MIMMG600WB060B6N

MIMMG600WB060B6N
600V 600A IGBT Module
RoHS Compliant
FEATURES
· Ultra Low Loss
· High Ruggedness
· High Short Circuit Capability
· Positive Temperature Coefficient
· Integrated Gate Resistor
APPLICATIONS
· Invertor
· Convertor
GWB Series Module
· Welder
· SMPS and UPS
· Induction Heating
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
600
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
700
A
TC=60°C
600
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
1400
A
TC=60°C, tp=1ms
1200
A
Ptot
Power Dissipation Per IGBT
2080
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +150
°C
Visol
Insulation Test Voltage
3000
V
600
V
TC=25°C
630
A
TC=60°C
550
A
890
A
AC, t=1min
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
1800
A
Forward Current
TJ=45°C, t=8.3ms, Sine
1900
A
MIMMG600WB060B6N
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
4.5
5.5
6.5
V
2.45
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=10mA
Collector - Emitter
IC=600A, VGE=15V, TJ=25°C
1.95
Saturation Voltage
IC=600A, VGE=15V, TJ=125°C
2.2
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
V
VCE=600V, VGE=0V, TJ=25°C
1
mA
VCE=600V, VGE=0V, TJ=125°C
5
mA
1.4
μA
3.0
Ω
VCE=0V, VGE=±20V
-1.4
2.0
VCC=300V, IC=600A , VGE=±15V
2680
nC
27.0
nF
3.0
nF
2.4
nF
VCC=300V, IC=600A
260
ns
Rise Time
RG =2.4Ω,VGE=±15V
80
ns
td(off)
Turn - off Delay Time
TJ=125°C
420
ns
tf
Fall Time
Inductive Load
60
ns
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
VCE=25V, VGE=0V, f =1MHz
VCC=300V, IC=600A
TJ=25°C
9.8
mJ
RG =2.4Ω
TJ=125°C
15.0
mJ
VGE=±15V
TJ=25°C
14.3
mJ
Inductive Load
TJ=125°C
21.9
mJ
Free-Wheeling Diode
IF=600A , VGE=0V, TJ=25°C
1.55
IF=600A , VGE=0V, TJ=125°C
1.35
V
Reverse Recovery Time
IF=600A , VR=300V
260
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-2000A/μs
240
A
Qrr
Reverse Recovery Charge
TJ=125°C
42
µC
5
KΩ
VF
Forward Voltage
trr
1.95
V
NTC-Characteristic Values
R25
Rated Resistance
TC=25°C
ΔR/R
Deviation of R100
TC=100°C, R100=493Ω
P25
Power Dissipation
TC=25°C
-5
5
%
20
mW
Max.
Unit
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.06
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.10
K /W
Torque
Module-to-Sink
Recommended（M5）
2.5
5
N· m
Torque
Module Electrodes
Recommended（M6）
3
5
N· m
Weight
346
g
MIMMG600WB060B6N
1200
1200
1000
1000
VGE=15V
800
TJ =25°C
600
TJ =125°C
IC (A)
IC (A)
800
VCE=20V
600
400
400
200
200
TJ =125°C
0
0
0
3.5
2.5
2
3
VCE(sat)（V）
Figure1. Typical Output characteristics
0.5
1
1.5
60
4
Eon Eoff (mJ)
30
Eoff
20
0
0
30
Eoff
20
10
0
600 800 1000 1200
IC（A）
Figure3. Switching Energy vs. Collector Current
200
10000
Eon
40
Eon
10
VCC=300V
IC=600A
VGE=±15V
TJ =125°C
50
40
9
12
18
15
RG（ohm）
Figure4. Switching Energy vs. Gate Resistor
400
VCC=300V
RG=2.4ohm
VGE=±15V
TJ =125°C
0
3
6
10000
1000
td(off)
td(on)
td(off)
t (ns)
1000
td(on)
100
100 tr
tr
tf
tf
10
0
8
6
10
12
14
VGE（V）
Figure2. Typical Transfer characteristics
2
60
VCC=300V
RG=2.4ohm
VGE=±15V
TJ =125°C
50
Eon Eoff (mJ)
0
70
70
t (ns)
TJ =25°C
300 450 600 750 900 1050
IC（A）
Figure5. Switching Times vs. Collector Current
150
10
VCC=300V
IC=600A
VGE=±15V
TJ =125°C
14
6
8
10 12
RG（ohm）
Figure6. Switching Times vs. Gate Resistor
0
2
4
MIMMG600WB060B6N
100000
25
20
VCC=300V
IC=600A
TJ =25°C
10000
R (Ω)
VGE (V)
15
10
1000
5
0
0
1000 1500 2000 2500 3000
Qg（nC）
Figure7. Gate Charge characteristics
1400
75
100 125
150
175
TC（°C）
Figure8. NTC- Temperature Characteristic
IC Chip
ICsc (A)
IC Modul
1200
IC Modul
600
800
400
TJ =125°C
TC =25°C
VGE =15V
100
TJ =125°C
TC =25°C
VGE =15V
tsc≤10µs
400
0
200 300 400 500 600 700
VCE（V）
Figure10. Short Circuit Safe Operating Area
300 400 500 600 700
VCE（V）
Figure9. Reverse Biased Safe Operating Area
200
840
0
100
1200
TJ =150°C
VGE ≥15V
720
1000
600
800
480
IF (A)
IC(A)
TJ =125°C
360
600
400
240
TJ =25°C
200
120
0
0
50
1600
800
0
0
25
2000
IC Chip
1000
200
0
2400
1200
ICpuls (A)
100
500
50
75 100 125 150
TC Case Temperature(°C)
Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5
3
3.5
VF（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG600WB060B6N
1
1
-1
10-1
ZthJC (K/W)
ZthJC (K/W)
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-2
10-3
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-2
10-3
-4
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
10
10-3
10-4
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
10/11
3
4
9
7
8
1
2
Figure15. Circuit Diagram
5
6