2SJ652 Ordering number : EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) PW≤10μs, duty cycle≤1% Unit --60 V ±20 V --28 A --112 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 343 mJ --28 A Avalanche Current *2 Tc=25°C Note : *1 VDD=--30V, L=500μH, IAV=--28A (Fig.1) *2 L≤500μH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7529-001 • Package • JEITA, JEDEC • Minimum Packing Quantity 4.7 10.16 3.18 2SJ652-1E Marking Electrical Connection 2 15.87 6.68 3.3 2.54 A J652 3.23 LOT No. 1 2.76 12.98 1.47 MAX DETAIL-A 0.8 1 2 3 FRAME EMC 2.54 2.54 3 (0.84) 0.5 ( 1.0) 15.8 : TO-220F-3SG : SC-67 : 50 pcs./magazine 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3SG http://semicon.sanyo.com/en/network 51612QA TKIM TC-00002759/72503 TSIM TA-4245 No.7625-1/7 2SJ652 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol min typ --60 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--14A --1.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--14A, VGS=--10V ID=--14A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS Ratings Conditions max Unit V --1 μA ±10 μA --2.6 18 26 V S 28.5 38 mΩ 39 55.5 mΩ 4360 pF 470 pF Crss 335 pF Turn-ON Delay Time td(on) 33 ns Rise Time tr td(off) 210 ns Turn-OFF Delay Time Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See Fig.2 ns 180 ns VDS=--30V, VGS=--10V, ID=--28A 80 nC 15 nC 12 IS=--28A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 0V --10V ≥50Ω RG --1.2 V VDD= --30V VIN ID= --14A RL=2.1Ω VIN 2SJ652 VDD 50Ω nC --0.96 Fig.2 Switching Time Test Circuit L 0V --10V 310 D PW=10μs D.C.≤1% VOUT G 2SJ652 P.G 50Ω S Ordering Information Device 2SJ652-1E Package Shipping memo TO-220F-3SG 50pcs./magazine Pb Free No.7625-2/7 2SJ652 VDS= --10V --4V --20 25 --10 °C 75 °C --10 0 75°C 25 VGS= --3V --30 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 Drain-to-Source Voltage, VDS -- V 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 Gate-to-Source Voltage, VGS -- V IT06535 RDS(on) -- VGS 100 0 --5.0 Tc= --25 °C --20 Drain Current, ID -- A --30 Tc= --25° C --40 --40 Drain Current, ID -- A ID -- VGS --50 --6V --10 V Tc=25°C °C ID -- VDS --50 RDS(on) -- Tc 70 --5.0 IT06536 Tc=75°C 40 25°C --25°C 20 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 100 7 Tc= 5°C --2 75° ° 5C 2 C 2 10 7 5 3 2 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 25 5 7 50 75 100 125 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.3 --0.6 --0.9 --1.2 --1.5 Diode Forward Voltage, VSD -- V IT06540 Ciss, Coss, Crss -- VDS 7 f=1MHz Ciss 5 td(off) 150 IT06538 IF -- VSD IT06539 3 Ciss, Coss, Crss -- pF 3 2 tf 100 7 tr 5 td(on) 3 2 10 --0.1 0 --10 7 5 3 2 --0.01 7 5 3 2 --0.001 SW Time -- ID 7 --25 7 5 3 2 5 1.0 --0.1 10 Case Temperature, Tc -- °C VDS= --10V 3 20 IT06537 | yfs | -- ID 0V = --1 VGS 4A, --1 I D= 30 0 --50 --10 = -GS A, V 14 -I D= 40 C 25°C --4 4V 50 Tc=7 5° --3 60 --25°C 60 0 --2 Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 Forward Current, IF -- A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --14A 2 1000 7 Coss Crss 5 3 2 VDD= --30V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 IT06541 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT06542 No.7625-3/7 2SJ652 VGS -- Qg --10 --8 --7 --6 --5 --4 --3 --1 3 2 10 20 30 40 50 60 Total Gate Charge, Qg -- nC 70 80 0.5 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06545 s 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.0 20 2 PD -- Tc 40 1.5 0 1m s 10 ms 0m DC s op era tio n Tc=25°C Single pulse IT06559 2.0 0μ Operation in this area is limited by RDS(on). --0.1 --0.1 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 μs 10 10 --10 7 5 --2 0 10 ID= --28A 3 2 --1.0 7 5 0 IDP= --112A (PW≤10μs) --100 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 0 ASO 3 2 5 7 --100 IT16830 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06544 No.7625-4/7 2SJ652 Magazine Specification 2SJ652-1E No.7625-5/7 2SJ652 Outline Drawing 2SJ652-1E Mass (g) Unit 1.8 mm * For reference No.7625-6/7 2SJ652 Note on usage : Since the 2SJ652 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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