RENESAS RJK0346DPA-00-J0

Preliminary Datasheet
RJK0346DPA
Silicon N Channel Power MOS FET
Power Switching
REJ03G1642-0210
Rev.2.10
May 12, 2010
Features





High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 1.5 m typ. (at VGS = 10 V)
 Pb-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Ratings
30
20
65
260
65
Unit
V
V
A
A
A
IAP Note 2
EAR Note 2
Pch Note3
ch-C
Tch
Tstg
35
122.5
65
1.92
150
–55 to +150
A
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
REJ03G1642-0210 Rev.2.10
May 12, 2010
Page 1 of 6
RJK0346DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.5
1.9
130
7650
1500
470
1.2
49
18.7
10.5
15
7
86.5
Max
—
0.1
1
2.5
2.0
2.7
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
A
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
—
—
—
20
0.80
45
—
1.04
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = 20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 32.5 A, VGS = 10 V Note4
ID = 32.5 A, VGS = 4.5 V Note4
ID = 32.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 65 A
VGS = 10 V, ID = 32.5 A,
VDD  10 V, RL = 0.31 ,
Rg = 4.7 
IF = 65 A, VGS = 0 Note4
IF = 65 A, VGS = 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
REJ03G1642-0210 Rev.2.10
May 12, 2010
Page 2 of 6
RJK0346DPA
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
ID (A)
1000
60
10
s
20
50
100
150
10
1
Tc = 25°C
0.1 1 shot Pulse
0.1
1
200
10
100
Drain to Source Voltage
Tc (°C)
VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
100
100
Pulse Test
VDS = 10 V
Pulse Test
3.0 V
ID (A)
4.5 V
80
PW = 10 ms
Operation in
this area is
limited by RDS(on)
on
ati
er
Op
Drain Current
40
Case Temperature
10 V
60
80
60
Drain Current
ID (A)
0μ
1 ms
0
Drain Current
μs
10
100
DC
Channel Dissipation
Pch (W)
80
2.8 V
40
VGS = 2.6 V
20
40
25°C
20
Tc = 75°C
–25°C
2
4
6
Drain to Source Voltage
8
Drain to Source Saturation Voltage
VDS (on) (mV)
Pulse Test
60
40
ID = 20 A
20
10 A
5A
0
4
8
12
Gate to Source Voltage
REJ03G1642-0210 Rev.2.10
May 12, 2010
16
20
VGS (V)
1
2
3
4
Gate to Source Voltage
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
80
0
10
Static Drain to Source On State Resistance
RDS (on) (mΩ)
0
5
VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
10
Pulse Test
3
VGS = 4.5 V
10 V
1
0.3
0.1
1
3
10
30
Drain Current
100
ID
300 1000
(A)
Page 3 of 6
Preliminary
Static Drain to Source On State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
10
10000
Pulse Test
Ciss
3000
8
Capacitance C (pF)
Static Drain to Source On State Resistance
RDS (on) (mΩ)
RJK0346DPA
6
ID = 5 A, 10 A, 20 A
4
VGS = 4.5 V
2
Coss
1000
Crss
300
100
30
0
–25
5 A, 10 A, 20 A
10 V
0
25
50
75
10
0
100 125 150
Case Temperature
Tc
(°C)
12
VDS
20
8
10
4
VDD = 25 V
10 V
0
0
40
80
Gate Charge
120
30
0
200
160
100
Reverse Drain Current IDR (A)
30
VGS (V)
16
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
VGS
VDD = 25 V
10 V
40
20
Reverse Drain Current vs.
Source to Drain Voltage
20
ID = 65 A
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
50
VGS = 0
f = 1 MHz
Pulse Test
10 V
80
5V
60
40
VGS = 0, –5V
20
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Qg (nc)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
200
IAP = 35 A
VDD = 15 V
160
duty < 0.1 %
Rg ≥ 50 Ω
120
80
40
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1642-0210 Rev.2.10
May 12, 2010
Page 4 of 6
RJK0346DPA
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.3
0.5
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 1.92°C/W, Tc = 25°C
0.1
0.05
2
0.0
se
ul
1
0
0. ot p
h
1s
0.03
0.01
10 μ
D=
PDM
PW
T
PW
T
100 μ
1m
100 m
10 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
VDS
Monitor
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 10 V
90%
td(on)
REJ03G1642-0210 Rev.2.10
May 12, 2010
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK0346DPA
Preliminary
Package Dimensions
JEITA Package Code
⎯
RENESAS Code
PWSN0008DC-A
Previous Code
WPAK(2)V
MASS[Typ.]
0.07g
0.8Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK(2)
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.6 ± 0.2
+0.1
-0.3
6.1
3.9 ± 0.2
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.545Typ
0.7Typ
0.04Min
0.4 ± 0.06
4.90 ± 0.1
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part No.
RJK0346DPA-00-J0
Quantity
2500 pcs
REJ03G1642-0210 Rev.2.10
May 12, 2010
Shipping Container
Taping
Page 6 of 6
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