RENESAS RJK5014DPK_09

RJK5014DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1458-0200
Rev.2.00
Oct 20, 2009
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
500
±30
19
38
19
38
5
1.3
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
RJK5014DPK
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
500
—
—
3.0
—
Typ
—
—
—
—
0.315
Max
—
1
±0.1
4.5
0.380
Unit
V
μA
μA
V
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
1800
190
24
36
41
93
39
46
9
20
0.91
—
—
—
—
—
—
—
—
—
—
1.55
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
320
—
ns
Body-drain diode reverse recovery time
Notes: 4. Pulse test
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 2 of 6
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 9.5 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 9.5 A
VGS = 10 V
RL = 26.3 Ω
Rg = 10 Ω
VDD = 400 V
VGS = 10 V
ID = 19 A
IF = 19 A, VGS = 0 Note4
IF = 19 A, VGS = 0
diF/dt = 100 A/μs
RJK5014DPK
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
100
10
=
10
0
Ta = 25°C
Pulse Test
Drain Current ID (A)
PW
Drain Current ID (A)
40
10 μs
μs
1
Operation in this
area is limited by
RDS(on)
0.1
0.01
1
10
100
5.6 V
5.4 V
10
5.2 V
0
4
8
12
16
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
VDS = 10 V
Pulse Test
5
Tc = −25°C
2
25°C
75°C
1
0.5
0.2
0
2
4
6
8
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
10
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
100
1000
Reverse Recovery Time trr (ns)
1
0.8
20
Drain to Source Voltage VDS (V)
Drain to Source on State Resistance
RDS(on) (Ω)
Drain Current ID (A)
20
Drain to Source Voltage VDS (V)
10
Static Drain to Source on State Resistance
RDS(on) (Ω)
5.8 V
0
1000
20
0.1
6V
30
VGS = 5 V
Ta = 25°C
1 shot
0.001
0.1
10 V
VGS = 10 V
ID = 8 A
Pulse Test
0.6
0.4
0.2
0
-25
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 3 of 6
1
10
Reverse Drain Current IDR (A)
100
RJK5014DPK
Typical Capacitance vs.
Drain to Source Voltage (Typical)
100
Coss
Crss
10
1
0
VGS = 0
f = 1 MHz
Ta = 25°C
50
100
150
200
Reverse Drain Current IDR (A)
VGS
VDD = 400 V
250 V
100 V
600
400
VDS
200
20
40
0
60
80
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
20
10
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 4 of 6
12
4
VDD = 400 V
250 V
100 V
Gate Charge Qg (nC)
30
16
8
Drain to Source Voltage VDS (V)
VGS = 0 V
Ta = 25 °C
Pulse Test
0
ID = 19 A
Ta = 25 °C
0
0
250
40
0
800
5
100
VDS = 10 V
4
3
ID = 10 mA
1 mA
0.1 mA
2
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Gate to Source Voltage VGS (V)
1000
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
Ciss
Drain to Source Voltage VDS (V)
10000
Dynamic Input Characteristics (Typical)
RJK5014DPK
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
0.01
10 μ
1s
t
ho
pu
D=
lse
PW
T
PW
T
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
VDD
= 250 V
Vin
Vout
10%
10%
10%
90%
td(on)
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 5 of 6
tr
90%
td(off)
tf
RJK5014DPK
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part No.
RJK5014DPK-00-T0
Quantity
360 pcs
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 6 of 6
Shipping Container
Box (Tube)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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