TRF370417 www.ti.com SLWS213 – JANUARY 2010 50-MHz TO 6-GHz QUADRATURE MODULATOR Check for Samples: TRF370417 FEATURES APPLICATIONS • • • • • • • • • • • • 1 • • • • • • • • 76-dBc Single-Carrier WCDMA ACPR at –8 dBm Channel Power Low Noise Floor: –162.3 dBm/Hz at 2140 MHz OIP3 of 26.5 dBm at 2140 MHz P1dB of 12 dBm at 2140 MHz Carrier Feedthrough of –38 dBm at 2140 MHz Side-Band Suppression of –50 dBc at 2140 MHz Single Supply: 4.5-V–5.5-V Operation Silicon Germanium Technology 1.7-V CM at I, Q Baseband Inputs Cellular Base Station Transceiver CDMA: IS95, UMTS, CDMA2000, TD-SCDMA TDMA: GSM, IS-136, EDGE/UWC-136 Multicarrier GSM WiMAX: 802.16d/e 3GPP: LTE Point-to-Point (P2P) Microwave Wideband Software-Defined Radio Public Safety: TETRA/APC025 Communication-System Testers Cable Modem Termination System (CMTS) VCC GND BBIN BBIP GND GND 24 23 22 21 20 19 RGE PACKAGE (TOP VIEW) LON 4 15 NC GND 5 14 GND NC 6 13 NC 12 RF_OUT GND 16 11 3 GND LOP 10 GND BBQP 17 9 2 BBQN GND 8 VCC GND 18 7 1 NC NC P0024-04 DESCRIPTION The TRF370417 is a low-noise direct quadrature modulator, capable of converting complex modulated signals from baseband or IF directly up to RF. The TRF370417 is a high-performance, superior-linearity device that operates at RF frequencies of 50 MHz through 6 GHz. The modulator is implemented as a double-balanced mixer. The RF output block consists of a differential to single-ended converter and an RF amplifier capable of driving a single-ended 50-Ω load without any need of external components. The TRF370417 requires a 1.7-V common-mode voltage for optimum linearity performance. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated TRF370417 SLWS213 – JANUARY 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. VCC GND BBIN BBIP GND GND 24 23 22 21 20 19 Functional Block Diagram NC 1 18 VCC GND 2 17 GND LOP 3 16 RF_OUT S 0/90 12 NC GND 13 11 6 GND NC 10 GND BBQP 14 9 5 BBQN GND 8 NC GND 15 7 4 NC LON B0175-01 NOTE: NC = No connection DEVICE INFORMATION TERMINAL FUNCTIONS TERMINAL NAME NO. I/O DESCRIPTION BBIN 22 I In-phase negative input BBIP 21 I In-phase positive input BBQN 9 I Quadrature-phase negative input BBQP 10 I Quadrature-phase positive input GND 2, 5, 8, 11, 12, 14, 17, 19, 20, 23 – Ground LON 4 I Local oscillator negative input LOP 3 I Local oscillator positive input NC 1, 6, 7, 13, 15 – No connect 16 O RF output 18, 24 – Power supply RF_OUT VCC 2 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE (2) UNIT Supply voltage range –0.3 V to 6 V TJ Operating virtual junction temperature range –40 to 150 °C TA Operating ambient temperature range –40 to 85 °C Tstg Storage temperature range –65 to 150 °C ESD Rating HBM 75 V ESD Rating CDM 75 V (1) (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) VCC Power-supply voltage MIN NOM MAX 4.5 5 5.5 UNIT V THERMAL CHARACTERISTICS PARAMETER TEST CONDITIONS VALUE UNIT 29.4 °C/W Thermal resistance, junction-to-case 18.6 °C/W Thermal resistance, junction-to-board 14 °C/W RqJA Thermal resistance, junction-to-ambient RqJC RqJB High-K board, still air ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 205 245 mA 6 GHz 12 dBm DC Parameters ICC Total supply current (1.7 V CM) TA = 25°C LO Input (50-Ω, Single-Ended) LO frequency range fLO 0.05 LO input power –5 LO port return loss 0 15 dB Baseband Inputs VCM I and Q input dc common voltage BW 1-dB input frequency bandwidth 1 GHz Input impedance, resistance 5 kΩ Input impedance, parallel capacitance 3 pF ZI(single ended) 1.7 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 3 TRF370417 SLWS213 – JANUARY 2010 www.ti.com RF OUTPUT PARAMETERS over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT fLO = 70 MHz at 8 dBm G Voltage gain P1dB Output compression point Output rms voltage over input I (or Q) rms voltage IP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone IP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone Carrier feedthrough Unadjusted Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –8 dB 7.3 dBm 22 dBm 69 dBm –46 dBm –27.5 dBc fLO = 400 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Carrier feedthrough Sideband suppression Output rms voltage over input I (or Q) rms voltage –1.9 dB 11 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 24.5 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 68 dBm Unadjusted –38 dBm Unadjusted; fBB = 4.5, 5.5 MHz –40 dBc Output rms voltage over input I (or Q) rms voltage –2.5 fLO = 945.6 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Carrier feedthrough Sideband suppression dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 25 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 65 dBm Unadjusted –40 dBm Unadjusted; fBB = 4.5, 5.5 MHz –42 dBc Output return loss Output noise floor dB 11 9 ≥13 MHz offset from fLO; Pout = –5 dBm –161.2 dB dBm/Hz fLO = 1800 MHz at 8 dBm G Voltage gain P1dB Output compression point Output rms voltage over input I (or Q) rms voltage IP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone IP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone Carrier feedthrough Unadjusted Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –50 dBc Output return loss Output noise floor 4 –2.5 dBm 26 dBm 60 dBm –40 dBm 8 ≥13 MHz offset from fLO; Pout = –5 dBm Submit Documentation Feedback dB 12 –161.5 dB dBm/Hz Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 RF OUTPUT PARAMETERS (continued) over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT fLO = 1960 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Carrier feedthrough Sideband suppression Output rms voltage over input I (or Q) rms voltage dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 26.5 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 60 dBm Unadjusted –38 dBm Unadjusted; fBB = 4.5, 5.5 MHz –50 dBc 8 dB Output noise floor ≥13 MHz offset from fLO; Pout = –5 dBm Error vector magnitude (rms) 1 EDGE signal, Pout = –5 dBm (1) Adjacent-channel power ratio ACPR Alternate-channel power ratio dB 12 Output return loss EVM –2.5 –162 1 WCDMA signal; Pout = –8 dBm (2) –76 (3) –74 1 WCDMA signal; Pout = –8 dBm 2 WCDMA signals; Pout = –11 dBm per carrier (3) –68 4 WCDMA signals; Pout = –14 dBm per carrier (3) –67 1 WCDMA signal; Pout = –8 dBm (2) –80 (3) –78 1 WCDMA signal; Pout = –8 dBm dBm/Hz 0.43% 2 WCDMA signals; Pout = –11 dBm per carrier (3) –72 4 WCDMA signals; Pout = –14 dBm per carrier (3) –69 Output rms voltage over input I (or Q) rms voltage –2.4 dBc dBc fLO = 2140 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Carrier feedthrough Sideband suppression dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 26.5 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 66 dBm Unadjusted –38 dBm Unadjusted; fBB = 4.5, 5.5 MHz –50 dBc Output return loss Output noise floor Adjacent-channel power ratio ACPR (1) (2) (3) 8.5 ≥13 MHz offset from fLO ; Pout = –5 dBm –162.3 1 WCDMA signal; Pout = –8 dBm (2) –76 (3) –72 1 WCDMA signal; Pout = –8 dBm 2 WCDMA signal; Pout = –11 dBm per carrier (3) –67 4 WCDMA signals; Pout = –14 dBm per carrier (3) –66 (2) –80 1 WCDMA signal; Pout = –8 dBm (3) –78 2 WCDMA signal; Pout = –11 dBm (3) –74 4 WCDMA signals; Pout = –14 dBm per carrier (3) –68 1 WCDMA signal; Pout = –8 dBm Alternate-channel power ratio dB 12 dB dBm/Hz dBc dBc The contribution from the source of about 0.28% is not de-embedded from the measurement. Measured with DAC5687 as source generator; with 2.5 MHz LPF. Measured with DAC5687 as source generator; no external BB filters are used. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 5 TRF370417 SLWS213 – JANUARY 2010 www.ti.com RF OUTPUT PARAMETERS (continued) over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT fLO = 2500 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Carrier feedthrough Sideband suppression EVM Error vector magnitude (rms) Output rms voltage over input I (or Q) rms voltage –1.6 dB 13 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 29 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 65 dBm Unadjusted –37 dBm Unadjusted; fBB = 4.5, 5.5 MHz –47 dBc WiMAX 5-MHz carrier, Pout = –8 dBm (4) –47 dB –45 dB 0.6 dB WiMAX 5-MHz carrier, Pout = 0 dBm (4) fLO = 3500 MHz at 8 dBm G Voltage gain P1dB Output compression point 13.5 dBm IP3 Output IP3 fBB = 4.5, 5.5 MHz 25 dBm IP2 Output IP2 fBB = 4.5, 5.5 MHz 65 dBm Carrier feedthrough Unadjusted –35 dBm Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –36 dBc WiMAX 5-MHz carrier, Pout = –8 dBm (4) –47 dB WiMAX 5-MHz carrier, Pout = 0 dBm (4) –43 dB Output rms voltage over input I (or Q) rms voltage 0.2 dB 12 dBm EVM Error vector magnitude (rms) Output rms voltage over input I (or Q) rms voltage fLO = 4000 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 fBB = 4.5, 5.5 MHz 22.5 dBm IP2 Output IP2 fBB = 4.5, 5.5 MHz 60 dBm Carrier feedthrough Unadjusted –36 dBm Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –36 dBc Output rms voltage over input I (or Q) rms voltage –5.5 dB 12.9 dBm fLO = 5800 MHz at 4 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 fBB = 4.5, 5.5 MHz 25 dBm IP2 Output IP2 fBB = 4.5, 5.5 MHz 55 dBm Carrier feedthrough Unadjusted –31 dBm Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –36 dBc Error-vector magnitude WiMAX 5-MHz carrier, Pout = –12 dBm (4) –40 dB EVM (4) 6 Sideband suppression optimized with LO drive level; EVM contribution from instrument is not accounted for. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 TYPICAL CHARACTERISTICS VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). OUTPUT POWER vs FREQUENCY AND TEMPERATURE 15 2 10 0 POUT − Output Power − dBm POUT − Output Power at 2.14 GHz − dBm OUTPUT POWER vs BASEBAND VOLTAGE 5 0 −5 −10 −2 −4 25°C −6 85°C −8 VIN = 98 mVrms SE LO = 4 dBm VCC = 5 V −10 −15 −12 −20 0.01 0.1 0 1 VBB − Baseband Voltage Single-Ended RMS − V 1000 2000 3000 4000 5000 6000 f − Frequency − MHz G002 G001 Figure 1. Figure 2. OUTPUT POWER vs FREQUENCY AND SUPPLY VOLTAGE OUTPUT POWER vs FREQUENCY AND LO POWER 2 2 5.5 V −2 5V −4 4.5 V −6 −8 VIN = 98 mVrms SE LO = 4 dBm TA = 25°C −10 0 dBm 0 POUT − Output Power − dBm 0 POUT − Output Power − dBm –40°C –5 dBm −2 4 dBm −4 −6 −8 −10 −12 VIN = 98 mVrms SE VCC = 5 V TA = 25°C 8 dBm −12 0 1000 2000 3000 4000 5000 6000 0 f − Frequency − MHz 1000 2000 3000 4000 5000 6000 f − Frequency − MHz G003 Figure 3. G004 Figure 4. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 7 TRF370417 SLWS213 – JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). P1dB vs FREQUENCY AND TEMPERATURE P1dB vs FREQUENCY AND SUPPLY VOLTAGE 20 20 LO = 4 dBm VCC = 5 V 25°C 16 16 14 14 12 10 LO = 4 dBm TA = 25°C 18 P1dB − dBm P1dB − dBm 18 85°C 5.5 V 12 10 5V 4.5 V –40°C 8 8 6 6 4 4 0 1000 2000 3000 4000 5000 6000 0 1000 f − Frequency − MHz 2000 3000 4000 5000 6000 f − Frequency − MHz G005 G006 Figure 5. Figure 6. P1dB vs FREQUENCY AND LO POWER OIP3 vs FREQUENCY AND TEMPERATURE 20 40 25°C 18 –5 dBm –40°C 35 16 0 dBm 30 12 OIP3 − dBm P1dB − dBm 14 4 dBm 10 8 dBm 8 25 20 85°C 15 6 10 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 4 5 VCC = 5 V TA = 25°C 2 0 0 0 1000 2000 3000 4000 5000 6000 0 f − Frequency − MHz 1000 2000 3000 G007 Figure 7. 8 4000 5000 6000 f − Frequency − MHz G008 Figure 8. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). OIP3 vs FREQUENCY AND SUPPLY VOLTAGE OIP3 vs FREQUENCY AND LO POWER 40 40 0 dBm 4 dBm 35 30 30 OIP3 − dBm OIP3 − dBm 5V 35 25 4.5 V 20 5.5 V 15 25 –5 dBm 20 8 dBm 15 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm TA = 25°C 10 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone VCC = 5 V TA = 25°C 10 5 5 0 1000 2000 3000 4000 5000 6000 0 1000 2000 f − Frequency − MHz 3000 4000 5000 6000 f − Frequency − MHz G009 G010 Figure 9. Figure 10. OIP2 vs FREQUENCY AND TEMPERATURE OIP2 vs FREQUENCY AND SUPPLY VOLTAGE 100 100 90 90 5V 25°C –40°C 70 60 85°C 50 40 70 60 50 5.5 V 40 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 30 4.5 V 80 OIP2 − dBm OIP2 − dBm 80 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm TA = 25°C 30 20 20 0 1000 2000 3000 4000 5000 6000 0 1000 f − Frequency − MHz 2000 3000 4000 5000 6000 f − Frequency − MHz G011 Figure 11. G012 Figure 12. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 9 TRF370417 SLWS213 – JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). OIP2 vs FREQUENCY AND LO POWER UNADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE 0 CS − Unadjusted Carrier Feedthrough − dBm 100 90 4 dBm 0 dBm OIP2 − dBm 80 70 60 50 –5 dBm 8 dBm 40 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone VCC = 5 V TA = 25°C 30 LO = 4 dBm VCC = 5 V −10 –40°C −20 −30 −40 −50 −60 25°C −70 85°C −80 20 0 1000 2000 3000 4000 5000 0 6000 1000 2000 3000 4000 5000 6000 f − Frequency − MHz f − Frequency − MHz G014 G013 Figure 13. Figure 14. UNADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND SUPPLY VOLTAGE UNADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND LO POWER 0 LO = 4 dBm TA = 25°C −10 CS − Unadjusted Carrier Feedthrough − dBm CS − Unadjusted Carrier Feedthrough − dBm 0 5V −20 5.5 V −30 −40 −50 −60 4.5 V −70 VCC = 5 V TA = 25°C −10 8 dBm −20 –5 dBm −30 −40 −50 4 dBm 0 dBm −60 −80 0 1000 2000 3000 4000 5000 0 6000 1000 2000 3000 f − Frequency − MHz 5000 6000 G016 G015 Figure 15. 10 4000 f − Frequency − MHz Figure 16. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). UNADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE UNADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND SUPPLY VOLTAGE 0 SS − Unadjusted Sideband Suppression − dBc SS − Unadjusted Sideband Suppression − dBc 0 −10 −20 –40°C −30 25°C −40 −50 −60 −70 85°C LO = 4 dBm VCC = 5 V −80 −10 −20 4.5 V −30 −40 −50 −60 5V −70 LO = 4 dBm TA = 25°C 5.5 V −80 0 1000 2000 3000 4000 5000 6000 0 1000 2000 f − Frequency − MHz 3000 4000 5000 6000 f − Frequency − MHz G018 Figure 18. UNADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND LO POWER NOISE AT 13-MHz OFFSET (dBm/Hz) vs FREQUENCY AND TEMPERATURE 0 −150 −10 −152 8 dBm Noise at 13-MHz Offset − dBm/Hz SS − Unadjusred Sideband Suppression − dBc G017 Figure 17. −20 –5 dBm −30 −40 −50 −60 4 dBm −70 VCC = 5 V TA = 25°C 1000 2000 3000 4000 85°C −156 −158 −160 −162 −164 25°C –40°C −166 −168 0 dBm −80 0 −154 POUT = −5 dBm LO = 8 dBm VCC = 5 V 5000 −170 0.8 6000 1.4 f − Frequency − MHz G019 Figure 19. 2.0 2.6 3.2 3.8 4.4 5.0 5.6 f − Frequency − GHz G020 Figure 20. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 11 TRF370417 SLWS213 – JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). NOISE AT 13-MHz OFFSET (dBm/Hz) vs FREQUENCY AND SUPPLY VOLTAGE NOISE AT 13-MHz OFFSET (dBm/Hz) vs OUTPUT POWER −154 −150 −154 −156 −156 Noise at 13-MHz Offset − dBm/Hz Noise at 13-MHz Offset − dBm/Hz −152 POUT = −5 dBm LO = 8 dBm TA = 25°C 5.5 V −158 −160 −162 5V −164 4.5 V −166 VCC = 5 V LO = 8 dBm TA = 25°C 5600 MHz −158 948.5 MHz −160 −162 2140 MHz −164 1960 MHz −168 −170 0.8 1800 MHz 1.4 2.0 2.6 3.2 3.8 4.4 5.0 −166 −10 −9 −8 −7 −6 −5 −4 −3 −2 −1 0 5.6 G021 2 Figure 21. Figure 22. ADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE ADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE 3 4 5 G022 0 0 Adj at 70 MHz @ 25°C LO = 4 dBm VCC = 5 V −10 CS − Adjusted Carrier Feedthrough − dBm CS − Adjusted Carrier Feedthrough − dBm 1 POUT − Output Power − dBm f − Frequency − GHz −20 −30 −40 –40°C −50 −60 −70 25°C −10 Adj at 942.6 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 −30 85°C −40 −50 −60 25°C –40°C −70 85°C −80 60 62 64 66 68 70 72 74 76 78 80 −80 900 910 920 930 940 950 960 970 980 990 1000 f − Frequency − MHz f − Frequency − MHz G023 Figure 23. 12 G024 Figure 24. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). ADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE ADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE 0 −10 Adj at 2140 MHz @ 25°C LO = 4 dBm VCC = 5 V CS − Adjusted Carrier Feedthrough − dBm CS − Adjusted Carrier Feedthrough − dBm 0 −20 –40°C −30 85°C −40 −50 −60 25°C −70 −10 Adj at 2500 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 –40°C −30 −40 −50 −60 25°C −70 85°C −80 2040 2080 2120 2160 2200 −80 2400 2240 2440 2480 2520 2560 f − Frequency − MHz G026 G025 Figure 25. Figure 26. ADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE ADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE 0 Adj at 3500 MHz @ 25°C LO = 4 dBm VCC = 5 V CS − Adjusted Carrier Feedthrough − dBm CS − Adjusted Carrier Feedthrough − dBm 0 −10 2600 f − Frequency − MHz −20 –40°C −30 −40 −50 25°C −60 85°C −70 −80 3400 3440 3480 3520 3560 3600 −10 Adj at 5800 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 –40°C −30 −40 −50 25°C 85°C −60 −70 −80 5700 5740 5780 5820 5860 5900 f − Frequency − MHz f − Frequency − MHz G028 G027 Figure 27. Figure 28. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 13 TRF370417 SLWS213 – JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE 0 Adj at 70 MHz @ 25°C LO = 4 dBm VCC = 5 V −10 SS − Adjusted Sideband Suppression − dBc SS − Adjusted Sideband Suppression − dBc 0 −20 −30 −40 −50 85°C −60 25°C –40°C −70 −80 60 62 64 66 68 70 72 74 76 78 −10 Adj at 942.6 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 −30 25°C –40°C −40 −50 −60 85°C −70 −80 900 910 920 930 940 950 960 970 980 990 1000 80 f − Frequency − MHz f − Frequency − MHz G029 G030 Figure 29. Figure 30. ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE −10 0 Adj at 2140 MHz @ 25°C LO = 4 dBm VCC = 5 V SS − Adjusted Sideband Suppression − dBc SS − Adjusted Sideband Suppression − dBc 0 −20 −30 −40 –40°C 85°C −50 −60 25°C −70 −80 2040 2080 2120 2160 2200 2240 −10 Adj at 2500 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 −30 –40°C −40 −50 −60 −80 2400 f − Frequency − MHz 2440 2480 2520 2560 2600 f − Frequency − MHz G031 Figure 31. 14 25°C 85°C −70 G032 Figure 32. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE −10 0 Adj at 3500 MHz @ 25°C LO = 4 dBm VCC = 5 V SS − Adjusted Sideband Suppression − dBc SS − Adjusted Sideband Suppression − dBc 0 −20 −30 –40°C −40 −50 −60 −70 85°C −80 3400 3440 3480 −10 Adj at 5800 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 –40°C −30 −40 −50 −60 25°C 85°C −70 25°C 3520 3560 −80 5700 3600 5740 f − Frequency − MHz 5780 5820 5860 G033 G034 Figure 33. Figure 34. OIP3 vs COMMON-MODE VOLTAGE at 948.5 MHz OIP3 vs COMMON-MODE VOLTAGE at 1800 MHz 32 30 –40°C 28 30 26 28 85°C 85°C 24 OIP3 − dBm OIP3 − dBm 25°C 22 20 18 –40°C 22 20 18 16 12 25°C 26 24 14 5900 f − Frequency − MHz 16 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 10 1.40 1.45 1.50 1.55 1.60 1.65 14 12 1.70 1.75 1.80 VCM − Common-Mode Voltage − V fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 10 1.40 1.45 1.50 G035 Figure 35. 1.55 1.60 1.65 1.70 1.75 1.80 VCM − Common-Mode Voltage − V G036 Figure 36. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 15 TRF370417 SLWS213 – JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). OIP3 vs COMMON-MODE VOLTAGE at 2140 MHz OIP3 vs COMMON-MODE VOLTAGE at 5800 MHz 40 40 37 37 34 34 31 31 28 28 OIP3 − dBm OIP3 − dBm 25°C 25 22 –40°C 85°C 19 16 13 22 85°C 13 1.55 1.60 1.65 –40°C 10 1.40 1.45 1.50 1.70 1.75 1.80 G037 1.70 1.75 1.80 Figure 37. Figure 38. OIP3 vs TOTAL OUTPUT POWER ADJACENT CHANNEL POWER RATIO vs OUTPUT POWER at 1960 MHz G038 −60 ACPR − Adjacent Channel Power Ratio − dBc fBB = 4.5, 5.5 MHz LO = 4 dBm VCC = 5 V TA = 25°C 1800 MHz 30 25 948.5 MHz 20 15 −10 −8 −6 −4 −2 0 2 POUT − Total Output Power − dBm −63 −66 −69 Adj −72 −75 −78 −81 −84 Alt −87 −90 −20 4 One Carrier, WCDMA at 1960 MHz DAC5687 as Source w/ 2.5 MHz LPF −18 −16 −14 −12 −10 −8 POUT − Output Power − dBm G039 Figure 39. 16 1.55 1.60 1.65 VCM − Common-Mode Voltage − V 40 OIP3 − dBm 25 16 VCM − Common-Mode Voltage − V 10 −12 25°C 19 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 10 1.40 1.45 1.50 35 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V −6 −4 G040 Figure 40. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). ADJACENT CHANNEL POWER RATIO vs OUTPUT POWER at 2140 MHz OIP3 at 1960 MHz DISTRIBUTION 60 One Carrier, WCDMA at 2140 MHz DAC5687 as Source w/ 2.5 MHz LPF −63 50 −66 −69 40 −72 Distribution − % ACPR − Adjacent Channel Power Ratio − dBc −60 Adj −75 −78 30 20 −81 −84 10 Alt −87 −90 −20 0 −18 −16 −14 −12 −10 −8 −6 24 −4 POUT − Output Power − dBm 25 26 27 28 29 OIP3 − dBm G041 G042 Figure 41. Figure 42. OIP2 at 1960 MHz DISTRIBUTION UNADJUSTED CARRIER FEEDTHROUGH at 1960 MHz DISTRIBUTION 25 18 16 14 12 Distribution − % Distribution − % 20 15 10 10 8 6 4 5 2 0 56 58 60 62 64 66 68 70 0 72 −24 −28 −32 −36 −40 −44 −48 −52 −56 −60 −64 OIP2 − dBm G043 CS − Unadjusted Carrier Feedthrough − dBm Figure 43. G044 Figure 44. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 17 TRF370417 SLWS213 – JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). UNADJUSTED SIDEBAND SUPPRESSION at 1960 MHz DISTRIBUTION P1dB at 1800 MHz DISTRIBUTION 35 30 30 25 25 Distribution − % Distribution − % 20 15 20 15 10 10 5 5 0 0 11.4 −36 −40 −44 −48 −52 −56 −60 −64 −68 −72 −76 11.6 11.8 12 12.2 12.4 P1dB − dBm SS − Unadjusted Sideband Suppression − dBc G046 G045 Figure 45. Figure 46. APPLICATION INFORMATION AND EVALUATION BOARD Basic Connections • • • • • • • • • See Figure 47 for proper connection of the TRF3704 modulator. Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown on pins 4, 5, 6, and 7. Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND. Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm). This should be ac-coupled through a 100-pF capacitor. Terminate the ac-coupled LON with 50 Ω to GND. Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q. The differential baseband inputs should be set to the proper common-mode voltage of 1.7V. RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This pin should also be ac-coupled through a 100-pF capacitor. All NC pins can be left floating. ESD Sensitivity RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board (PCB). Follow these guidelines for optimal ESD protection: • Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore, customers’ ESD precautions should be consistent with these ratings. • The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly connect the device pins to off-board circuits. 18 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 DNI C10 DNI C11 .1uF .1uF J3 BBIN 2 3 4 5 1 TP3 GND BLK TP4 VCC2 R2 R3 0 0 SMA_END 5 4 3 2 1 SMA_END J4 BBIP TP2 VCC1 RED RED + C6 4.7uF C5 C4 1000pF 1000pF TP1 GND BLK + C7 4.7uF C15 C14 10pF 10pF J1 LOP VCC1 GND7 RF_OUT U1 NC5 TRF370x GND6 NC4 J7 RF_OUT 18 17 16 15 14 13 C3 C2 1 R1 100pF 0 SMA_END 1 C8 C9 1uF DNI 1uF DNI 7 8 9 10 11 12 J2 LON 100pF 2 3 4 5 SMA_END NC1 GND1 LOP LON GND2 NC2 NC3 GND3 BBQN BBQP GND4 GND5 1 2 3 4 5 6 5 4 3 2 2 3 4 5 25 24 23 22 21 20 19 100pF GND VCC2 GND10 BBIN BBIP GND9 GND8 C1 1 SMA_END TRF370333 0 DNI 0 TRF370315 0 J5 QN DNI TRF370417 0 R4 R5 0 0 1 SMA_END 2 3 4 5 DNI J6 QP 1 DNI DNI C12 C13 .1uF .1uF SMA_END 5 4 3 2 TRF370317 S0214-03 NOTE: DNI = Do not install. Figure 47. TRF3704 EVM Schematic Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 19 TRF370417 SLWS213 – JANUARY 2010 www.ti.com Figure 48 shows the top view of the TRF3704 EVM board. K001 Figure 48. TRF3704 EVM Board Layout Table 1. Bill of Materials for TRF370x EVM Item Number Quantity 1 3 C1, C2, C3 100 pF 0402 PANASONIC ECJ-0EC1H101J 2 2 C4, C5 1000 pF 0402 PANASONIC ECJ-0VC1H102J 3 2 C6, C7 4.7 mF TANT_A KERMET T491A475K016AS 4 0 C8, C9 1 mF 0402 PANASONIC ECJ0EC1H010C_DNI DNI 5 0 C10, C11, C12, C13 0.1 mF 0402 PANASONIC ECJ0EB1A104K_DNI DNI 6 2 C14, C15 10 pF 0402 MURATA GRM1555C1H100 JZ01D 7 7 J1, J2, J3, LOP J4, J5, J6, J7 SMA_SMEL_250x215 JOHNSON COMPONENTS 142-0711-821 8 2 R1 0 0402 PANASONIC ERJ-2GE0R00 OR EQUIVALENT 9 4 R2, R3, R4, R5 0 0402 PANASONIC ERJ-2GE0R00 OR EQUIVALENT 20 Reference Designator Value PCB Footprint Mfr. Name Submit Documentation Feedback Mfr. Part Number Note Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 Table 1. Bill of Materials for TRF370x EVM (continued) Item Number Quantity 10 1 Reference Designator Value PCB Footprint Mfr. Name Mfr. Part Number Note TRF370333 QFN_24_163x163_ 0p50mm TI TRF370333 For TRF370333 EVM, TI supplied TRF370317 QFN_24_163x163_ 0p50mm TI TRF370317 For TRF370317 EVM, TI supplied TRF370315 QFN_24_163x163_ 0p50mm TI TRF370315 For TRF370315 EVM, TI supplied TRF370417 QFN_24_163x163_ 0p50mm TI TRF370417 For TRF370417 EVM, TI supplied U1 11 2 TP1, TP3 BLK TP_THVT_100_RND KEYSTONE 5001K 12 2 TP2, TP4 RED TP_THVT_100_RND KEYSTONE 5000K GSM Applications The TRF370417 is suited for GSM and multicarrier GSM applications because of its high linearity and low noise level over the entire recommended operating range. It also has excellent EVM performance, which makes it ideal for the stringent GSM/EDGE applications. WCDMA Applications The TRF370417 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR) and noise density are critically important. Using Texas instruments’ DAC568X series of high-performance digital-to-analog converters as depicted in Figure 49, excellent ACPR levels were measured with one-, two-, and four-WCDMA carriers. See Electrical Characteristics, fLO = 1960 MHz and fLO = 2140 MHz for exact ACPR values. 16 TRF370x I/Q Modulator DAC5687 RF Out 16 CLK1 CLK2 VCXO TRF3761 PLL LO Generator CDCM7005 Clock Gen Ref Osc B0176-02 Figure 49. Typical Transmit Setup Block Diagram DAC-to-Modulator Interface Network For optimum linearity and dynamic range, the digital-to-analog converter (DAC) can interface directly with the modulator; however, the common-mode voltage of each device must be maintained. A passive interface circuit is used to transform the common-mode voltage of the DAC to the desired set-point of the modulator. The passive circuit invariably introduces some insertion loss between the two devices. In general, it is desirable to keep the insertion loss as low as possible to achieve the best dynamic range. Figure 50 shows the passive interconnect Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 21 TRF370417 SLWS213 – JANUARY 2010 www.ti.com circuit for two different topologies. One topology is used when the DAC (e.g., DAC568x) common mode is larger than the modulator. The voltage Vee is nominally set to ground, but can be set to a negative voltage to reduce the insertion loss of the network. The second topology is used when the DAC (e.g., DAC56x2) common mode is smaller than the modulator. Note that this passive interconnect circuit is duplicated for each of the differential I/Q branches. Vdd It DAC568x R1 R2 TRF370x 1.7V 3.3V R3 Id Vee Topology 1: DAC Vcm > TRF370x Vcm Vdd It DAC56x2 0.7V R1 TRF370x R2 1.7V R3 Id Topology 2: DAC Vcm < TRF370x Vcm S0338-01 Figure 50. Passive DAC-to-Modulator Interface Network Table 2. DAC-to-Modulator Interface Network Values Topology 1 Topology 2 With Vee = 0 V With Vee = –5 V DAC Vcm [V] 3.3 3.3 0.7 TRF370x Vcm [V] 1.7 1.7 1.7 Vdd [V] 5 5 5 Vee [V] Gnd –5 N/A R1 [Ω] 66 56 960 R2 [Ω] 100 80 290 R3 [Ω] 108 336 52 Insertion loss [dB] 5.8 1.9 2.3 22 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 TRF370417 www.ti.com SLWS213 – JANUARY 2010 DEFINITION OF SPECIFICATIONS Unadjusted Carrier Feedthrough This specification measures the amount by which the local oscillator component is suppressed in the output spectrum of the modulator. If the common mode voltage at each of the baseband inputs is exactly the same and there was no dc imbalance introduced by the modulator, the LO component would be naturally suppressed. DC offset imbalances in the device allow some of the LO component to feed through to the output. Because this phenomenon is independent of the RF output power and the injected LO input power, the parameter is expressed in absolute power, dBm. Adjusted (Optimized) Carrier Feedthrough This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the output spectrum. This is measured in dBm. Unadjusted Sideband Suppression This specification measures the amount by which the unwanted sideband of the input signal is suppressed in the output of the modulator, relative to the wanted sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectly matched, the unwanted sideband (or image) would be naturally suppressed. Amplitude and phase imbalance in the I and Q branches results in the increase of the unwanted sideband. This parameter is measured in dBc relative to the desired sideband. Adjusted (Optimized) Sideband Suppression This differs from the unadjusted sideband suppression in that the gain and phase of the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. This is measured in dBc. Suppressions Over Temperature This specification assumes that the user has gone though the optimization process for the suppression in question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when temperature conditions change after the initial calibration is done. Figure 51 shows a simulated output and illustrates the respective definitions of various terms used in this data sheet. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 23 TRF370417 2 U nw an te d Si de ba nd O rd er IM 3 rd O rd er D IM es ire d Si gn al www.ti.com nd SLWS213 – JANUARY 2010 = + B2 (f B B2 (f B )+ 1 f BB LO rd dH f 2n f1 – 2 2f = LO + H f 3rd 2 O f BB L + = f2 f BB1 – f2 LO = 1 f )+ f1 = 2 1 f BB – L = rd fnBBn = RF FrequencyBBn f 3rd dL f 2n LO 1 f BB – 2 LO f BB = – B1 LO LS 2 = B LS rd fBBnBBn= Baseband FrequencyBBn f rd rd rd rd f3rdH/L 3= 3BBnOrder Intermodulation Product Frequency (High Side/Low nd nd rd rd f2ndH/L 2 = 2BBnOrder Intermodulation Product (High Side/Low Side)BBn rd rd LOBBn = Local Oscillator FrequencyBBn rd rd = Lower Sideband FrequencyBBn LSBnBBn Side)BBn rd M0104-01 Figure 51. Graphical Illustration of Common Terms 24 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TRF370417 PACKAGE OPTION ADDENDUM www.ti.com 31-May-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) TRF370417IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Purchase Samples TRF370417IRGET ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Purchase Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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