2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) V VCB= VEBO 5 V IEBO IC 15 A V(BR)CEO IB 4 A hFE PC 130(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=10V, f=1MHz 180 160 V 50min∗ IC=5A, IB=0.5A 2.0max V VCE=12V, IE=–2A 50typ MHz 250typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.2typ 1.3typ 0.45typ I B =20mA 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) DC Cur rent Gain h FE Typ 50 5 125˚C 100 25˚C –30˚C 50 10 0.02 10 15 0.1 Collector Current I C (A) 0.5 1 5 10 15 0.1 Co lle ctor Cu rr ent I C (A) ) mp Te nk Collector-Emitter Voltage V C E (V) 2 200 si 100 at –10 50 he –5 10 ite 1.2SC3519 2.2SC3519A fin Without Heatsink Natural Cooling 100 In 1 0.5 1 –1 1000 2000 ith M aximum Power Dissipa ti on P C (W) ms DC 5 0.05 5 100 P c – T a Derating 0.1 Emitter C urrent I E (A) 10 W 20 –0.1 1 Time t(ms) 10 0 –0.02 p) 0.5 130 10 40 se 1 40 Typ (Ca 3 Safe Operating Area (Single Pulse) 80 2 θ j-a – t Characteristics (V C E =12V) 60 1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 100 Transient Thermal Resistance 300 300 1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 em I C =10A 1 ˚C 50mA eT 5 10 as 10 0m A 2 (C A C 200m 10 25 mA (V C E =4V) 5˚ 300 1.4 E 15 3 12 A Collector Current I C (A) m 400 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) mA 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m Collector Current I C (A) 70 6 500 2 3 B RL (Ω) A ø3.2±0.1 5.45±0.1 VCC (V) m 00 a 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 15 2.0±0.1 b VCE=4V, IC=5A I C – V CE Characteristics (Typical) 1.8 2.0 µA 180min 160min 4.8±0.2 V 100max VEB=5V IC=25mA 15.6±0.4 9.6 –30 Tstg µA ˚C 180 ICBO Unit 4.0 V Conditions 19.9±0.3 160 Symbol External Dimensions MT-100(TO3P) 4.0max VCEO Unit (Ta=25°C) Ratings 2SC3519 2SC3519A 100max 5.0±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3519 2SC3519A VCBO 160 180 Application : Audio and General Purpose 20.0min LAPT 50 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 67