AOSMD AO4802

Rev 2: Nov 2004
AO4802, AO4802L ( Green Product )
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4802 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. They
offer operation over a wide gate drive range from 1.8V
to 12V. The two devices may be used individually, in
parallel or to form a bidirectional blocking switch.
AO4802L ( Green Product ) is offered in a lead-free
package.
VDS (V) = 30V
ID = 7A
RDS(ON) < 26mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 40mΩ (VGS = 2.5V)
RDS(ON) < 70mΩ (VGS = 1.8V)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
D2
G2
S1
S2
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
V
ID
6
IDM
40
W
1.44
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
2
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
7
TA=70°C
TA=25°C
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
48
74
35
°C
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
AO4802, AO4802L
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, V DS=5V
30
TJ=55°C
5
nA
0.8
1
V
22
26
28
36
VGS=4.5V, I D=6A
25
30
mΩ
VGS=2.5V, I D=4A
34
40
mΩ
VGS=1.8V, I D=2A
52
70
mΩ
TJ=125°C
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
100
VGS=10V, I D=7A
Coss
V
1
IGSS
IS
Units
30
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
12
A
17
0.66
mΩ
S
1
V
3
A
767
pF
111
pF
82
pF
VGS=0V, VDS=0V, f=1MHz
1.3
Ω
10
nC
VGS=4.5V, V DS=15V, I D=7A
1.2
nC
VGS=0V, VDS=15V, f=1MHz
Qgd
Gate Drain Charge
3.1
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=6Ω
5.5
ns
39
ns
tf
Turn-Off Fall Time
4.7
ns
trr
Body Diode Reverse Recovery time
IF=5A, dI/dt=100A/µs
15
ns
Qrr
Body Diode Reverse Recovery charge
IF=5A, dI/dt=100A/µs
7.1
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4802, AO4802L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
10V
4.5V
20
VDS=5V
16
2.5V
12
ID(A)
ID (A)
15
2V
10
5
8
125°C
4
VGS=1.5V
25°C
0
0
0
1
2
3
4
5
0
0.5
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
70
Normalized On-Resistance
RDS(ON) (mΩ)
3
1.8
60
VGS=1.8V
50
40
VGS=2.5V
30
VGS=4.5V
20
VGS=10V
10
0
5
10
15
1.6
VGS=4.5V
VGS=10V
1.4
1.2
VGS=2.5V
VGS=1.8V
1
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
80
1.0E+00
70
ID=5A
60
50
40
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ)
1
125°C
30
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
20
1.0E-05
10
1.0E-06
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4802, AO4802L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=15V
ID=7A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
1000
Ciss
800
600
400
Coss
1
Crss
200
0
0
0
2
4
6
8
10
12
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
100.0
40
100µs
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
DC
1
0
0.001
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
20
10
10s
0.1
0.1
30
30
1ms
Power (W)
ID (Amps)
RDS(ON)
limited
25
TJ(Max)=150°C
TA=25°C
10µs
10.0
20
VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000