RoHS 55PT Series RoHS SEMICONDUCTOR Stansard SCRs, 55A 2 Main Features Symbol Value Unit I T(RMS) 55 A V DRM /V RRM 600 to 1600 V I GT 80 mA 1 2 1 3 TO-220AB (non-Insulated) (55PTxxA) 2 3 TO-220AB (lnsulated) (55PTxxAI) A2 DESCRIPTION The 55PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications, where power handling and power dissipation are critical, such as solid state relay, welding equipment and high power motor control. A1 A2 G A1 A2 G TO-3P (non-Insulated) (55PTxxB) Base on a clip assembly technology, they offer a superior performance in surge current capabilities. TO-3P (Insulated) (55PTxxBI) A2 Thanks to their internal ceramic pad, they provide high voltage insulation(2500V RMS ). A1 A2 1 G TO-263 (D2PAK) (55PTxxH) 2 2 (A2) 3 TO-247AB (non-Insulated) (55PTxxC) (G)3 1(A1) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing TEST CONDITIONS SYMBOL IT(RMS) IT(AV) ITSM VALUE UNIT 55 A TO-3P/TO-247AB T c =85°C TO-220AB/TO-263 T c =80°C TO-220AB insulated/TO-3P insulated T c =70°C TO-3P/TO-247AB T c =85°C TO-220AB/TO-263 T c =80°C TO-220AB insulated/TO-3P insulated T c =70°C F =50 Hz t = 20 ms 520 F =60 Hz t = 16.7 ms 540 I2t t p = 10 ms dI/dt F = 60 Hz Peak gate current IGM Maximum gate power 35 A A 1352 A2s T j = 125ºC 150 A/µs T p = 20 µs T j = 125ºC 5 A PGM T p =20µs T j = 125ºC 10 W Average gate power dissipation PG(AV) T j =125ºC 2 W Repetitive peak off-state voltage VDRM VRRM T j =125ºC 600 to 1600 V Repetitive peak reverse voltage Critical rate of rise of on-state current VD = 67% VDRM, tp = 200μs, IG = 0.3A dIG/dt = 0.3A/μs Storage temperature range Tstg - 40 to + 150 Tj - 40 to + 125 V RGM 5 ºC Operating junction temperature range Maximum peak reverse gate voltage www.nellsemi.com Page 1 of 5 V RoHS 55PT Series RoHS SEMICONDUCTOR ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL 55PT06xx 55PT10xx 55PT08xx 55PT12xx 30 40 TEST CONDITIONS IGT Max. 55PT16xx Unit 80 mA V D = 12V, R L = 33Ω VGT VGD T j = 125°C V D = V DRM , R L = 3.3KΩ, R GK = 220Ω Max. 1.5 V Min. 0.2 V IH I T = 500mA, Gate open Max. 80 100 120 mA IL I G = 1.2×I GT Max. 100 130 150 mA 700 1000 1000 V/µs V D = 67% V DRM , Gate open T j = 125°C Min. VTM I T = 80A, t P = 380µs T j = 25°C Max. 1.6 V IDRM IRRM V D =V DRM , V R =V RRM T j = 25°C Max. 10 µA R GK = 220Ω T j = 125°C Max. 6 mA Vto Threshold Voltage T j = 125°C Max. 1.02 V Rd Dynamic Resistance T j = 125°C Max. 85 mΩ dV/dt THERMAL RESISTANCE Rth(j-c) Junction to case (DC) D 2 PAK/TO-220AB/TO-3P/TO-247AB 0.8 TO-220AB insulated/TO-3P insulated 0.9 TO-263( D 2 PAK) 45 TO-220AB/TO-220AB insulated 60 TO-3P/TO-247AB/TO-3P insulated 50 UNIT °C/W S = 1 cm 2 Rth(j-a) VALUE Parameter SYMBOL Junction to ambient °C/W S=Copper surface under tab PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY PACKAGE V 80 mA TO-220AB V V 80 mA D 2 PAK V V V 80 mA TO-3P V V V 80 mA TO-247AB 600 V 800 V 1000 V 1200 V 1600 V 55PTxxA/55PTxxAl V V V V 55PTxxH V V V 55PTxxB/55PTxxBI V V 55PTxxC V V ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 55PTxxA 55PTxxA TO-220AB 2.0g 50 Tube 55PTxxAI 55PTxxAI TO-220AB (insulated) 2.3g 50 Tube 55PTxxH 55PTxxH TO-263(D 2 PAK) 2.0g 50 Tube 55PTxxB 55PTxxB TO-3P 4.3g 30 Tube 55PTxxBI 55PTxxBI TO-3P insulated 4.8g 30 Tube 55PTxxC 55PTxxC TO-247AB 5g 30 Tube Note: xx = voltage www.nellsemi.com Page 2 of 5 RoHS 55PT Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME 55 PT 06 Current 55 = 55A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V 16 = 1600V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) B = TO-3P (non-insulated) BI = TO-3P ( insulated) C = TO-247AB H = TO-263 (D 2 PAK) Fig.1 Maximum power dissipation versus average on-state current (half cycle) Fig.2 RMS on-state current versus case temperature (full cycle) IT(RMS) P(W) 80 60 55 70 TO-3P TO-247AB 50 45 60 40 50 TO-220AB insulated TO-3P insulated 35 30 40 TO-220AB TO-263 25 30 20 20 15 10 10 lT(AV)(A) 5 0 0 0 8 4 16 12 20 24 28 32 36 40 0 ITM (A) 550 Tj max. Vo = 1.02 V Rd = 85 mΩ 50 75 100 125 Fig.4 Surge peak on-state current versus number of cycles. Fig.3 On-state characteristics (maximum values). 100 25 ITSM (A) 500 450 t=10ms Half cycle Tj=Tj max 400 Non repetitive Tj initial=25°C 350 300 10 250 Tj=25°C 200 150 100 VTM(V) Number of cycles 50 1 0 0 0.5 www.nellsemi.com 1.0 1.5 2.0 1 2.5 Page 3 of 5 10 100 1000 RoHS 55PT Series RoHS SEMICONDUCTOR Fig.6 Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) Fig.5 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of l 2 t . ITSM (A), l2t (A2s) 3.0 10000 l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] Tj initial=25°C 2.5 dI/dt ≤ 150A/µs 2.0 I TSM I2t 1000 1.5 l GT 1.0 0.5 t=10ms Half cycle tp (ms) T j (°C) 100 0.01 l H &l L 0.0 0.1 1.0 10.0 -40 -20 0 20 40 60 80 100 120 Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) 0.56 (0.022) 0.36 (0.014) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 4 of 5 140 RoHS 55PT Series RoHS SEMICONDUCTOR Case Style TO-3P TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 1.40 (0.055) 1.14 (0.045) 6.22 (0.245) 1.40 (0.055) 1.19 (0.047) 9.14 (0.360) 8.13 (0.320) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 2.79 (0.110) 5.20 (0.205) 4.95 (0.195) TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) Anode 20.80 (0.819) 21.46 (0.845) 1 4.50 (0.177)Max 0.40 (0.016) 0.79 (0.031) RoHS 3.55 (0.138) 3.81 (0.150) 19.81 (0.780) 20.32 (0.800) 2 3 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 1.01 (0.040) 1.40 (0.055) (TYP.) 2.21 (0.087) 2.59 (0.102) 5.45 (0.215) 5.45 (0.215) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 5 of 5