HITACHI 2SC3867

2SC3867
Silicon NPN Epitaxial
Application
• UHF frequency converter
• Wide band amplifier
Outline
MPAK
3
1
2
1. Base
2. Emitter
3. Collector
2SC3867
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
11
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
20
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
11
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
3
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 15 V, IE = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.7
V
I C = 10 mA, IB = 5 mA
DC current transfer ratio
hFE
45
—
200
Gain bandwidth product
fT
2.5
3.8
—
GHz
VCE = 10 V, IC = 10 mA
Collector output capacitance
Cob
—
0.8
1.5
pF
VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain
CG
10
14
—
dB
VCC = 10 V, IC = 1 mA,
f = 900 MHz,
Noise figure
NF
—
10
14
dB
f osc = 930 MHz, (–5dBm),
fout = 30 MHz
Note: Marking is “DI–”
2
VCE = 10 V, IC = 5 mA
2SC3867
DC Current Transfer Ratio vs.Collector Current
200
VCE = 10 V
DC Current Transfer Ratio hFE
150
100
50
Gain Bandwidth Product fT (GHz)
160
120
80
40
0
1
50
100
150
Ambient Temperature Ta (°C)
0
Gain Bandwidth Product vs.Collector Current
5
VCE = 10 V
4
3
2
1
0
1
2
5
10
20
Collector Current IC (mA)
50
2
5
10
20
Collector Current IC (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance Cob (pF)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
2.0
f = 1 MHz
IE = 0
1.6
1.2
0.8
0.4
0
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC3867
Noise Figure vs. Collector Current
Conversion Gain vs. Collector Current
20
16
16
12
8
4
0
0.1
4
VCC = 6 V
f = 900 MHz
fosc = 930 MHz
(–5 dBm)
fout = 30 MHz
Noise Figure NF (dB)
Conversion Gain CG (dB)
20
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
VCC = 6 V
f = 900 MHz
fosc = 930 MHz
(–5 dBm)
fout = 30 MHz
12
8
4
0
0.1
0.2
0.5
1.0
2
Collector Current IC (mA)
5
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.