N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306A ISSUE 3 – JULY 94 FEATURES * 60 Volt VDS * RDS(on)= 0.33Ω * Spice model available D G APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 60 UNIT V Continuous Drain Current at T amb =25°C ID 1.1 A Practical Continuous Drain Current at T amb =25°C I DP 1.3 A Pulsed Drain Current I DM 15 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot 850 mW Practical Power Dissipation at T amb =25°C* P totp Operating and Storage Temperature Range T j :T stg 1.13 W -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 1.3 Gate-Body Leakage TYP. MAX. UNIT CONDITIONS. V I D =1mA, V GS =0V 3 V ID=1mA, V DS = V GS I GSS 100 nA V GS =± 20V, V DS =0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS =60V, V GS =0 V DS =48V, V GS =0V, T=125°C (2) On-State Drain Current(1) I D(on) A V DS =10V, V GS =10V Static Drain-Source On-State Resistance (1) R DS(on) Ω Ω V GS =10V,I D =3A V GS =5V, I D =1.5A Forward Transconductance (1)(2) g fs mS V DS =25V,I D =3A 12 0.22 0.32 700 3-390 0.33 0.45 ZVN4306A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER MAX. UNIT Input Capacitance (2) Ciss SYMBOL MIN. TYP. 350 pF Common Source Output Capacitance (2) Coss 140 pF Reverse Transfer Capacitance (2) Crss 30 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 25 ns Turn-Off Delay Time (2)(3) td(off) 30 ns Fall Time (2)(3) tf 16 ns CONDITIONS. VDS=25 V, VGS=0V, f=1MHz VDD ≈ 25V, VGEN=10V, ID=3A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator THERMAL CHARACTERISTICS PARAMETER Thermal Resistance (°C/W) 1.0 0.75 Am tt en bi 0.50 em pe tu ra 0.25 re Max Power Dissipation - (Watts) Thermal Resistance:Junction to Ambient Junction to Case -40 -20 0 20 40 60 80 100 120 140 160 180 200 SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W D.C. 150 t1 100 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-391 ZVN4306A TYPICAL CHARACTERISTICS RDS(on)-Drain Source On Resistance (Ω) VGS= 20V 12V 10V 9V 8V 12 ID - Drain Current (Amps) 11 7V 10 9 8 7 6 5 6V 5V 4 3 2 1 4V 3.5V 3V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Drain Source Voltage (Volts) Saturation Characteristics 3.5V VGS=3V 5V 6V 10 1.0 8V 10V 0.1 0.1 1 100 10 ID-Drain Current (Amps) On-resistance v drain current 2.4 5 VGS=10V ID=3A 2.2 gfs-Transconductance (S) Normalised RDS(on) and VGS(th) 2.6 n) (o DS 2.0 1.8 1.6 1.4 ain Dr 1.2 Re ce ur So eR nc ta sis VGS=VDS ID=1mA 1.0 0.8 0.6 -50 -25 Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225 4 3 VDS=10V 2 1 0 0 2 Tj-Junction Temperature (°C) 8 10 12 14 300 Ciss Coss Crss 0 0 10 20 30 40 50 60 70 80 VGS-Gate Source Voltage (Volts) 400 100 18 20 VDD= 20V 40V 60V 16 500 200 16 Transconductance v drain current Normalised RDS(on) and VGS(th) v Temperature C-Capacitance (pF) 6 4 ID(on)- Drain Current (Amps) VDS-Drain Source Voltage (Volts) 14 ID=3A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-392