NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3906 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3904 s1A Q68000-A4416 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 60 Emitter-base voltage VEB0 6 Collector current IC 200 mA Total power dissipation, TS = 69 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 315 Junction - soldering point Rth JS ≤ 245 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 3904 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA V(BR)CE0 40 – – Collector-base breakdown voltage IC = 10 µA V(BR)CB0 60 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 6 – – Collector-base cutoff current VCB = 30 V ICB0 – – 50 DC current gain IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V1) IC = 50 mA, VCE = 1 V1) IC = 100 mA, VCE = 1 V1) hFE 40 70 100 60 30 – – – – – – – 300 – – Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 V nA – V – – – – 0.2 0.3 0.65 – – – 0.85 0.95 SMBT 3904 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT 300 – – MHz Output capacitance VCB = 5 V, f = 1 MHz Cobo – – 4 pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – – 8 Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz h11e 1 – 10 kΩ Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h12e 0.5 – 8 10– 4 Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h21e 100 – 400 – Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz h22e 1 – 40 µS Noise figure IC = 100 µA, VCE = 5 V, RS = 1 kΩ, f = 1 kHz F – – 5 dB td tr – – – – 35 35 ns ns tstg tf – – – – 200 50 ns ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA VBE(off) = 0.5 V Delay time Rise time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Storage time Fall time (see diagrams) Semiconductor Group 3 SMBT 3904 Test circuits Delay and rise time Storage and fall time Semiconductor Group 4 SMBT 3904 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBE sat, VCE sat) Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 10 V, normalized Semiconductor Group 5 SMBT 3904 Short-circuit forward current transfer ratio h21e = f (IC) VCE = 10 V, f = 1 MHz Open-circuit output admittance h22e = f (IC) VCE = 10 V, f = 1 MHz Delay time td = f (IC) Rise time tr = f (IC) Storage time tstg = f (IC) Semiconductor Group 6 SMBT 3904 Fall time tf = f (IC) Rise time tr = f (IC) Input impedance h11e = f (IC) VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio h12e = f (IC) VCE = 10 V, f = 1 kHz Semiconductor Group 7