AMS AMS2304

AMS2304
DESCRIPTION
AMS2304 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
FEATURE
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate
2.Source
30V/3.2A, RDS(ON) = 50m-ohm (Typ.)
@VGS = 4.5V
20V/3.1A, RDS(ON) = 65m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3.Drain
PART MARKING
SOT-23-3L
3
04YA
2
1
Y: Year Code
A: Process Code
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS2304
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
ID
3.2
2.6
A
IDM
10
A
Continuous Source Current (Diode Conduction)
IS
1.25
A
TA=25℃
TA=70℃
PD
1.25
0.8
W
TJ
150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
100
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
Operation Junction Temperature
2
Advanced Monolithic Systems
http://www.ams-semitech.com
℃/W
AMS2304
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Symbol
Condition
Min
V(BR)DSS
VGS=0V,ID=250uA
30
VGS(th)
VDS=VGS,ID=250uA
1.0
Gate Leakage Current
IGSS
Zero Gate Voltage Drain
Current
IDSS
Parameter
Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V
3.0
V
VDS=0V,VGS=±20V
±100
nA
VDS=30V,VGS=1.0V
1
VDS=30V,VGS=0V
TJ=55℃
10
Drain-source On-Resistance
RDS(on)
VGS=10V,ID=3.2A
VGS=4.5V,ID=2.0A
Forward Transconductance
gfs
VDS=4.5V,ID=2.5V
4.6
Diode Forward Voltage
VSD
IS=1.25A,VGS=0V
0.82
1.2
4.5
10
0.050 0.058
0.065 0.075
uA
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
Turn-On Time
td(on)
Turn-Off Time
VDS=15V
VGS=10V
ID≡2.5A
VDS=15V
VGS=0V
F=1MHz
Crss
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
tr
td(off)
tf
3
Advanced Monolithic Systems
http://www.ams-semitech.com
0.8
nC
1.0
240
110
pF
17
8.0
20
12
30
17
35
8.0
20
nS
AMS2304
TYPICAL CHARACTERICTICS (25℃ Unless noted)
4
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS2304
TYPICAL CHARACTERICTICS (25℃ Unless noted)
5
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS2304
SOT-23-3L PACKAGE OUTLINE
6
Advanced Monolithic Systems
http://www.ams-semitech.com