NIKO-SEM N-Channel Logic Level Enhancement P2504BDG Mode Field Effect Transistor ( Preliminary ) TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current 12 ID TC = 100 °C 10 Pulsed Drain Current 1 IDM TC = 25 °C Power Dissipation A 45 41 PD TC = 100 °C W 32 Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJc 3 °C / W Junction-to-Ambient RθJA 75 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TC = 125 °C 10 Gate Threshold Voltage On-State Drain Current 1 Drain-Source On-State Resistance1 ID(ON) RDS(ON) VDS = 10V, VGS = 10V V 2.0 3.0 45 µA A VGS = 4.5V, ID = 10A 35 45 VGS = 10V, ID = 12A 21 25 1 nA mΩ JAN-17-2005 N-Channel Logic Level Enhancement P2504BDG NIKO-SEM Mode Field Effect Transistor ( Preliminary ) Forward Transconductance1 gfs VDS = 10V, ID = 12A TO-252 (DPAK) Lead-Free 18 S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 55 Total Gate Charge Qg 16 Gate-Source Charge2 Qgs VDS = 0.5V (BR)DSS, VGS = 10V, 2.5 Gate-Drain Charge2 Qgd ID = 12A 2.1 2 2 Turn-On Delay Time tr Turn-Off Delay Time2 td(off) Fall Time2 VGS = 0V, VDS = 10V, f = 1MHz td(on) 2 Rise Time 760 pF 165 nC 2.1 4.2 VDS = 20V, RL = 1Ω 7.2 14 ID ≅ 1A, VGS = 10V, RGEN = 6Ω 11.6 21.0 3.5 7.2 tf nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 12 Pulsed Current 3 ISM 40 Forward Voltage1 VSD IS = IS, VGS = 0V Reverse Recovery Time trr IF = 5 A, dlF/dt = 100A / µS Reverse Recovery Charge Qrr 1.2 A V 14.5 nS 7.2 nC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P2504BDG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 JAN-17-2005 N-Channel Logic Level Enhancement P2504BDG Mode Field Effect Transistor ( Preliminary ) TO-252 (DPAK) Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125°C 10 Is - Reverse Drain Current(A) NIKO-SEM 25°C 1 -55°C 0.1 0.01 0.001 0 3 0.2 0.4 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 JAN-17-2005 NIKO-SEM N-Channel Logic Level Enhancement P2504BDG Mode Field Effect Transistor ( Preliminary ) 4 TO-252 (DPAK) Lead-Free JAN-17-2005 N-Channel Logic Level Enhancement P2504BDG NIKO-SEM Mode Field Effect Transistor ( Preliminary ) TO-252 (DPAK) Lead-Free TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 9.35 10.1 H 0.8 B 2.2 2.4 I 6.4 6.6 C 0.48 0.6 J 5.2 5.4 D 0.89 1.5 K 0.6 1 E 0.45 0.6 L 0.64 0.9 F 0.03 0.23 M 4.4 4.6 G 6 6.2 N D C E F B A G M XXXXXXXXX NIKOS J I L H K 5 JAN-17-2005