BSM 300 GA 170 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type VCE BSM 300 GA 170 DN2 BSM 300 GA 170 DN2 S IC Package Ordering Code 1700V 440A SINGLE SWITCH 1 C67070-A2706-A67 1700V 440A SSW SENSE 1 C67070-A2708-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 440 TC = 80 °C 300 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 880 TC = 80 °C 600 Power dissipation per IGBT W Ptot TC = 25 °C 2500 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.05 Diode thermal resistance, chip case RthJCD ≤ 0.17 Insulation test voltage, t = 1min. Vis Creepage distance °C -40 ... + 125 K/W 4000 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-27-1997 BSM 300 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 20 mA 4.8 5.5 6.2 VGE = 15 V, IC = 300 A, Tj = 25 °C - 3.4 3.9 VGE = 15 V, IC = 300 A, Tj = 125 °C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1700 V, VGE = 0 V, Tj = 25 °C - 2 3 VCE = 1700 V, VGE = 0 V, Tj = 125 °C - 8 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 400 AC Characteristics Transconductance VCE = 20 V, IC = 300 A Input capacitance 108 nF - 44 - - 3.5 - - 1 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-27-1997 BSM 300 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 300 A RGon = 5.6 Ω Rise time - 600 1200 - 200 400 - 1280 1900 - 110 160 tr VCC = 1200 V, VGE = 15 V, IC = 300 A RGon = 5.6 Ω Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 300 A RGoff = 5.6 Ω Fall time tf VCC = 1200 V, VGE = -15 V, IC = 300 A RGoff = 5.6 Ω Free-Wheel Diode Diode forward voltage V VF IF = 300 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 300 A, VGE = 0 V, Tj = 125 °C - 2.1 - Reverse recovery time µs trr IF = 300 A, VR = -1200 V, VGE = 0 V diF/dt = -1500 A/µs, Tj = 125 °C Reverse recovery charge - 1 µC Qrr IF = 300 A, VR = -1200 V, VGE = 0 V diF/dt = -1500 A/µs Tj = 25 °C - 22 - Tj = 125 °C - 70 - 3 Oct-27-1997 BSM 300 GA 170 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 4 2600 W A 2200 Ptot IC 2000 t = 1.2µs p 10 3 1800 1600 10 µs 1400 10 2 100 µs 1200 1000 1 ms 800 10 1 600 10 ms 400 200 0 0 20 40 60 80 100 120 °C 10 0 0 10 160 10 1 10 DC 2 10 3 TC Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 450 K/W A IC V VCE ZthJC 350 10 -1 300 250 10 -2 D = 0.50 200 0.20 0.10 150 0.05 10 -3 100 0.02 single pulse 0.01 50 0 0 20 40 60 80 100 120 °C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-27-1997 BSM 300 GA 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 600 600 A 500 IC 450 400 A 17V 15V 13V 11V 9V 7V 500 IC 450 400 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0.0 17V 15V 13V 11V 9V 7V 0 1.0 2.0 3.0 4.0 V 6.0 VCE 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 1200 A 1000 IC 900 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 V 14 VGE 5 Oct-27-1997 BSM 300 GA 170 DN2 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 300 A Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V Ciss nF VGE 16 C 14 800 V 1200 V 10 1 12 10 Coss 8 10 0 Crss 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 µC 10 -1 0 4.5 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tp ≤ 1 ms, L < 20 nH ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 20 nH 2.5 12 ICpulsIC ICsc/IC 1.5 di/dt = 1000A/µs 3000A/µs 5000A/µs 8 di/dt = 1000A/µs 3000A/µs 5000A/µs 6 1.0 4 ° allowed numbers of short circuit: <1000 ° time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 1400 V 1800 VCE 6 0 0 200 400 600 800 1000 1200 1400 V 1800 VCE Oct-27-1997 BSM 300 GA 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, RG = 5.6 Ω par.: VCE = 1200 V, VGE = ± 15 V, IC = 300 A 10 4 10 4 ns ns t tdoff t tdoff 10 3 10 3 tdon tdon tr tr tf 10 2 10 1 0 100 200 300 400 500 A IC 10 2 10 1 0 700 tf 5 10 15 20 Ω 30 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, RG = 5.6 Ω par.: VCE = 1200 V, VGE = ± 15 V, IC = 300 A E 1000 1000 mWs mWs 800 E 700 800 700 Eon 600 600 500 500 400 400 300 300 Eoff 200 Eon 200 Eoff 100 0 0 100 100 200 300 400 500 A IC 700 7 0 0 5 10 15 20 Ω 30 RG Oct-27-1997 BSM 300 GA 170 DN2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 0 600 K/W A Tj=125°C 500 IF Diode Tj=25°C ZthJC 450 10 -1 400 10 -2 350 300 D = 0.50 250 10 -3 0.20 0.10 200 0.05 single pulse 150 10 0.02 -4 100 0.01 50 0 0.0 0.5 1.0 1.5 2.0 2.5 V VF 3.5 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-27-1997 BSM 300 GA 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 Oct-27-1997