Si4473BDY Vishay Siliconix New Product P-Channel 14-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4473BDY—E3 (lLead Free) Si4473BDY-T1—E3 (Lead Free with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −14 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −13 −9.8 −9.9 −7.8 IDM −50 −2.3 −1.34 2.5 1.5 1.6 0.94 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 85 15 18 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72691 S-32676—Rev. A, 29-Dec-03 www.vishay.com 1 Si4473BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.6 Typ Max Unit −1.4 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "12 V Diode Forward Voltagea −1 VDS = −14 V, VGS = 0 V, TJ = 70_C −10 VDS = −5 V, VGS = −4.5 V rDS(on) DS( ) Forward Transconductancea VDS = −14 V, VGS = 0 V mA −30 A VGS = −4.5 V, ID = −13 A 0.009 0.011 VGS = −2.5 V, ID = −2.5 A 0.014 0.018 gfs VDS = −17 V, ID = −13 A 45 VSD IS = −2.3 A, VGS = 0 V −0.7 −1.1 53 80 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time VDS = −10 V, VGS = −4.5 V, ID = −13 A 11 22 f = 1 MHz 1.5 td(on) Rise Time tr Turn-Off Delay Time VDD = −15 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = −2.3 A, di/dt = 100 A/ms 2.7 4.5 55 85 95 145 140 210 140 210 81 120 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 5 thru 3 V 40 2.5 V I D − Drain Current (A) I D − Drain Current (A) 40 30 20 2V 10 30 20 TC = 125_C 10 25_C 1.5 V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 −55_C 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 72691 S-32676—Rev. A, 29-Dec-03 Si4473BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 6400 5600 0.04 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.05 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V Ciss 4800 4000 3200 2400 Coss 1600 0.01 Crss 800 0.00 0 0 10 20 30 40 0 50 2 4 ID − Drain Current (A) 8 10 12 14 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.4 VDS = 10 V ID = 13 A VGS = 4.5 V ID = 13 A 1.3 4 r DS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 6 3 2 1 1.2 1.1 1.0 0.9 0.8 0.7 0 0 10 20 30 40 50 0.6 −50 60 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.060 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 50 TJ − Junction Temperature (_C) 50 TJ = 150_C 10 TJ = 25_C 1 0.0 25 0.050 0.040 ID = 13 A 0.030 ID = 2.5 A 0.020 0.010 0.000 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72691 S-32676—Rev. A, 29-Dec-03 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4473BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.6 30 25 ID = 250 mA 20 0.2 Power (W) V GS(th) Variance (V) 0.4 0.0 15 10 −0.2 5 −0.4 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited P(t) = 0.001 I D − Drain Current (A) 10 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 P(t) = 10 dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72691 S-32676—Rev. A, 29-Dec-03 Si4473BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72691 S-32676—Rev. A, 29-Dec-03 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5