pulses of each count slot, then it will not be taken into account. If a start bit is detected during 200 and 352 CLK pulses of each slot, then bit EARLY is set in the status register. The microcontroller may initiate a deactivation sequence by setting the START bit to logic 0. 1. The DC-to-DC converter is started (t1). 2. VCC starts rising from 0 to 3 V or 0 to 5 V, according to the state of the 3 V/5 VN control bit, with a controlled rise time of 0.17 V/µs typically (t2). The sequencer is clocked by 1⁄64fosc which leads to a time interval T of 25 µs typically. Thus t1 = 0 to 1⁄2 T; t2 = t1 + 3⁄2 T; t3 = t1 + 7⁄2 T; t4 = t1 + 4 T and t5 depends on the SIMCLK frequency. 3. I/O buffer is enabled in reception mode (t3). 4. CLK is sent to the card reader with RST = LOW, and the count of 41928 CLK pulses is started (t4 = tact). 5. If a start bit is detected on I/O, the clock counter is stopped with RST = LOW. If not, RST = HIGH, and a new count of 41928 CLK pulses is started (t5). handbook, full pagewidth START VCC , I/O CLK , RST SIMI/O MGR437 t0, t1 t2 t3 t4 (= tact) t5 the 200 first CLK pulses are masked Fig.4 Activation sequence. 2003 Feb 19 11 Answer To Reset (ATR) begin Philips Semiconductors Product specification I2C-bus SIM card interface 8.7.2 OM5926HN DEACTIVATION SEQUENCE Figure 5 shows the deactivation sequence. When the session is completed, the microcontroller sets the START bit to logic 0. The circuit will then execute an automatic deactivation sequence: 1. Card reset, RST goes LOW (t10). 2. CLK is stopped (t11). 3. I/O goes LOW (t12). 4. VCC falls to 0 V with typically 0.17 V/µs slew rate (t13). The deactivation is completed when VCC reaches 0.4 V (tde). 5. The DC-to-DC converter is stopped and CLK, RST, VCC and I/O become low-impedance with respect to PGND (t14). t10 < 1⁄64 T; t11 = t10 + 1⁄2 T; t12 = t10 + T; t13 = t12 + 5 µs and t14 = t10 + 4 T. handbook, full pagewidth START RST CLK I/O VCC MGR438 t10 t13 t11 tde t14 t12 Fig.5 Deactivation sequence. 2003 Feb 19 12 Philips Semiconductors Product specification I2C-bus SIM card interface 8.8 OM5926HN Protection Two hardware fault conditions are monitored by the circuit: • Short-circuits between VCC and other contacts • Supply drop-out. When one of these problems is detected during a card session, the security logic block initiates an automatic deactivation of the contacts (see Fig.6). handbook, full pagewidth START status readout SIMERR (internal signal) RST CLK I/O VCC MGR439 Fig.6 Emergency deactivation. 8.9 I/O circuitry The Idle state is realized by both I/O and SIMI/O being pulled HIGH (via a 10 kΩ pull-up resistor from I/O to VCC and via a 20 kΩ pull-up resistor from SIMI/O to VDDI). I/O is referenced to VCC and SIMI/O to VDDI, thus allowing operation with VCC ≠ VDD ≠ VDDI. When configuration bit I/OEN is logic 0, then I/O and SIMI/O are independent. When bit I/OEN is logic 1, then the data transmission between I/O and SIMI/O is enabled. The first side on which a falling edge occurs becomes the master. An anti-latch circuit disables the detection of falling edges on the other side, which becomes a slave. After a delay time (td) of <500 ns on the falling edge, the N transistor on the slave side is turned on, thus transmitting the logic 0 present on the master side. When the master goes back to logic 1, the P transistor on the slave side is turned on during td, and then both sides return to their Idle states. The maximum frequency on these lines is 1 MHz. 2003 Feb 19 13 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN 9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDDP power supply voltage −0.5 +6.5 V VDDS signal supply voltage −0.5 +6.5 V VDDI interface signal supply voltage −0.5 +6.5 V Vi(n) input voltage pins 1, 2 and 17 −0.5 +6.5 V pin 16 −0.5 VDDS + 0.5 V pins 19 and 20 −0.5 +6.5 V pins 10, 12 and 14 −0.5 VCC + 0.5 V pin 13 −0.5 +6.5 V pin 9 −0.5 +7.5 V pins 3, 5, 7 and 8 −0.5 VVUP + 0.5 V − 230 mW Ptot continuous total power dissipation Tamb = −40 to +85 °C Tj operating junction temperature − 125 °C Tstg IC storage temperature −55 +150 °C Vesd(n) electrostatic discharge voltage on pins 10, 12, 13 and 14 −6 +6 kV on any other pin −2 +2 kV 10 HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handle Metal Oxide Semiconductor (MOS) devices. 11 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) 2003 Feb 19 PARAMETER CONDITIONS thermal resistance from junction to ambient in free air 14 VALUE UNIT 35 K/W Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN 12 CHARACTERISTICS VDD = 3 V; VDDI = 1.5 V; fSIMCLK = 13 MHz; fCLK = 3.25 MHz; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VDD supply voltage on pins VDDS and VDDP IDD supply current on pins VDDS and VDDP VDDI interface signal supply voltage IDDI interface signals supply current 2.5 − 6.0 V Off mode − − 5 µA inactive mode − − 50 µA Power-down mode; VCC = 5 V; ICC = 100 µA; SIMCLK connected to SGND or VDDI; CLK is stopped − − 500 µA active mode; VCC = 3 V; ICC = 6 mA − − 18 mA active mode; VCC = 5 V; ICC = 10 mA − − 50 mA active mode; VDD = 5 V; VCC = 3 V; ICC = 6 mA − − 10 mA active mode; VDD = 5 V; VCC = 5 V; ICC = 10 mA − − 30 mA 1.5 − 6 V SIMCLK connected to PGND or VDDI − − 3 µA fSIMCLK = 13 MHz; VDDI = 1.5 V − − 120 µA fSIMCLK = 13 MHz; VDDI = 6 V − − 1.2 mA falling edge 2 − 2.3 V Vth(VDD) threshold voltage on VDD Vhys(VDD) hysteresis voltage on VDD 40 − 200 mV Vth(DEL) threshold voltage on pin DEL − 1.38 − V VDEL voltage on pin DEL − − VDD V Ich(DEL) charge current on pin DEL −0.5 −1 −2.5 µA Idch(DEL) discharge current on pin DEL VDEL = VDD 0.5 − − mA tW alarm pulse width CDEL = 10 nF 15 − 25 ms Pin SIMCLK fi(SIMCLK) clock input frequency 0 − 20 MHz tf fall time − − 1 µs tr rise time − − 1 µs VIL LOW-level input voltage 0 − 0.3VDDI V VIH HIGH-level input voltage 0.7VDDI − VDDI + 0.3 V IL leakage current − − ±3 µA 1 − 1.6 MHz 5 V card − 6.0 − V 3 V card − 4.5 − V DC-to-DC converter 1⁄ 2fosc VVUP oscillator frequency voltage on pin VUP 2003 Feb 19 15 Philips Semiconductors Product specification I2C-bus SIM card interface SYMBOL PARAMETER OM5926HN CONDITIONS MIN. TYP. MAX. UNIT Pin SDA (open-drain) VIL LOW-level input voltage −0.3 − +0.3VDDI V VIH HIGH-level input voltage 0.7VDDI − 6 V ILH HIGH-level leakage current − − 1 µA IIL LOW-level input current depends on the pull-up resistor − − − µA VOL LOW-level output voltage IOL = 3 mA − − 0.3 V Pin SCL (open-drain) VIL LOW-level input voltage −0.3 − +0.3VDDI V VIH HIGH-level input voltage 0.7VDDI − 6 V ILI input leakage current − − 1 µA 0 − 0.3VDDI V Pin PWROFF VIL LOW-level input voltage VIH HIGH-level input voltage 0.7VDDI − VDDI + 0.3 V ILI input leakage current − − ±1 µA Pin RST VO output voltage inactive mode; IO = 1 mA −0.3 − +0.3 V IO output current inactive mode; pin RST grounded − − −1 mA VOL LOW-level output voltage IOL = 200 µA −0.2 − +0.3 V VOH HIGH-level output voltage IOH < −200 µA VCC − 0.5 − VCC + 0.2 V tf fall time CL = 30 pF − − 0.5 µs tr rise time CL = 30 pF − − 0.5 µs VO output voltage inactive mode; IO = 1 mA −0.3 − +0.3 V IO output current inactive mode; pin CLK grounded − − −1 mA V Pin CLK VOL LOW-level output voltage IOL = 200 µA −0.2 − +0.3 VOH HIGH-level output voltage IOH = −200 µA VCC − 0.5 − VCC + 0.2 V tf fall time CL = 30 pF − − 8 tr rise time CL = 30 pF − − 8 ns fclk clock frequency 1 MHz power-down configuration 1 − 1.6 MHz regular activity 0 − 10 MHz CL = 30 pF 45 − 55 % inactive mode; IO = 1 mA − − 0.3 V active mode; 5 V card; no load 4.85 5.10 5.40 V active mode; 3 V card; no load 2.8 3.05 3.25 V 5 V card; PDOWN = 1; ICC < 5 mA 4.6 − 5.4 V 3 V card; PDOWN = 1; ICC < 5 mA 2.75 − 3.25 V δ duty factor ns Pin VCC (with 200 nF capacitor) VO output voltage 2003 Feb 19 16 Philips Semiconductors Product specification I2C-bus SIM card interface SYMBOL VO OM5926HN PARAMETER output voltage CONDITIONS SR output current TYP. MAX. UNIT active mode; 5 V card; with static load 4.60 − 5.40 V 3 V card; with static load 2.75 − 3.25 V 5 V card; 40 nAs pulses; note 1 4.60 − 5.40 V 2.75 − 3.25 V inactive mode; pin VCC grounded − − − mA VCC = 5V; VDD < 3.7 V − − 15 mA VCC = 5V; VDD > 3.7 V − − 20 mA VCC = 3 V; VDD < 3.7 V − − 10 mA VCC = 3 V; VDD > 3.7 V − − 15 mA 0.05 0.17 0.25 V/µs 3 V card; 12 nAs pulses; note 2 IO MIN. slew rate on VCC (rise and fall) CL(max) = 300 nF Pin I/O (internal pull-up resistor to VCC) VO output voltage inactive mode; IO = 1 mA − − 0.3 V IO output current inactive mode; pin I/O grounded − − −1 mA VOL LOW-level output voltage IOL = 1 mA −0.2 − +0.3 V VOH HIGH-level output voltage +25 µA< IOH < −25 µA 0.8VCC − VCC + 0.2 V VIL LOW-level input voltage −0.3 − +0.8 V VIH HIGH-level input voltage 1.5 − VCC + 0.3 V ILIH HIGH-level input leakage current − − 10 µA IIL LOW-level input current − − −600 µA tt(DI) data input transition time CL = 30 pF − − 1.2 µs tt(DO) data output transition time CL = 30 pF − − 0.5 µs td delay time on falling edge − − 500 ns Rpu(int) internal pull-up resistance between pins I/O and VCC 13 − 20 kΩ − +0.3 V Pin SIMI/O (internal pull-up resistor to VDDI) VOL LOW-level output voltage IOL = 1 mA −0.2 VOH HIGH-level output voltage with internal 20 kΩ pull-up resistor to VDDI; IO = 10 µA VDDI − 0.3 − VDDI + 0.2 V VIL LOW-level input voltage −0.3 − +0.3VDDI VIH HIGH-level input voltage 0.7VDDI − VDDI + 0.3 V ILIH HIGH-level input leakage current − − 10 µA IIL LOW-level input current with internal 20 kΩ pull-up resistor to VDDI; VI = 0 V − − – V DDI ---------------20 kΩ µA tt(DI) data input transition time CL = 30 pF − − 1.2 µs tt(DO) data output transition time CL = 30 pF − − 0.5 µs td delay time on falling edge − − 500 ns 2003 Feb 19 17 V Philips Semiconductors Product specification I2C-bus SIM card interface SYMBOL OM5926HN PARAMETER CONDITIONS MIN. TYP. MAX. UNIT internal pull-up resistance between pins SIMI/O and VDDI 16 − 26 kΩ tact activation time − − 150 µs tde deactivation time − − 120 µs Rpu(int) Timing Notes 1. Current pulses applied on VCC (5 V card): a) Continuous spikes; 20 mA amplitude; IDC = 0; 100 ns duration; pause 100 ns (2 nAs; lav = 10 mA; f = 5 MHz). b) Continuous spikes; 20 mA amplitude; IDC = 0; 400 ns duration; pause 400 ns (8 nAs; lav = 10 mA; f = 1.25 MHz). c) Continuous spikes; 15 mA amplitude; IDC = 5 mA; 150 ns duration; pause 300 ns (2.25 nAs; lav = 10 mA; f = 2.22 MHz). d) Random spikes; 200 mA amplitude; IDC = 5 mA; 200 ns duration; pause between 0.1 and 500 ms (40 nAs) (see Fig.7). e) Random spikes; 100 mA amplitude; IDC = 0; 400 ns duration; pause between 0.1 and 500 ms (40 nAs). f) Random spikes; 195 mA amplitude; IDC = 5 mA; 200 ns duration; pause between 0.1 and 500 ms (39 nAs). 2. Current pulses applied on VCC (3 V card): a) Continuous spikes; 12 mA amplitude; IDC = 0; 100 ns duration; pause 100 ns (1.2 nAs; lav = 6 mA; f = 5 MHz). b) Continuous spikes; 12 mA amplitude; IDC = 0; 400 ns duration; pause 400 ns (4.8 nAs; lav = 6 mA; f = 1.25 MHz). c) Continuous spikes; 9 mA amplitude; IDC = 3 mA; 150 ns duration; pause 300 ns (2.25 nAs; lav = 6 mA; f = 2.22 MHz). d) Random spikes; 60 mA amplitude; IDC = 5 mA; 200 ns duration; pause between 0.1 and 500 ms (12 nAs). e) Random spikes; 30 mA amplitude; IDC = 0; 400 ns duration; pause between 0.1 and 500 ms (12 nAs). f) Random spikes; 57 mA amplitude; IDC = 3 mA; 200 ns duration; pause between 0.1 and 500 ms (11.4 nAs). handbook, full pagewidth current (mA) MGU808 200 mA time (ns) 200 ns Fig.7 Example of 200 mA and 200 ns current pulse. 2003 Feb 19 18 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN 13 APPLICATION INFORMATION VBAT handbook, full pagewidth 2.7 kΩ 2.7 kΩ PGND S3 18 DEL SIMI/O 17 16 VDDS 15 14 2 3 13 OM5926HN 4 12 5 100 nF (1) 7 S4 VDDP 6 8 11 10 9 RST VBAT 100 nF VCC CLK (4) 100 nF (5) C1 C5 C2 C6 C3 C7 (3) (3) (3) 22 µF 100 nF VBAT (1) Capacitors on the DC-to-DC converter must have ESR less than 100 mΩ and must be placed close to the chip (some mm). (2) Capacitor on VCC must have ESR less than 100 mΩ. (3) Tracks from the chip to the smart card connector must be as short as possible. If VCC track exceeds 2 cm, then 2 capacitors have to be used: one near the chip, the second near the contact. (4) CLK signal has to be routed far from I/O and RST. (5) C5 must be electrically linked to chips GND without ground loop. Fig.8 Application information. 2003 Feb 19 (2) SGND 100 nF (1) 100 nF (1) (3) I/O S1 19 VUP PWROFF 20 1 S2 SIMCLK VDDI SYSTEM CONTROLLER SDA SCL 10 nF 19 MGU809 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN 14 PACKAGE OUTLINE HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 5 x 5 x 0.85 mm A B D SOT662-1 terminal 1 index area A A1 E c detail X C e1 e b 6 y y1 C v M C A B w M C 10 L 11 5 e e2 Eh 1 15 terminal 1 index area 20 16 X Dh 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 e2 L v w y y1 mm 1 0.05 0.00 0.38 0.23 0.2 5.1 4.9 3.25 2.95 5.1 4.9 3.25 2.95 0.65 2.6 2.6 0.75 0.50 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT662-1 --- MO-220 --- 2003 Feb 19 20 EUROPEAN PROJECTION ISSUE DATE 01-08-08 02-10-22 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN To overcome these problems the double-wave soldering method was specifically developed. 15 SOLDERING 15.1 Introduction to soldering surface mount packages If wave soldering is used the following conditions must be observed for optimal results: This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. • For packages with leads on two sides and a pitch (e): There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 15.2 – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferably be kept: Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. • below 220 °C for all the BGA packages and packages with a thickness ≥ 2.5mm and packages with a thickness <2.5 mm and a volume ≥350 mm3 so called thick/large packages 15.4 • below 235 °C for packages with a thickness <2.5 mm and a volume <350 mm3 so called small/thin packages. 15.3 Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. 2003 Feb 19 Manual soldering When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 21 Philips Semiconductors Product specification I2C-bus SIM card interface 15.5 OM5926HN Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE(1) WAVE BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable(3) DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS not PLCC(4), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO, VSSOP REFLOW(2) suitable suitable suitable not recommended(4)(5) suitable not recommended(6) suitable Notes 1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2003 Feb 19 22 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN 16 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 17 DEFINITIONS 18 DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Feb 19 23 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN 19 PURCHASE OF PHILIPS I2C COMPONENTS Purchase of Philips I2C components conveys a license under the Philips’ I2C patent to use the components in the I2C system provided the system conforms to the I2C specification defined by Philips. This specification can be ordered using the code 9398 393 40011. 2003 Feb 19 24 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN NOTES 2003 Feb 19 25 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN NOTES 2003 Feb 19 26 Philips Semiconductors Product specification I2C-bus SIM card interface OM5926HN NOTES 2003 Feb 19 27 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613502/01/pp28 Date of release: 2003 Feb 19 Document order number: 9397 750 10124