AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON5800 is Pbfree (meets ROHS & Sony 259 specifications). AON5800L is a Green Product ordering option. AON5800 and AON5800L are electrically identical. VDS (V) = 20V ID = 8 A (VGS = 10V) RDS(ON) < 16 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 21 mΩ (VGS = 4.0V) RDS(ON) < 22 mΩ (VGS = 3.1V) RDS(ON) < 27 mΩ (VGS = 2.5V) RDS(ON) < 45 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM S2 G2 D S1 G1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain ID Current RθJA=75°C/W TA=70°C Pulsed Drain Current C IDM TA=25°C Power Dissipation A RθJA=75°C/W TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Maximum 20 ±12 8 6.3 Units V A 45 1.6 1.0 -55 to 150 Typ 30 61 4.5 W °C Max 40 75 6 Units °C/W °C/W °C/W AON5800 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS BVGSO VGS(th) ID(ON) Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current Conditions Min ID=250μA, VGS=0V VDS=16V, VGS=0V gFS VSD IS VDS=0V, VGS=±10V VDS=0V, IG=±250uA VDS=VGS, ID=250μA VGS=10V, VDS=5V VGS=10V, ID=8A ±12 0.5 30 SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=8A VGS=5V, VDS=10V, RL=1.25Ω, RGEN=3Ω IF=8A, dI/dt=100A/μs IF=8A, dI/dt=100A/μs 0.5 Units V 1 5 10 TJ=55°C VGS=4.5V, ID=7A Static Drain-Source On-Resistance VGS=4.0V, ID=6A VGS=3.1V, ID=6A VGS=2.5V, ID=6A VGS=1.8V, ID=4.5A VDS=5V, ID=8A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max 20 TJ=125°C RDS(ON) Typ 0.73 1 13 18 16 17 18 22 35 28 0.74 16 22 20 21 22 27 45 1 2.5 μA μA V V A mΩ mΩ mΩ mΩ mΩ mΩ S V A 1330 182 161 1.5 pF pF pF Ω 13.1 2 3.9 6.2 11 40.5 10 nC nC nC ns ns ns ns 18.8 8.1 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 6: Dec. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AON5800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V 25 3V 15 4V 20 6V ID(A) ID (A) VDS=5V 2.5V 15 VGS=2V 10 125°C 0.5 10 1 5 5 25°C 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 50 1.8 30 Normalized On-Resistance VGS=1.8V 40 RDS(ON) (mΩ) 1 VGS=2.5V 20 VGS=4.5V 10 VGS=10V 0 0 5 10 15 1.6 VGS=4.5V ID=7A VGS=2.5V ID=4.5A 1.4 1.2 VGS=10V ID=8A VGS=1.8V ID=6A 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 50 1.0E+00 40 1.0E-01 30 IS (A) RDS(ON) (mΩ) ID=8A 125°C 125°C 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 10 1.0E-05 0 0.0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AON5800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2400 VDS=10V ID=8A 4 Ciss Capacitance (pF) VGS (Volts) 1800 3 2 1200 0.5 Coss 600 1 0 0 3 6 9 12 Crss 0 15 0 5 10 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 15 200 10μs RDS(ON) limited 160 Power (W) 10.0 ID (Amps) 100μs 1ms 10ms 100ms 1s 10s 1.0 DC TJ(Max)=150°C, TA=25°C 0.1 1 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJA RθJA=75°C/W 120 80 0 0.0001 0.001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 40 0.1 ZθJC Normalized Transient Thermal Resistance 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000