Si7411DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11.4 0.025 @ VGS = −2.5 V −9.9 0.034 @ VGS = −1.8 V −8.5 D TrenchFETr Power MOSFET: 1.8-V Rated D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile APPLICATIONS D Load Switch PowerPAKr 1212-8 S S 3.30 mm 1 2 3.30 mm S 3 S 4 G G D 8 7 D 6 D 5 D D Bottom View P-Channel MOSFET Ordering Information: Si7411DN-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V −11.4 −7.5 −8.2 −5.4 IDM −30 −3 −1.3 3.6 1.5 1.9 0.8 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 28 35 65 81 2.9 3.8 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72399 S-40763—Rev. C, 19-Apr-04 www.vishay.com 1 Si7411DN Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −300 mA −0.4 Typ Max Unit −1.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 VDS v −5 V, VGS = −4.5 V mA −30 A VGS = −4.5 V, ID = −11.4 A 0.015 0.019 VGS = −2.5 V, ID = −9.9 A 0.020 0.025 VGS = −1.8 V, ID = −2.9 A 0.027 0.034 gfs VDS = −15 V, ID = −11.4 A 35 VSD IS = −3.0 A, VGS = 0 V −0.8 −1.2 27 41 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = −10 V, VGS = −4.5 V, ID = −11.4 A f = 1 MHz 5 td(on) Rise Time VDD = −10 10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr W 23 tr Turn-Off Delay Time nC 7 Rg Turn-On Delay Time 3.9 IF = −3.2 A, di/dt = 100 A/ms 35 45 70 135 200 70 105 29 50 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 25 20 20 I D − Drain Current (A) I D − Drain Current (A) VGS = 5 thru 2 V 25 15 1.5 V 10 5 10 TC = 125_C 5 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 25_C −55_C 1V 0 2 15 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 72399 S-40763—Rev. C, 19-Apr-04 Si7411DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 4000 3200 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.10 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V Ciss 2400 1600 800 0.02 Coss VGS = 4.5 V 0.00 Crss 0 0 5 10 15 20 25 30 0 4 Gate Charge 1.4 r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 16 20 On-Resistance vs. Junction Temperature 1.5 VDS = 10 V ID = 11.4 A 4 12 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 5 8 3 2 1 VGS = 4.5 V ID = 11.4 A 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 5 10 15 20 25 0.6 −50 30 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 50 TJ − Junction Temperature (_C) 60 TJ = 150_C 10 TJ = 25_C 1 0.0 25 0.08 ID = 11.4 A 0.06 ID = 2.9 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72399 S-40763—Rev. C, 19-Apr-04 1.2 1.4 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7411DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-to-Ambient 0.4 50 ID = 300 mA 40 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 30 20 0.0 10 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ − Temperature (_C) 10 100 600 Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited I D − Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 BVDSS Limited 0.01 0.1 P(t) = 10 dc TA = 25_C Single Pulse 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72399 S-40763—Rev. C, 19-Apr-04 Si7411DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72399 S-40763—Rev. C, 19-Apr-04 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 www.vishay.com 5