HITACHI PM45502C

PM45502C
Silicon N-Channel Power MOS FET Module
November 1996
Application
High Speed Power Switching
Features
•
•
•
•
•
•
•
•
Equipped with Power MOS FET
Low on-resistance
High speed switching
Low drive current
Wide area of safe operation
Inherent parallel diode between source and drain
Isolated base from Terminal
Suitable for motor driver, switching regulator and etc.
PM45502C
Outline
Equivalent Circuit
LF-C
D2
D2
S2
Rg
D1
G2
S1
S2
G1
S1
D1
S2
No
S1
D1
S2
D2
G1
S1
G2
S2
S2
Rg
G2
Electrode
Source 1
Drain 1
Source 2
Drain 2
Gate 1
Source 1
Gate 2
Source 2
G1
Terminals
M5 screw
M5 screw
M5 screw
M5 screw
#110
#110
#110
#110
S1
Remarks
Power terminal
S1
Signal terminals
Absolute Maximum Ratings (Ta = 25°C) (Per FET chip)
Item
Symbol
Rating
Unit
Drain source voltage
VDSS
450
V
Gate source voltage
VGSS
±20
V
Drain current
ID
50
A
Drain peak current
ID(peak)
100
A
Body to drain diode reverse drain current
IDR
50
A
Body to drain diode reverse drain peak current
IDR(peak)
100
A
1
300
W
150
°C
–45 to +125
°C
2000
V
Channel dissipation
Pch*
Channel temperature
Tch
Storage temperature
Tstg
Insulation dielectric
Notes 1. Value at Tc = 25°C
2. Base to terminals AC minute
2
2
Visol*
PM45502C
Electrical Characteristics (Ta = 25°C) (Per FET chip)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
450
—
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
—
±50
µA
VGS = ±16 V, VDS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS
—
—
1
mA
VDS = 360 V, VGS = 0
Gate to source threshold
voltage
VGS(th)
1.5
—
4.0
V
ID = 1 mA, VDS = 10 V
Drain to source saturation
voltage
VDS(on)
—
2.0
3.0
V
ID = 25 A, VGS = 10 V*
1
Static Drain to source on state RDS(on)
resistance
—
0.08
0.12
Ω
ID = 25 A, VGS = 10 V*
1
Forward transfer admittance
|yfs|
25
40
—
S
ID = 25 A, VDS = 10 V*
Input capacitance
Ciss
—
10250
—
pF
VDS = 10 V, VGS = 0
Output capacitance
Coss
—
3600
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
400
—
pF
Turn-on delay time
td(on)
—
150
—
ns
ID = 25 A, VGS = 10 V
Rise time
tr
—
700
—
ns
RL = 1.2 Ω
Turn-off delay time
td(off)
—
800
—
ns
Fall time
tf
—
600
—
ns
Body to drain diode forward
voltage
VDF
—
1.2
—
V
IF = 25 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
200
—
ns
IF = 25 A, VGS = 0
diF/dt = 100 A/µs
Note
1
1. Pulse Test
Mechanical Characteristics
Item
Symbol
Condition
Rating
Unit
Fixing strength
—
Mounting into main-terminal with M5 screw
15 to 20
kg•cm
—
Mounting into heat sink with M6 screw
20 to 30
kg•cm
—
Typical value
300
g
Weight
3
PM45502C
Power vs. Temperature Derating
Channel Dissipation Pch (W)
600
400
200
0
50
100
Case Temperature TC (°C)
150
Maximum Safe Operation Area
100
PW
D
C
Drain Current ID (A)
30
10
=
O
pe
0
10
m
s
ra
tio
n
10
1
(1
(T
C
=
10
µs µs
m
s
Sh
ot
)
25
3 Operation in this area
is limited by RDS (on)
°C
)
1.0
Ta = 25°C
PM45502C
PM50502C
0.3
0.1
1
3
30
10
100 300 1,000
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100
Drain Current ID (A)
80
10 V
7.0 V
Pulse Test
6.0 V
5.5 V
60
5.0 V
40
4.5 V
20
VGS = 4.0 V
0
10
20
30
40
Drain to Source Voltage VDS (V)
50
Typical Transfer Characteristics
100
–25°C
Drain Current ID (A)
Ta = 25°C
75°C
80
VDS = 20 V
Pulse Test
60
40
20
0
4
2
6
8
4
Gate to Source Voltage VGS (V)
10
Drain to Source Saturation Voltage VDS (on) (V)
PM45502C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
75 A
6
50 A
4
ID = 25 A
2
0
4
12
16
8
Gate to Source Voltage VGS (V)
20
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
VGS = 10 V
Pulse Test
0.2
0.1
15 V
0.05
0.02
0.01
0.005
2
5
20
10
50 100
Drain Current ID (A)
200
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
0.20
VGS = 10 V
Pulse Test
0.16
0.12
75 A
50 A
ID = 25 A
0.08
0.04
0
–40
40
0
80
120
Case Temperature TC (°C)
160
5
PM45502C
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
50
–25°C
VDS = 10 V
Pulse Test
20
75°C
Ta = 25°C
10
5
2
1.0
0.5
0.5
1.0
5
2
20
10
Drain Current ID (A)
50
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1,000
di/dt = 100 A/µs, VGS = 0
Ta = 25°C
Pulse Test
500
200
100
50
20
10
0.5
10
2
1.0
5
20
Reverse Drain Current IDR (A)
50
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (nF)
50
VGS = 0
f = 1 MHz
Ciss
10
Coss
1
0.1
Crss
0.05
0
20
10
30
40
Drain to Source Voltage VDS (V)
50
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
400
VDS
VDD = 100 V
16
250 V
400 V
12
300
VGS
200
100
8
VDD = 400 V
250 V
100 V
ID = 50 A
4
0
0
6
200
100
300
400
Gate Charge Qg (nc)
500
Gate to Source Voltage VGS (V)
20
500
PM45502C
Switching Characteristics
5,000
Switching Time t (ns)
VGS = 10 V
PW = 10 µs, duty < 1%
2,000
td (off)
1,000
tf
500
tr
200
td (on)
100
50
1
2
10 20
5
Drain Current ID (A)
50
100
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
100
80
Pulse Test
60
40
20
0
5 V, 10 V
VGS = 0, –10 V
0.4
1.2
1.6
0.8
2.0
Source to Drain Voltage VSD (V)
7
Normalized Transient Thermal Impedance γS (t)
PM45502C
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 0.416°C/W, TC = 25°C
0.1
0.1
0.05
0.03
0.01
10 µ
PDM
0.02
0.01
T
1 Shot Pulse
100 µ
1m
10 m
Pulse Width PW (s)
100 m
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
RL
Vin
10 V
50 Ω
VDD
.
=. 30 V
Waveforms
90%
Vin
Vout
td (on)
8
10%
10%
90%
tr
10%
90%
td (off)
tf
PW
1
D = PW
T
10
PM45502C
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
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Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
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D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
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Northern Europe Headquarters
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Berkshire SL6 8YA
United Kingdom
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Hong Kong
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Fax: 27306071
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