HITACHI 2SC458LG

2SC458 (LG), 2SC2310
Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SA1031 and 2SA1032
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC458 (LG), 2SC2310
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC458 (LG)
2SC2310
Unit
Collector to base voltage
VCBO
30
55
V
Collector to emitter voltage
VCEO
30
50
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
100
100
mA
Emitter current
IE
–100
–100
mA
Collector power dissipation
PC
200
200
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
2
2SC458 (LG), 2SC2310
Electrical Characteristics (Ta = 25°C)
2SC458 (LG)
2SC2310
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
30
—
—
55
—
—
V
I C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
30
—
—
50
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
—
—
0.5
µA
VCB =18 V, IE = 0
Emitter cutoff current
I EBO
—
—
0.5
—
—
0.5
µA
VEB = 2 V, IC = 0
100
—
500
100
—
320
—
—
0.2
—
—
0.2
V
I C = 10 mA, IB = 1 mA
Base to emitter voltage VBE
—
0.67
0.75
—
0.67
0.75
V
VCE = 12 V, IC = 2 mA
Gain bandwidth product f T
—
230
—
—
230
—
MHz
VCE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
1.8
3.5
—
1.8
3.5
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
3
5
—
3
5
dB
VCE = 6 V, IC = 0.1 mA,
f = 120 Hz, Rg = 500 Ω
Small signal input
impedance
hie
—
16.5
—
—
16.5
—
kΩ
VCE = 5V, IC = 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
hre
—
70
—
—
70
—
× 10 –6
Small signal current
transfer ratio
hfe
—
130
—
—
130
—
Small signal output
admittance
hoe
—
11.0
—
—
11.0
—
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Note:
1
VCE(sat)
VCE = 12 V, IC = 2 mA
µS
1. The 2SC458 (LG) and 2SC2310 are grouped by hFE as follows.
B
C
D
2SC458 (LG) 100 to 200
160 to 320
250 to 500
2SC2310
160 to 320
—
100 to 200
3
2SC458 (LG), 2SC2310
Typical Output Characteristics
200
100
P
10
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
300
60
20
50
8
0m
W
40
6
30
4
20
10 µA
2
0
50
100
150
Ambient Temperature Ta (°C)
5
10
15
20
25
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
300
4
DC Current Transfer Ratio hFE
5
Collector Current IC (mA)
=
IB = 0
0
VCE = 12 V
3
2
1
0
4
C
0.2
0.4
0.6
0.8
Base to Emitter Voltage VBE (V)
1.0
VCE = 12 V
200
Ta =
75°C
25
100
0
0.03
0.1
0.3
1.0
3
10
Collector Current IC (mA)
30
2SC458 (LG), 2SC2310
Base to Emitter Voltage vs.
Ambient Temperature
300
0.9
f = 270 Hz
VCE = 12 V
Base to Emitter Voltage VBE (V)
Small Signal Current Transfer Ratio hfe
Small Signal Current Transfer Ratio vs.
Collector Current
200
100
0
0.03
0.1
0.3
1.0
3
10
0.8
0.7
0.6
0.5
0.4
–20
30
Collector Current IC (mA)
IE = 0
f = 1 MHz
3
2
1
4
8
12
16
20
Collector to Base Voltage VCB (V)
Emitter Input Capacitance Cib (pF)
Collector Output Capacitance Cob (pF)
80
5
5
0
0
20
40
60
Ambient Temperature Ta (°C)
Emitter Input Capacitance vs.
Emitter to Base Voltage
Collector Output Capacitance vs.
Collector to Base Voltage
4
VCE = 12 V
IC = 2 mA
IC = 0
f = 1 MHz
4
3
2
1
0
2
4
6
8
Emitter to Base Voltage VEB (V)
10
5
2SC458 (LG), 2SC2310
Contours of Constant Noise Figure
Contours of Constant Noise Figure
10
14
12
5
Signal Source Resistance Rg (kΩ)
Signal Source Resistance Rg (kΩ)
10
10
2
NF = 1dB
8
2
1.0
6
3
0.5
4
0.2
VCE = 6 V
6
f = 120 Hz
8
0.1
0.05 0.1 0.2
0.5
1.0 2.0
Collector Current IC (mA)
2
NF
1.0
1
.5 d
B
0.5
2
0.2
0.1
0.05
6
=0
2
1
3
NF = 0.5 dB
1.0
0.5
2
0.2
3
4
0.1 8
0.05 0.1 0.2
0.5
1.0 2.0
Collector Current IC (mA)
Noise Figure vs. Frequency
8
Noise Figure NF (dB)
Signal Source Resistance Rg (kΩ)
VCE = 6 V
f = 10 kHz
2
10
4
5
4
1.0
Contours of Constant Noise Figure
10
8
5 V =6V
CE
f = 1 kHz
IC = 0.1 mA
Rg = 500 Ω
VCE = 6 V
6
4
2
4
0.1 0.2
0.5
1.0 2.0
Collector Current IC (mA)
0
30
100
300
1k
3k
Frequency f (Hz)
10k
30k
2SC458 (LG), 2SC2310
Noise Figure vs. Collector to Emitter Voltage
Noise Figure NF (dB)
8
IC = 0.1 mA
Rg = 500 Ω
f = 120 Hz
6
4
2
0
2
5
10
20
Collector to Emitter Voltage VCE (V)
h Parameter vs. Collector Current
100
50
20 VCE = 6 V
10 f = 270 Hz
5
hie
2
h
1.0 hfe re
0.5
hoe
0.2
0.1
0.05
hoe
hre
hfe
hie
0.02
0.01
0.010.02 0.05 0.1 0.2 0.5 1.0 2 5 10
Collector Current IC (mA)
30
h Parameter vs. Collector to
Emitter Voltage
1.8
Percentage of Relative to VCE = 5V
Percentage of Relative to IC = 0.1mA
1
IC = 0.1 mA
f = 270 Hz
1.6
hre
1.4
hoe
1.2
hoe
1.0 hfe
hie
0.8
0.5
hfe
hie
hre
1.0
2
5
10
20
Collector to Emitter Voltage VCE (V)
7
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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