2SA1958 Silicon PNP Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = -150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complementary pair with 2SC5120 12 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO –150 V ——————————————————————————————————————————— Collector to emitter voltage VCEO –150 V ——————————————————————————————————————————— Emitter to base voltage VEBO –3 V ——————————————————————————————————————————— Collector current IC –0.2 A ——————————————————————————————————————————— Collector peak current ic(peak) –0.4 A ——————————————————————————————————————————— Collector power dissipation PC 1.4 W ————— 8*1 ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Note: 1. Tc = 25°C 2SA1958 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO –150 — — V IC = –10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO –150 — — V IC = –1 mA, RBE = ∞ ——————————————————————————————————————————— Collector cutoff current ICBO — — –10 µA VCB = –100 V, IE = 0 ——————————————————————————————————————————— Emitter cutoff current IEBO — — –10 µA VEB = – 3 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE 50 — 150 — VCE = –10 V, IC = –10 mA ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — –1.0 V IC = –50 mA IB = – 5 mA ——————————————————————————————————————————— Gain bandwidth product fT 400 500 — MHz VCE = –20 V IC = –50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 5.0 6.0 pF VCB = –30 V, IE = 0 f=1MHz ——————————————————————————————————————————— 2SA1958 Maximum Collector Dissipation Curve Area of Safe Operation –1.0 0 Collector Current 50 100 150 200 Case Temperature Tc (°C) Ambient Temperature Ta (°C) –0.1 –0.05 –0.02 –0.01. –10 –20 –50 –100 –200 –500 Collector to Emitter Voltage VCE (V) Typical Output Characteristics –20 mA –18 mA –16 mA 1000 mA –8 mA 6 – mA –4 A –2 m –0.1 Tc = 25 °C IB= 0 0 DC Current Transfer Ratio vs. Collector Current –12 mA –10 mA –5 –10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio h FE Collector Current I C (A) –0.2 –14 mA ms 10 on ) ati °C ms er 25 Op c = (T Ta I C max DC 1.4W –0.2 =1 Tc 4 2 –0.5 ic(peak) I C (A) 6 1 shot pulse (Ta = 25 °C) PW Collector Power Dissipation Pc (W) 8 500 Tc = 75°C 200 25°C 100 50 –25°C 20 10 –1 VCE = –10 V –2 –5 –10 –20 Collector Current –50 –100 –200 I C (mA) 2SA1958 Base to Emitter Saturation Voltage V BE(sat) (V) –5 I C/ I B = 10 –2 –1 –0.5 I C / I B = 10 –5 –2 –25°C 25°C –1 –0.5 –0.2 Tc = 75°C 25°C –0.1 –1 –2 –5 –10 –20 Collector Current –0.1 –50 –100 –200 1000 500 200 100 50 V CE = –20 V Tc = 25 °C 20 –2 –5 –10 –20 Collector Current –1 I C (mA) Gain Bandwidth Product vs. Collector Current 10 –1 Tc = 75°C –0.2 –25°C –0.05 Gain Babdwidth Product f T (MHz) Base to Emitter Saturation Voltage vs. Collector Current –10 –10 –50 –100 –200 I C (mA) –2 –5 –10 –20 Collector Current Collector Output Capacitance Cob (pF) Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current –50 –100 –200 I C (mA) Collector Output Capacitance vs. Collector to Base Voltage 100 IE = 0 f = 1 MHz 50 20 10 5 2 1 –1 –2 –5 –10 –20 –50 –100 Collector to Base Voltage V CB (V) 2SA1958 Package Dimensions Unit : mm φ 3.2 +0.15 –0.1 8.0 ± 0.4 6.0 3.2 ± 0.4 1.9 Max 11.0 ± 0.5 3.5 1.0 • TO–126FM 15.6 ± 0.5 1.7 0.65 2.29 ± 0.5 0.7 2.29 ± 0.5 Hitachi Code TO–126FM — EIAJ — JEDEC