Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1±0.1 ■ Features 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter 1:Base 2:Emitter 3:Collector +0.1 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 2W (Ta=25˚C) Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 1V, IC = 0 hFE1 VCE = 8V, IC = 20mA 50 80 Forward current transfer ratio 0.15–0.05 0 to 0.1 (Ta=25˚C) 0.7±0.1 ■ Absolute Maximum Ratings 0.9±0.1 0.2 ● 1.3±0.1 ● 1.25±0.1 0.65 ● Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.425 typ VCB = 15V, IE = 0 150 max Unit 1 µA 1 µA 300 hFE2 VCE = 1V, IC = 3mA Transition frequency fT VCE = 8V, IC = 20mA, f = 800MHz 280 Collector output capacitance Cob VCE = 10V, IE = 0, f = 1MHz 0.7 1.2 pF Noise figure NF VCE = 8V, IC = 7mA, f = 800MHz 1 1.7 dB Maximum unilateral power gain GUM VCE = 8V, IC = 20mA, f = 800MHz 14 dB Foward transfer gain | S21e |2 VCE = 8V, IC = 20mA, f = 800MHz 13 dB 6 GHz 1 2SC3937 Transistor PC — Ta IC — VCE 120 IB=400µA 50 160 120 80 40 40 250µA 200µA 30 150µA 20 100µA 60 80 100 120 140 160 2 10 3 1 0.3 Ta=75˚C, 25˚C, –25˚C 0.3 0.03 0.3 1 3 10 30 0.4 10 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 Ta=75˚C 300 25˚C 200 –25˚C 100 1 3 10 24 30 VCE=8V f=800MHz Ta=25˚C 10 8 6 4 2 0 0.1 100 0.3 1 3 10 30 100 Collector current IC (mA) NF — IC 6 VCE=8V f=800MHz Ta=25˚C 20 16 12 8 4 0 0.1 2.0 fT — IC 400 0.3 1.6 Base to emitter voltage VBE (V) VCE=8V (Rg=50Ω) f=800MHz Ta=25˚C 5 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.5 3 0 GUM — IC 1.2 1 12 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.3 10 500 0 0.1 100 1.6 0 0.1 8 12 Cob — VCB 2.0 6 VCE=8V Collector current IC (mA) 2.4 4 600 Forward current transfer ratio hFE 30 0.01 0.1 40 hFE — IC IC/IB=10 –25˚C 60 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 Ta=75˚C 0 0 Transition frequency fT (GHz) 40 25˚C 80 20 50µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 100 300µA 10 0 Collector output capacitance Cob (pF) VCE=8V Ta=25˚C 350µA Collector current IC (mA) 200 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 240 4 3 2 1 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100