www.fairchildsemi.com KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS) Features Description • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode .z C Applications • SMPS for VCR, SVR, STB, DVD & DVCD • SMPS for Printer, Facsimile & Scanner • Adaptor for Camcorder d a n i h .s C #3 VCC 32V (*#3 VCC) TO-220F-4L 8-DIP 1 1. GND 2. Drain 3. VCC 4. FB b B Internal Block Diagram m o 5V Vref Internal bias 1.6.7.8 Drain 2. GND 3. VCC 4. FB 5. NC #2 DRAIN SFET Good logic (*#1.6.7.8 DRAIN) OSC 9V 5µA S 1mA R − #4 FB 2.5R 1R (*#4 FB) 0.1V − + 27V L.E.B + + 7.5V Q − S R Thermal S/D Q Power on reset #1 GND (*#2 GND) OVER VOLTAGE S/D *Asterisk - KA5M0365RN, KA5L0365RN Rev.1.0.5 ©2002 Fairchild Semiconductor Corporation Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VD,MAX 650 V VDGR 650 V VGS ±30 V IDM 12.0 ADC ID 3.0 ADC KA5H0365R, KA5M0365R, KA5L0365R Maximum Drain Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation ID 2.4 ADC EAS 358 mJ VCC,MAX 30 V VFB -0.3 to VSD PD 75 Derating Operating Junction Temperature. TJ Operating Ambient Temperature. TA 0.6 .z C +160 -25 to +85 m o V W W/°C °C °C -55 to +150 °C 800 V 800 V ±30 V IDM 12.0 ADC ID 3.0 ADC ID 2.1 ADC EAS 95 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 75 W Derating 0.6 W/°C Operating Junction Temperature. TJ +160 °C Operating Ambient Temperature. TA -25 to +85 °C TSTG -55 to +150 °C Storage Temperature Range. TSTG d a KA5H0380R, KA5M0380R, KA5L0380R Maximum Drain Voltage VD,MAX Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed VGS h C (1) Continuous Drain Current (TC=25°C) s. Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) b B Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Storage Temperature Range. in VDGR Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C 2 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VD,MAX 650 V VDGR 650 V VGS ±30 V IDM 12.0 ADC ID 0.42 ADC KA5M0365RN, KA5L0365RN Maximum Drain Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (Ta=25°C) Continuous Drain Current (Ta=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation ID 0.28 ADC EAS 127 mJ VCC,MAX 30 V VFB -0.3 to VSD PD 1.56 Derating 0.0125 Operating Junction Temperature. TJ Operating Ambient Temperature. TA Storage Temperature Range. .z C +160 TSTG -25 to +85 -55 to +150 d a Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C m o V W W/°C °C °C °C n i h .s C b B 3 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V VDS=Max. Rating, VGS=0V - - 50 µA Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω gfs VDS=50V, ID=0.5A 2.0 - - S - 720 - VGS=0V, VDS=25V, f=1MHz - 40 - - 40 - - 150 - - 100 - - 150 - - 42 - - - 34 - 7.3 - - 13.3 - KA5H0365R, KA5M0365R, KA5L0365R Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time tr Turn Off Delay Time td(off) Fall Time tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd BVDSS Static Drain-Source on Resistance (Note) b B Forward Transconductance Input Capacitance Output Capacitance (Note) - - V - 250 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 1000 µA RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω gfs VDS=50V, ID=0.5A 1.5 2.5 - S - 779 - - 75.6 - - 24.9 - - 40 - - 95 - - 150 - - 60 - - - 34 - 7.2 - - 12.1 - Ciss Coss Crss Turn On Delay Time td(on) tr Turn Off Delay Time td(off) Fall Time nC - IDSS VGS=0V, ID=50µA nS 800 Reverse Transfer Capacitance Rise Time d a m o VDS=Max. Rating, VGS=0V .s C Zero Gate Voltage Drain Current .z C VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) n i h KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) pF tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) pF nS nC Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% 2. 1S = --R 4 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V VDS=Max. Rating, VGS=0V - - 50 µA Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω gfs VDS=50V, ID=0.5A 2.0 - - S - 314.9 - VGS=0V, VDS=25V, f=1MHz - 47 - - 9 - - 11.2 - - 34 - - 28.2 - - 32 - KA5M0365RN, KA5L0365RN Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn On Delay Time td(on) Rise Time tr Turn Off Delay Time td(off) Fall Time tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% 2. 1 S = ---R VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) .z C VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) d a n i h m o pF nS 11.93 - 1.95 - nC 6.85 .s C b B 5 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Electrical Characteristics (Control Part) (Continued) (Ta = 25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V Initial Accuracy FOSC KA5H0365R KA5H0380R 90 100 110 kHz Initial Accuracy FOSC KA5M0365R KA5M0365RN KA5M0380R 61 67 73 kHz Initial Accuracy FOSC KA5L0365R KA5L0365RN KA5L0380R 45 50 m o 55 kHz - ±5 ±10 % 62 67 72 % 72 77 82 % Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA Vfb>6.5V 6.9 7.5 8.1 V 4 5 6 µA 4.80 5.00 5.20 V - 0.3 0.6 mV/°C 1.89 2.15 2.41 A 25 27 29 V 140 160 - °C VCC=14V - 100 170 µA VCC<28 - 7 12 mA OSCILLATOR SECTION Frequency Change With Temperature (2) Maximum Duty Cycle Maximum Duty Cycle Dmax KA5H0365R KA5H0380R Dmax KA5M0365R KA5M0365RN KA5M0380R KA5L0365R KA5L0365RN KA5L0380R Feedback Source Current IFB .s C Shutdown Delay Current Output Voltage (1) Temperature Stability VSD Idelay REFERENCE SECTION b B (1)(2) .z C d a n i h FEEDBACK SECTION Shutdown Feedback Voltage -25°C≤Ta≤+85°C Vref Vref/∆T Ta=25°C, 5V≤Vfb≤VSD Ta=25°C -25°C≤Ta≤+85°C CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit IOVER Max. inductor current VOVP VCC>24V PROTECTION SECTION Over Voltage Protection Thermal Shutdown Temperature (Tj) (1) TSD - TOTAL STANDBY CURRENT SECTION Start-up Current Operating Supply Current (Control Part Only) ISTART IOP Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 6 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics(SenseFET part) (KA5H0365R, KA5M0365R, KA5L0365R) 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V ID, Drain Current [A] ID, Drain Current [A] Top : 1 @Notes: 1. 300µ s Pulse Test 2. TC = 25 oC 1 -25oC 25 oC 0.1 0.1 150 oC 1 10 2 4 .z C 7 Vgs=20V 3 2 .s C @ Note : Tj=25℃ 1 2 3 ID,Drain Current [A] 4 b B 600 Capacitance [pF] 500 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 300 200 Coss 1 150oC 0.1 25oC @Notes : 1. VGS= 0V 2. 300µ s PulseTest 0.01 5 Figure 3. On-Resistance vs. Drain Current 700 IDR, Reverse Drain Current [A] n i h 4 0.4 0.6 0.8 1.0 Figure 4. Source-Drain Diode Forward Voltage 10 VDS =130V VDS=320V 8 VDS=520V 6 4 2 100 @Note : ID=3.0A Crss 0 100 1.2 VSD, Source-Drain Voltage [V] VGS,Gate-Source Voltage[V] RDS(on) , [Ω ] Drain-Source On-Resistance Vgs=10V 0 10 d a 6 0 8 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 1 m o 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 5 @Notes: 1. VDS = 30V 2. 300 µ s Pulse Test 101 VDS, Drain-Source Voltage [V] Figure 5. Capacitance vs. Drain-Source Voltage 0 0 5 10 15 20 25 QG,Total Gate Charge [nC] Figure 6. Gate Charge vs. Gate-Source Voltage 7 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics (Continued) 2.5 1.2 RDS(on), (Normalized) 1.0 @ Notes : 1. VGS = 0V 0.9 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 2.0 1.1 1.5 1.0 @Notes: 1. VGS = 10V 2. ID = 1.5 A 0.5 2. ID = 250µ A 0.8 0.0 -50 0 50 100 -50 150 0 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage vs. Temperature .z C 3.0 10 µs 2.5 100 µs 1 ms 10 ms DC n i h @ Notes : 1. TC = 25 oC 10-1 2. TJ = 150 oC 3. Single Pulse 10-2 0 10 101 .s C 102 150 m o d a ID, Drain Current [A] ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 100 100 Figure 8. On-Resistance vs. Temperature 102 101 50 TJ, Junction Temperature [oC] o 103 VDS , Drain-Source Voltage [V] Figure 9. Max. Safe Operating Area b B 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TC, Case Temperature [oC] Figure 10. Max. Drain Current vs. Case Temperature D=0.5 0.2 @ Notes : 1. Zθ JC (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJM -TC =PDM *Zθ JC (t) 0.1 10-1 ZθJ C(t) , Thermal Response 100 0.05 0.02 0.01 10-2 -5 10 single pulse 10-4 10-3 10-2 10-1 t1 , Square Wave Pulse Duration 100 101 [sec] Figure 11. Thermal Response 8 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0380R, KA5M0380R, KA5L0380R) 101 VGS Top: 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V ID, Drain Current [A] ID, Drain Current [A] 101 100 100 150oC @Notes: 1. 300µ s Pulse Test 2. TC = 25oC 10-1 100 25oC 10-1 101 2 4 VDS, Drain-Source Voltage [V] Vgs=10V 5 IDR, Reverse Drain Current [A] RDS(on) , [Ω ] Drain-Source On-Resistance .z C 10 6 n i h Vgs=20V 3 2 0 .s C 1 1 2 3 4 0.1 0.4 @Notes: 1. VGS = 0V 2. 300µ s Pulse Test 0.6 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 900 800 700 600 Ciss 500 400 300 200 Coss 100 Crss 0 100 1.0 Figure 4. Source-Drain Diode Forward Voltage 10 VDS=160V VGS,Gate-Source Voltage[V] b B Figure 3. On-Resistance vs. Drain Current 0.8 VSD, Source-Drain Voltage [V] ID,Drain Current Capacitance [pF] 25oC 150oC @Note : Tj=25℃ 0 10 d a 7 1 m o 8 Figure 2. Thansfer Characteristics Fig3. On-Resistance vs. Drain Current 4 6 VGS, Gate-Source Voltage [V] Figure 1. Output Characteristics 8 @Notes: 1. VDS = 30 V 2. 300µ s PulseTest -25oC VDS=400V 8 VDS =640V 6 4 2 @Note : ID=3.0A 101 VDS, Drain-Source Voltage [V] Figure 5. Capacitance vs. Drain-Source Voltage 0 0 5 10 15 20 25 30 QG,Total Gate Charge [nC] Figure 6. Gate Charge vs. Gate-Source Voltage 9 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0380R, KA5M0380R, KA5L0380R) 2.5 2.0 RDS(on), (Normalized) 1.1 1.0 @ Notes : 1. VGS = 0V 0.9 2. ID = 250µA 0.8 -50 0 50 100 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.5 1.0 @ Notes: 1. VGS = 10V 0.5 2. ID = 1.5 A 0.0 150 -50 0 Figure 7. Breakdown Voltage vs. Temperature 2.5 1 ms 10 ms DC in @ Notes : 1. TC = 25 oC h C o 2. TJ = 150 C 3. Single Pulse -2 101 102 s. 103 2.0 1.5 1.0 0.5 0.0 40 Figure 9. Max. Safe Operating Area Thermal Response b B θ 60 80 100 120 140 TC, Case Temperature [oC] VDS , Drain-Source Voltage [V] Z J C(t) , 150 d a 10 µ s 100 µ s ID, Drain Current [A] ID , Drain Current [A] 3.0 101 10 .z C 3.5 Operation in This Area is Limited by R DS(on) 10-1 m o 100 Figure 8. On-Resistance vs. Temperature 102 100 50 TJ, Junction Temperature [oC] T J, Junction Temperature [oC] Figure 10. Max. Drain Current vs. Case Temperature 100 D=0.5 @ Notes : 1. Zθ J C (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) 0.2 0.1 10- 1 0.05 0.02 0.01 10- 2 - 5 10 single pulse 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 101 [sec] Figure 11. Thermal Response 10 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics(SenseFET part) (Continued) (KA5M0365RN, KA5L0365RN) 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 -1 10 150℃ -55℃ 0 10 25℃ ※ Note : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Note 1. VDS = 50V 2. 250μ s Pulse Test -1 0 10 1 10 10 2 4 Figure 1. Output Characteristics 7.5 .z C d a 7.0 RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 10V 6.0 10 in VGS = 20V 5.0 h C 4.5 4.0 3.5 IDR , Reverse Drain Current [A] 1 5.5 s. 2.5 0 1 2 3 4 b B 5 ID, Drain Current [A] 0 10 6 400 Coss ※ Note : 1. VGS = 0V 2. 250μ s Pulse Test Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 200 100 0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 4. Source-Drain Diode Forward Voltage 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 300 -1 25℃ VSD , Source-Drain Voltage [V] 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance vs. Drain-Source Voltage VGS, Gate-Source Voltage [V] Capacitances [pF] 500 Ciss 10 150℃ -1 10 7 Figure 3. On-Resistance vs. Drain Current 600 10 ※ Note : TJ = 25℃ 3.0 700 m o 8 Figure 2. Transfer Characteristics 8.0 6.5 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 10 VDS = 130V VDS = 325V 8 VDS = 520V 6 4 2 ※ Note : ID = 3.0 A 0 0 2 4 6 8 10 12 Q G, Total Gate Charge [nC] Figure 6. Gate Charge vs. Gate-Source Voltage 11 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics (Continued) ( KA5M0365RN, KA5L0365RN) 1.15 1.05 1.00 0.95 ※ Note : 1. VGS = 0 V 2. ID = 250 μ A 0.90 -50 0 50 100 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 2.5 1.10 2.0 1.5 1.0 ※ Note : 1. V GS = 10 V 2. ID = 1.5 A 0.5 150 -50 0 o -1 10 0.4 ID, Drain Current [A] 10 µs 100 µs 1 ms 10 ms 100 ms 1s 10 ID, Drain Current [A] .z C Operation in This Area is Limited by R DS(on) 0 150 d a 0.3 n i h 10 s DC -2 10 m o Figure 8. On-Resistance vs. Temperature 0.5 1 100 T J, Junction Temperature [ C] Figure 7. Breakdown Voltage vs. Temperature 10 50 o TJ, Junction Temperature [ C] 0.2 0.1 .s C -3 10 0 10 1 2 10 10 0.0 25 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [? ] b B Figure 10. Max. Drain Current vs. Case Temperature Figure 9. Max. Safe Operating Area Z? JC(t), Thermal Response D=0.5 0.2 10 0.1 0.05 0.02 1 0.01 ? Notes : 1. Z? JC(t) = 80 ? /W Max. 2. Duty Factor, D=t1/t2 3. TJM - T C = P DM * Z? JC(t) single pulse 0.1 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration [sec] Figure 11. Thermal Response 12 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics (Control Part) (Continued) (These characteristic graphs are normalized at Ta = 25°C) Fig.2 Feedback Source Current Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Fig.3 Operating Current 0.9 50 75 h C s. b B 1.1 Istart 0.9 0.7 in 100 125 150 Fig.5 Start up Current 1.3 0.5 -25 d a 0.95 Figure 3. Operating Supply Current 1.5 .z C 1.05 25 50 75 100 125 150 m o Fig.4 Max Inductor Current 1.1 IIpeak over 1 0 25 Figure 2. Feedback Source Current Figure 1. Operating Frequency 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 0 0.85 0.8 -25 0 25 50 75 100 125 150 Figure 4. Peak Current Limit Fig.6 Start Threshold Voltage 1.15 1.1 1.05 Vstart 1 0.95 0.9 0 25 50 75 100 125 150 Figure 5. Start up Current 0.85 -25 0 25 50 75 100 125 150 Figure 6. Start Threshold Voltage 13 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) Fig.7 Stop Threshold Voltage Fig.8 Maximum Duty Cycle 1.15 1.15 1.1 1.1 1.05 1.05 Vstop 1 Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 0.85 -25 100 125 150 Fig.9 Vcc Zener Voltage .z C 1.1 1.05 d a Vsd 1 0.95 25 50 75 in 100 125 150 Figure 9. VCC Zener Voltage h C s. b B 0 25 50 75 75 100 125 150 m o 0.9 0.85 -25 0 25 50 75 100 125 150 Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 50 Fig.10 Shutdown Feedback Voltage 1.15 0 25 Figure 8. Maximum Duty Cycle Figure 7. Stop Threshold Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 0 Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 100 125 150 Figure 11. Shutdown Delay Current 0.85 -25 0 25 50 75 100 125 150 Figure 12. Over Voltage Protection 14 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on Resistance 1.15 2.5 1.1 2 1.05 1 1.5 0.95 ( )1 Rdson 0.9 0.5 Vss 0.85 -25 0 25 50 75 100 125 0 -25 150 0 25 50 75 100 125 150 m o Figure 14. Static Drain-Source on Resistance Figure13. Soft Start Voltage .z C d a n i h .s C b B 15 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Package Dimensions TO-220F-4L .z C m o d a n i h .s C b B 16 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Package Dimensions (Continued) TO-220F-4L(Forming) .z C m o d a n i h .s C b B 17 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Package Dimensions (Continued) 8-DIP .z C m o d a n i h .s C b B 18 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES Ordering Information Product Number KA5H0365RTU KA5H0365RYDTU KA5M0365RTU KA5M0365RYDTU KA5L0365RTU KA5L0365RYDTU Package Marking Code BVDSS FOSC RDS(on) 5H0365R 650V 100kHz 3.6Ω 5M0365R 650V 67kHz 3.6Ω 5L0365R 650V 50kHz 3.6Ω TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6Ω KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6Ω Package Marking Code BVDSS FOSC RDS(on) 5H0380R 800V 100kHz 4.6Ω 5M0380R 800V 67kHz 4.6Ω 5L0380R 800V Product Number KA5H0380RTU KA5H0380RYDTU KA5M0380RTU KA5M0380RYDTU KA5L0380RTU KA5L0380RYDTU TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) .z C m o 50kHz 4.6Ω d a TU :Non Forming Type YDTU : Forming type n i h .s C b B 19 Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com KA5X03XX-SERIES .z C m o d a n i h .s C b B DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 12/12/02 0.0m 001 Stock#DSxxxxxxxx 2002 Fairchild Semiconductor Corporation Free Datasheet Download http://www.Chinadz.Com http://www.Icver.Com