RENESAS 2SC2856

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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these changes do not constitute any alteration to the contents of the document itself.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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contained therein.
2SC2855, 2SC2856
Silicon NPN Epitaxial
ADE-208-1079 (Z)
1st. Edition
Mar. 2001
Application
• Low frequency low noise amplifier
• Complementary pair with 2SA1190 and 2SA1191
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2855, 2SC2856
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC2855
2SC2856
Unit
Collector to base voltage
VCBO
90
120
V
Collector to emitter voltage
VCEO
90
120
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
100
100
mA
Emitter current
IE
–100
–100
mA
Collector power dissipation
PC
400
400
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
2
2SC2855, 2SC2856
Electrical Characteristics (Ta = 25°C)
2SC2855
2SC2856
Item
Symbol Min
Typ
Max Min
Typ
Max Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
90
—
—
120
—
—
V
I C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
90
—
—
120
—
—
V
I C = 1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.1
—
—
0.1
µA
VCB = 70 V, IE = 0
Emitter cutoff current
I EBO
—
—
0.1
—
—
0.1
µA
VEB = 2 V, IC = 0
250
—
800
250
—
800
1
VCE = 12 V, IC = 2 mA*2
DC current transfer ratio
hFE*
Collector to emitter
saturation voltage
VCE(sat)
—
0.05 0.10 —
0.05 0.10 V
Base to emitter saturation VBE(sat)
voltage
—
0.7
1.0
—
0.7
1.0
V
Gain bandwidth product
fT
—
310
—
—
310
—
MHz
VCE = 6 V, IC = 10 mA
Collector output
capacitance
Cob
—
3
—
—
3
—
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
0.15 1.5
—
0.15 1.5
dB
VCE = 6 V, IC = 0.1 mA,
Rg = 10 kΩ, f = 1 kHz
—
0.2
2.0
—
0.2
2.0
dB
VCE = 6 V, IC = 0.1 mA,
Rg = 10 kΩ, f = 10 Hz
—
0.7
—
—
0.7
—
nV/√Hz VCE = 6 V, IC = 10 mA,
Rg = 0, f = 1 kHz
Noise voltage referred to
input
en
I C = 10 mA, IB = 1 mA*2
Notes: 1. The 2SC2855 and 2SC2856 are grouped by h FE as follows.
2. Pulse test
D
E
250 to 500
400 to 800
3
2SC2855, 2SC2856
Typical Output Characteristics
20
8
4
0
150
W
50
100
Ambient Temperature Ta (°C)
m
0
12
0
40
200
24
22
16
=
Collector Current IC (mA)
400
26
PC
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
600
20
18
16
14
12
10
8
6
4
2 µA
IB = 0
20
40
60
80
100
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Typical Output Characteristics
10
8
16
14
6
12
10
4
8
6
2
4
2 µA
IB = 0
0
4
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
VCE = 6 V
Pulse
100
Collector Current IC (mA)
Collector Current IC (mA)
18
Ta = 75°C
10
25°C
–25°C
1.0
0.1
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
2SC2855, 2SC2856
Collector Cut-Off Current vs.
Collector to Base Voltage
Collector Cut-Off Current vs. Collector to
Emitter Voltage
1,000
100
Ta
=
75
Collector Cut-Off Current ICEO (nA)
Collector Cut-Off Current ICBO (pA)
1,000
°C
25
–25
10
1.0
0.1
0
Collector to Emitter Breakdown Voltage
V(BR)CER (V)
°C
75
=
5
25
–2
1.0
0.1
2
4
6
8
Emitter to Base Voltage VEB (V)
20
40
60
80
100
Collector to Emitter Voltage VCE (V)
Collector to Emitter Breakdown
Voltage vs. Base to Emitter Resistance
Ta
Emitter Cut-Off Current IEBO (pA)
–25
1.0
20
40
60
80
100
Collector to Base Voltage VCB (V)
1,000
0
=7
25
10
Emitter Cut-Off Current vs.Emitter to
Base Voltage
10
Ta
0.1
0
100
5°C
100
10
190
180
Typical Value
IC = 1 mA
170
160
150
140
10
100
1k
10 k
100 k
Base to Emitter Resistance RBE (Ω)
5
2SC2855, 2SC2856
DC Current Transfer Ratio vs.
Collector Current
Collector to Emitter Saturation Voltage
VCE(sat) (V)
DC Current Transfer Ratio hFE
1,000
Ta = 75°C
25
–25
300
100
30
VCE = 12 V
Pulse
10
1
3
10
30
Collector Current IC (mA)
Collector to Emitter Saturation Voltage vs.
Collector Current
1.0
Pulse
IC = 10 IB
0.3
0.1
Ta = 75°C
25
–25
0.03
0.01
100
1
1,000
10
Pulse
IC = 10 IB
Gain Bandwidth Product fT (MHz)
Base to Emitter Saturation Voltage
VBE(sat) (V)
100
Gain Bandwidth Product vs.
Collector Current
Base to Emitter Saturation Voltage vs.
Collector Current
3
1.0
Ta =–25°C
75
25
0.3
0.1
1
6
3
10
30
Collector Current IC (mA)
3
10
30
Collector Current IC (mA)
100
VCE = 6 V
500
200
100
50
20
10
0.5
1.0
2
5
10 20
Collector Current IC (mA)
50
2SC2855, 2SC2856
Noise Voltage Referred to Input vs.
Collector Current
100
10
IE = 0
f = 1 MHz
Noise Voltage Referred to Input
Hz)
en (nV/ √
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
30
10
3
3
1.0
0.3
0.1
0.1
1
1
VCE = 6 V
Rg = 0
f = 1 kHz
3
10
30
100
Collector to Base Voltage VCB (V)
Noise Voltage Referred to Input vs.
Signal Source Resistance
1.0
VCE = 6 V
f = 1 kHz
100
A
IC
=
10
m
1
.0
1
0.
10
1.0
Noise Voltage Referred to Input
Hz)
en (nV/ √
Noise Voltage Referred to Input
Hz)
en (nV/ √
10
Noise Voltage Referred to Input vs.
Collector to Emitter Voltage
1,000
0.1
10
0.3
1.0
3
Collector Current IC (mA)
0.9
0.8
0.7
IC = 1 mA
Rg = 0
f = 1 kHz
0.6
0.5
100
1k
10 k
100 k
Signal Source Resistance Rg (Ω)
1
3
10
30
100
Collector to Emitter Voltage VCE (V)
7
2SC2855, 2SC2856
Noise Voltage Referred to Input vs.
Frequency
Noise Voltage Referred to Input
Hz)
en (nV/ √
2.0
VCE = 6 V
Rg = 0
1.6
1.2
0.8
10
0.4
0
10
8
IC = 1 mA
100
1k
10 k
Frequency f (Hz)
100 k
2SC2855, 2SC2856
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
0.7
0.60 Max
0.55Max
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.4
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
9
2SC2855, 2SC2856
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
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Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
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Germany
Tel: <49> (89) 9 9180-0
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Fax : <65>-538-6933/538-3877
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Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
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Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
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Telex : 23222 HAS-TP
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Hong Kong
Tel : <852>-(2)-735-9218
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URL : http://www.hitachi.com.hk
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
10