2SC4529 Silicon NPN Epitaxial VHF Wide Band Amplifier Absolute Maximum Ratings (Ta = 25°C) Item TO-126 MOD Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 30 V ————————————————————– Collector to emitter voltage VCEO 20 V ————————————————————– Emitter to base voltage VEBO 3 V ————————————————————– Collector current IC 300 mA ————————————————————– Collector peak current iC(peak) 500 1 mA ————————————————————– Collector power dissipation PC 1 W 2 3 1. Emitter 2. Collector 3. Base ——–———– PC*1 5 ————————————————————– Junction temperature Tj 150 °C ————————————————————– Storage temperature Tstg –55 to °C +150 ————————————————————– Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 30 — — V IC = 100 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 20 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Collector cutoff current ICBO — — 1.0 µA VCB = 25 V, IE = 0 ——————————————————————————————————————————— Emitter cutoff Current IEBO — — 10 µA VEB = 3 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE 50 — 200 VCE = 5 V, IC = 50 mA ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 1.0 V IC = 100 mA, IB = 10 mA ——————————————————————————————————————————— Gain bandwidth product fT 1.5 2.2 — GHz VCE = 5 V, IC = 50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 4.7 — pF VCB = 10 V, IE = 0, f = 1 MHz ———————————————————————————————————————————