AAT9055 30V N-Channel Power MOSFET General Description Features The AAT9055 30 V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. • • • • Applications VDS(MAX) = 30V ID(MAX)1 = 12 A @ TC = 25°C IAPP(MAX) = 6A in typical computer application Low RDS(ON): • 56 mΩ @VGS = 10V • 90 mΩ @VGS = 4.5V DPAK Package DC-DC converters High current load switches LDO output Drain-Connected Tab G Absolute Maximum Ratings Symbol VDS VGS Description Value Drain-Source Voltage Gate-Source Voltage TC = 25°C TC = 70°C Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current 3 Continuous Source Current (Source-Drain Diode) 1 TC = 25°C Maximum Power Dissipation 1 TC = 70°C Operating Junction and Storage Temperature Range TJ, TSTG S (TC=25°C unless otherwise noted) ID PD Preliminary Information • • • PWMSwitch™ 1 Units 30 ±20 ±12 ±10 ±16 12 22 14 -55 to 150 °C Value Units 100 28 5.5 °C/W °C/W °C/W V A W Thermal Characteristics Symbol RθJA RTYP RθJC 9055.2003.04.0.61 Description Maximum Junction-to-Ambient Typical Junction to ambient on PC board Maximum Junction-to-Case 2 1 AAT9055 30V N-Channel Power MOSFET Electrical Characteristics Symbol (TJ=25°C unless otherwise noted) Description Conditions DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source ON-Resistance ID(ON) VGS(th) IGSS On-State Drain Current 3 Gate Threshold Voltage Gate-Body Leakage Current IDSS 3 Drain Source Leakage Current gfs Forward Transconductance 3 Dynamic Characteristics 4 QG Total Gate Charge QGT Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1 VGS=0V, ID=250µA VGS=10V, ID=12A VGS=4.5V, ID=10A VGS=10V, VDS=5V (Pulsed) VGS=VDS, ID=250µA VGS=±20V, VDS=0V VGS=0V,VDS=30V VGS=0V,VDS=30V, TJ=70°C VDS=5V, ID=4A VDS=15V, RD=2.5Ω, VGS=5V VDS=15V, RD=2.5Ω, VGS=10V VDS=15V, RD=2.5Ω, VGS=10V VDS=15V, RD=2.5Ω, VGS=10V VDD=15V, RD=2.5Ω, VGS=10V, VDD=15V, RD=2.5Ω, VGS=10V, VDD=15V, RD=2.5Ω, VGS=10V, VDD=15V, RD=2.5Ω, VGS=10V, 3 Min VGS=0, IS=12A Typ Max 30 V 44 68 56 90 16 1.0 ±100 1 25 6 RG=6Ω RG=6Ω RG=6Ω RG=6Ω Units A V nA µA S 4.2 7.7 1.35 1.2 2.5 2.6 12 5.7 1.2 mΩ nC ns 1.5 12 V A Notes: 1. Based on thermal dissipation from junction to case. RθJC + RθCA = RθJA where the case thermal reference is defined as the solder mounting surface of the drain tab. RθJC is guaranteed by design, however RθCA is determined by the PCB design. Package current is limited to 8A DC and 16A pulsed. 2. Mounted on typical computer main board. 3. Pulse measurement 300 µs. 4. Guaranteed by design. Not subject to production testing. 2 9055.2003.04.0.61 AAT9055 30V N-Channel Power MOSFET Typical Characteristics Transfer Characteristics Output Characteristics 16 10V VD =VG 4.5V 6V 12 4V 8 125°C 4 3V 0 0 0 1 25°C 8 3.5V 4 2 3 0 4 1 2 3 On-Resistance vs. Drain Current On-Resistance vs. Gate to Source Voltage 100 80 RDS(ON) (mΩ) 80 VGS = 4.5V 60 40 VGS = 10V I D = 10A 60 2V 40 20 20 0 0 0 4 8 12 0 16 2 4 Gate Charge 8 10 Source-Drain Diode Forward Voltage 100 VD =15V RD =2.5Ω 10 6 TJ = 150°C IS (A) V GS (V) 6 VGS (V) ID (A) 8 5 V GS (V) 100 10 4 V DS (V) 120 RDS(ON) (mΩ) -55°C 12 ID (A) IDS (A) 16 5V 4 TJ = 25°C 1 2 0 0 2 4 6 QG, Charge (nC) 9055.2003.04.0.61 8 10 0.1 0.4 0.6 0.8 1 1.2 1.4 V SD (V) 3 AAT9055 30V N-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel) TO-252 (DPAK) 9055 AAT9055INY-T1 Note: Sample stock is generally held on all part numbers listed in BOLD. Package Information TO-252 (DPAK) 1.145 0.50 2.29 BSC 7.5° ± 7.5° 2.285 ± 0.105 2.67 REF 0.83 ± 0.19 9.855 ± 0.555 5.775 ± 0.445 5.205 ± 0.255 1.46 ± 0.57 6.54 ± 0.19 0.58 ± 0.13 0.13 1.59 ± 0.19 0.72 ± 0.17 All measurements in millimeters. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 4 9055.2003.04.0.61